Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

Transient Photoluminescence From Silicon Wafers: Finite Element Analysis

Transient photoconductance and photoluminescence from thick silicon wafers and bricks: Analytical solutions

A Method to Separate Bulk Lifetime and Surface Recombination Velocity of Silicon Bricks based on Transient Photoluminescence

The Principle of Adaptive Excitation for Photoluminescence Imaging of Silicon: Theory

Coupled Optical and Electronic Simulations of Electrically Pumped Photonic-Crystal-Based Leds

Time-dependent Physical Response During Photorefractive Grating Formation at Large Modulation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Separation Algorithm for Bulk Lifetime and Surface Recombination Velocity of Thick Silicon Wafers and Bricks Via Time-Resolved Photoluminescence Decay

Numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses

Investigation of Carrier Migration from WS2 Monolayer to Substrate by Photoluminescence

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Ultrafast Laser-Induced Elastodynamics in Single Crystalline Silicon Part I: Model Formulation

Understanding Transient Photoluminescence in Halide Perovskite Layer Stacks and Solar Cells

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures

On the Role of the Pore Filling Medium in Photoluminescence from Photochemically Etched Porous Silicon

Finite Element Simulation for Short Pulse Light Radiative Transfer in Homogeneous and Nonhomogeneous Media

Diffusion Effect on the Decay of Time-Resolved Photoluminescence under Low Illumination in Lead Halide Perovskites

Time Dependent Modeling of Single Particle Displacement Damage in Silicon Devices

Dynamic and Photoluminescence Behavior of Nanocrystallites and Bulk Porous Silicon Texture

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON