Abstract:In this work, we show that extraction of the true bulk lifetime from the biexponential decay that follows from low initial carrier density photoluminescence decay experiments is not generally possible, and introduce new models to enable extraction of the bulk lifetime in the case where the initial carrier density exceeds the doping level. From measurements with high initial carrier density, we establish quasi-equilibrium between localized and free carrier states and accurately measure the bulk lifetime. Using our new models, we measure the time constants associated with localization processes as well as nonradiative and radiative bulk recombination in our GaAs double heterostructures grown with molecular beam epitaxy from experiments with varied excitation strength providing initial carrier densities that range from around 1014 to 1017 cm–3. We demonstrate that this approach can be applied to lightly doped (1016 cm–3) materials where the strongest excitation yields initial carrier densities that exceed the doping level. In our n-type sample, we report lifetime values of (22.7 ± 0.1) ns for bulk recombination, (73 ± 1) ns for trap-capture, (51 ± 2) ns for trap-emission, and (63 ± 2) ns for trap-decay, with a low-level injection effective radiative efficiency of (27.5 ± 0.7)%. In our p-type sample, we report lifetime values of (78.9 ± 0.3) ns for bulk recombination, (77.5 ± 0.7) ns for trap-capture, (530 ± 10) ns for trap-emission, and (177 ± 4) ns for trap-decay, with a low-level injection effective radiative efficiency of (47.0 ± 0.8)%. In comparison with the long and short lifetimes extracted from the biexponential decay with weak excitation, the mean bulk lifetime measured with strong excitation was (33 ± 2)% and (53 ± 1)% longer than the short lifetime, and (68 ± 4)% and (103 ± 3)% shorter than the long lifetime in our n-type and p-type samples, respectively. In our n-type sample, the extracted low-level injection nonradiative lifetime was (33 ± 1) ns, and it was observed to remain constant with the injection level. In our p-type sample, the high-level injection nonradiative lifetime was measured to be (30 ± 30)% larger than the low-level injection nonradiative lifetime of (140 ± 2) ns.

A Method to Separate Bulk Lifetime and Surface Recombination Velocity of Silicon Bricks based on Transient Photoluminescence

Separation Algorithm for Bulk Lifetime and Surface Recombination Velocity of Thick Silicon Wafers and Bricks Via Time-Resolved Photoluminescence Decay

Transient Photoluminescence From Silicon Wafers: Finite Element Analysis

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Transient photoconductance and photoluminescence from thick silicon wafers and bricks: Analytical solutions

Bulk Lifetime and Doping in Crystalline Silicon via Two-Photon Absorption Time-Resolved Photoluminescence Decay

The Principle of Adaptive Excitation for Photoluminescence Imaging of Silicon: Theory

Fast Separation of Front and Bulk Defects Via Photoluminescence on Silicon Solar Cells

Reappraising the Luminescence Lifetime Distributions in Silicon Nanocrystals

Imaging the Recombination Current Pre-Factor Jo of Heavily Doped Surface Regions; A Comparison of Low and High Injection Photoluminescence Techniques

A Light Spot Scanner Photo-Current Technique to Measure Surface Recombination Velocity of Semiconductor

Diffusion Effect on the Decay of Time-Resolved Photoluminescence under Low Illumination in Lead Halide Perovskites

Understanding Power‐Law Photoluminescence Decays and Bimolecular Recombination in Lead‐Halide Perovskites

Effects of Surface Plasmon on the Photoluminescence Emission Decay Time of Tb~(3+) Doped SiNx Films

Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 - Impact of front surface recombination and its temperature dependence

Temperature dependent radiative and non-radiative recombination lifetimes of luminescent amorphous silicon oxynitride systems

Understanding Transient Photoluminescence in Halide Perovskite Layer Stacks and Solar Cells

Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

Surface Recombination Property of Silicon Wafers Determined Accurately by Self-Normalized Photocarrier Radiometry

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Deriving mobility-lifetime products in halide perovskite films from spectrally- and time-resolved photoluminescence