Abstract:This work presents an experimental study of heavy-ion irradiation with different particle linear energy transfer (LET), gate biases, and drain biases. The results reveal that when the irradiation biases are low, the SiC MOSFET does not experience single event effect (SEE) and the electrical properties remain unchanged (the devices are in the safe operating area (SOA)). However, the oxide breakdown voltage of the device is significantly decreased due to the latent damage generated by the irradiation. The experimental results, along with TCAD simulations, suggest that the latent damage induced by the irradiation in the gate oxide is closely related to the peak electric field in the gate oxide at the time of particle incidence. This peak electric field is determined by the potential difference between the two sides of the gate oxide, which is affected by the particle LET, gate biases, and drain biases together. The high potential is determined by the combined effect of the LET and the drain-source voltage. The impact ionization of the particle by the applied electric field causes the accumulation of holes in the JFET oxide, which leads to a decrease in the doping of the N− epitaxial layer and eventually causes a rise in the high potential near the JFET oxide. The low potential is determined by the gate bias, and the negative bias applied to the gate can further increase the potential difference between the two sides of the oxide, causing an increase in the peak electric field in the gate oxide and aggravating the gate oxide damage.

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Modeling and Simulation of Ionizing Radiation Effect on Ferroelectric Field-Effect Transistor

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X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

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Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Investigation of Radiation Effect on Ge P-Channel Ferroelectric FET Memory

Impact of Heavy-Ion Irradiation on Gate Oxide Reliability of Silicon Carbide Power MOSFET

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions

High-energy X-Ray Radiation Effects on the Exfoliated Quasi-Two-dimensional Β-Ga2o3 Nanoflake Field-Effect Transistors

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations

Effect of Irradiation on MOS Transistor Induced by Focused Ion Beam

Investigation of Ionizing Radiation Mechanisms on HfO 2 -Based Ferroelectric Thin-Film Memories with Various Configurations

Analysis of Damage Induced by FIB Irradiation in Microprocess

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits