Abstract:We report the on the characterisation of 1.3-mu m emitting GaInNAs quantum well (QW) lasers grown by molecular beam epitaxy using a plasma nitrogen source. Through the optimization of the structural and optical properties as a function of substrate temperature and nitrogen flux conditions, we show that high optical quality structures, which exhibit good room temperature photoluminescence intensity and photoluminescence linewidths < 10meV at low temperature, can be routinely achieved. To obtain 1.3-mu m emission, we employed a structure containing quantum wells with an indium content of 40% and a nitrogen content of 2.5% which have low nitrogen content (1%) lattice matched quaternary GaInNAs barriers, the latter enabling us to grow thick barrier structures without introducing further strain. For unmounted and uncoated 15 mu m ridge waveguide lasers we have achieved threshold current densities as low as 377Acm(-2) for a 3 QW and record low value of 178Acm(-2) for a single QW device emitting above 13 10nm. The devices show excellent temperature characteristics with characteristic temperatures > 90 degrees C observed in several structures. In comparison to GaInAs quantum well lasers, the results show that at this composition (2.5%) there is no appreciable degradation of performance due to the presence of nitrogen in these samples. Increasing the nitrogen content by 1% was observed to shift the wavelength to 13 90m, but with a threshold current density increased by a factor of 2 to 830Acm(-2). The results also indicate that although high quality GaInNAs lasers can be achieved at wavelengths suitable for the 1.31 mu m optical fibre waveband, the performance of devices with higher N content, and therefore with emission at longer wavelength, are degraded.

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Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

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