Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

m h wong,uttam singisetti,jing lu,james s speck,u k mishra

DOI: https://doi.org/10.1109/TED.2012.2211599

IF: 3.1

2012-01-01

IEEE Transactions on Electron Devices

Abstract:An anomalous output conductance that resembled short-channel effects was observed in long-channel N-polar GaN-channel/AlGaN-back-barrier/GaN-buffer high electron mobility transistors. The phenomenon could not be reasonably explained by drain-induced barrier lowering, leakage currents, or impact ionization events. We propose that the output conductance was caused by the ionization of a donorlike ho...