Abstract:The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 mu m node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It is found that the nitridation treatment not only enhances the control effect of gate voltage on channel carriers by passivation of the Si-NCs surface defects but also suppresses releasing of the stored carriers among the neighboring Si-NCs and leakage from Si-NCs to channel through the tunneling oxide by a silicon nitride cover layer acted as potential barrier. Consequently, the storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The surface-nitrided Si-NCs NVM devices show lower subthreshold swing value of 0.13V/decade, faster P/E speed characteristics of 1 mu s at +/- 7V, and good retention characteristics at room temperature. Furthermore, due to the improvement of the tunneling oxide quality by nitridation treatment, the stable memory window of 1.7V has been kept after 10(7) P/E cycles, showing superior endurance characteristics with the good retention characteristics. Our fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be employed in the 3-D NAND technology to further improve the device performance. (C) 2016 AIP Publishing LLC.

Vertical-Si-Nanowire-Based Nonvolatile Memory Devices With Improved Performance and Reduced Process Complexity

Junction-Less Stackable SONOS Memory Realized on Vertical-Si-Nanowire for 3-D Application

Vertical-Si-Nanowire SONOS Memory for Ultrahigh-Density Application

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Perspective of Flash Memory Realized on Vertical Si Nanowires.

Trap Layer Engineered Gate-All-Around Vertically Stacked Twin Si-Nanowire Nonvolatile Memory

Demonstration of memory string with stacked junction-less SONOS realized on vertical silicon nanowire

The Development of Nanometer Solid State Storage Memory

Performance Improvement of Nc-Si Nonvolatile Memory by Novel Design of Tunnel and Control Layer

Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory With 2-Bit Storage per Cell

Nanosheet-Compatible Complementary-Field Effect Transistor Logic Non-Volatile Memory Device

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

HYBRID NANOELECTROMECHANICAL SWITCH AND RESISTIVE MEMORY IN SILICON NANOWIRES BY VLSI NEMS

Performance and reliability feature of nanocrystal memory devices

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

Si Nanowire CMOS Transistors and Circuits by Top-Down Technology Approach

Improvement of retention and endurance characteristics of Si nanocrystal nonvolatile memory device

Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

The Role of Nitridation of Nc-Si Dots for Improving Performance of Nc-Si Nonvolatile Memory