Abstract:Ge and Ga-doped Ge thin films have been epitaxially grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). Structural studies revealed that the temperature of the substrate played an important role in controlling the Ga-incorporations as well as affecting the surface morphologies. Dot, dot-in-hole, and hole structures have been observed by changing the growth temperatures under, otherwise, the same MOCVD conditions for p-type Ge. These surface features are associated with segregation, migration, and coalescence of Ga-rich droplets on the growing surface, especially when Ga-doping is introduced. Mode softening of the longitudinal optical (LO) phonon of Ge has also been observed. This mode softening is dominated by the effect of free-carrier concentrations more than the effect of doping-induced crystal disordering and lattice strain. We have also observed atomic interdiffusions across the Ge/GaAs interface by employing spatially resolved Raman scattering and high-resolution X-ray diffraction (HRXRD), measuring from the cross-section of the Ge/GaAs heterostructure. Such atoms intermixing cause great challenges in controlling the doping concentrations in the Ge epilayer, they could also give rise to an intermediate layer in between the Ge epilayer and the GaAs substrate. Detailed morphological and structural properties of these Ge-on-GaAs heterostructures have been discussed in this paper, which could have important consequence when optimizing the Ge-on-GaAs growth by MOCVD.

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Growth and Characterization of GaAsN Bulk Layer and (in)gaasn Quantum-Well Structures

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Epitaxially Grown GaAsN Random Laser

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

MOCVD Ge-on-GaAs and Its P-Type Doping Via Incorporating Ga Atoms

Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

MOCVD GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As QUANTUM HETEROSTRUCTURES

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

The Effect of Low Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE Process

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Fast Growth of Gan Epilayers Via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition