Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

A Comparative Study of Plasma-Enhanced Chemical Vapor Gate Dielectrics for Solution-Processed Polymer Thin-Film Transistor Circuit Integration

Study of Organic Thin-film Transistor on Silicon Nitride Gate Dielectrics for Integration in Display Circuits and Arrays

Organic Thin-Film Transistor Integration Using Silicon Nitride Gate Dielectric

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Polymer Electrolyte Blend Gate Dielectrics for High-Performance Ultrathin Organic Transistors: Toward Favorable Polymer Blend Miscibility and Reliability

High Mobility Solution-Processed N-Channel Organic Thin Film Transistors

Fabrication of RR-P3HT-based TFTs Using Low-Temperature PECVD Silicon Nitride Passivation

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Comparison of the Low-Temperature ( ≤ 600 °C) Polysilicon Thin-Film Transistors (tfts) with Two Kinds of Gate Dielectrics

Performance and Reliability of Low-Temperature Polysilicon TFT With a Novel Stack Gate Dielectric and Stack Optimization Using PECVD Nitrous Oxide Plasma

N2O-plasma Effect on Low-Temperature Deposited Gate Dielectric for Organic Thin-Film Transistors

Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Interfacial Molecular Screening of Polyimide Dielectric Towards High-Performance Organic Field-Effect Transistors

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

Polymer Thin Film Transistor Without Surface Pretreatment on Silicon Nitride Gate Dielectric

Low-Temperature-Deposited Sio2 Gate Insulator With Hydrophobic Methyl Groups For Bottom-Contact Organic Thin-Film Transistors