Abstract:<p>Band alignment of InGaN/GaN multiple quantum wells (MQW) light-emitting diode was investigated by regulating the widths of well and barrier. Novel structure of InGaN/GaN MQW was designed with wider well and narrower barrier with respect to conventional InGaN/GaN MQW with the layer thickness of 2.5/12.5 nm, respectively. The analyses of band alignment, and hole and electron concentrations within the MQW zone show that the novel MQW structure could improve hole transport and block electron leakage owing to the increased potential barrier for electron and the decreased potential barrier for hole in MQW zone, as can be confirmed by decreased electron density and increased hole density. Both the intensity of electroluminescence and internal quantum efficiency for novel MQW are enhanced by increasing radiative recombination. Moreover, it was found that non-radiative recombination current density mainly stems from Auger recombination current density that mainly depends on excess electron. The novel MQW structure reduces built-in field at well/barrier interface owing to increased hole injection. This work provides an effective approach for achieving high performance for InGaN/GaN LED by regulating band offset.</p>

Study of Well Width in Ingan/Gan Multiple Quantum Well Light-Emitting Diodes

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Characterization of Asymmetric Gan/Ingan Multiple Quantum Well

InGaN/GaN MQW High Brightness LED Grown by MOCVD

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Structural analysis of InxGa1-xN/GaN MQWs by different experimental methods

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Determination of Chemical Composition and Average Crystal Lattice Constants of Ingan/Gan Multiple Quantum Wells

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Enhancement Of Electron-Longitudinal Optical Phonon Coupling In Highly Strained Ingan/Gan Quantum Well Structures

Selective Epitaxy of Ingan/Gan Multiple Quantum Wells on Gan Side Facets

Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well