High Thermal Conductivity in Pressureless Densified SiC Ceramics with Ultra-Low Contents of Additives Derived from Novel Boron–carbon Sources

Yinsheng Li,Jie Yin,Haibo Wu,Ping Lu,Yongjie Yan,Xuejian Liu,Zhengren Huang,Dongliang Jiang
DOI: https://doi.org/10.1016/j.jeurceramsoc.2014.02.024
IF: 5.7
2014-01-01
Journal of the European Ceramic Society
Abstract:In order to attain high thermal conductivity, SiC was doped with ultra-low amounts of B and C as sintering additives using boric acid together with d-fructose as boron–carbon sources. The contents of in situ generated B and C were both tailored as low as 0.4wt.%, which can significantly reduce the impurities induced phonon scattering effect. The SiC ceramics were pressureless densified at 2150°C for 1h, and some samples experienced subsequent annealing at 1950°C for 4h. High thermal conductivities of 180.94W/(mK) for the as-sintered SiC ceramics and 192.17W/(mK) for the annealed specimens at room temperature were achieved. The reasons for the high thermal conductivity in the polycrystalline SiC ceramics were specified, based on the close correlation with microstructure.
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