Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory With 2-Bit Storage per Cell

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Narrow Channel MOSFET Memory Based on Silicon Nanocrystals and Charge Storage Characteristics

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

An 8-Level 3-Bit Cell Programming Technique in Nor-Type Nano-Scaled Sonos Memory Devices

The Development of Nanometer Solid State Storage Memory

Ge Quantum Dot Memory Realized with Vertical Si/SiGe Resonant Tunneling Structure

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

WSe 2 /WS 2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention

A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

A Compact Superconducting Nanowire Memory Element Operated by Nanowire Cryotrons

Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /H-Bn/graphene Heterostructure.

Multibit Programmable Optoelectronic Nanowire Memory with Sub‐femtojoule Optical Writing Energy

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling