Abstract:Epitaxial BaTiO3 thin films (∼300nm thick) with various conductive oxide bottom electrodes including (La0.5Sr0.5)CoO3, SrRuO3 and LaNiO3 were prepared on single-crystalline SrTiO3 substrates using a radiofrequency magnetron sputtering technique in an oxygen-rich atmosphere and at a deposition temperature of 700°C. The charge transport phenomena of these films were systematically investigated. Comparison of leakage current levels with respect to different BaTiO3–bottom electrode interfaces gave a direct proof of the p-type semiconducting behavior in the BaTiO3 films, whose I–V characteristics were well described by a modified Schottky contact model up to an applied field of ∼60MVm−1. By adapting this model, we obtained interface potential barriers, space-charge and free charge carrier densities, as well as depletion layer width and interface layer thickness for the epitaxial BaTiO3 films. The dominance of space-charges (∼1020cm−3) over intrinsic polarizations in these films well explained the apparent reduction in remnant polarization and tilting of the P–V hysteresis loops, as well as an enhanced dielectric strength. Further increase of the applied electric field will result in complete depletion of the BTO films. Consequently, charge transport in these films will become bulk-controlled. This prediction was validated by experimental J–V curves acquired for a broad range of applied electric field, where ionic conduction and Pool–Frenkel emission currents consecutively dominated in the high field (60–220MVm−1) and ultrahigh field (220–300MVm−1) regions. Finally, the potential of these lead-free heterostructures as high-energy density dielectric capacitors was demonstrated.

Charge Transport Behaviors in Epitaxial Bifeo3 Thick Films Sputtered with Different Ar/O-2 Flow Ratios

Microstructural and Electrical Characteristics of Epitaxial Bifeo3 Thick Films Sputtered at Different Ar/O-2 Flow Ratios

Magnetic And Electric Properties Of Fe3o4 Thin Films Sputtered On Metallic Underlayer

Space-charge dominated epitaxial BaTiO 3 heterostructures

Computer Simulation Of Ferroelectric Domain Structures In Epitaxial Bifeo3 Thin Films

Controllable Distribution and Reversible Migration of Charges in BiFeO3-Based Films on Si Substrates.

Magnetic-Electric Behaviors in Bifeo3 Films Grown on Lanio3-Buffered Si Substrate

Ferroelectric and piezoelectric characteristics of epitaxial BiFeO3 films sputtered on different oxide bottom electrodes

Manipulating the Ferroelectric Domain States and Structural Distortion in Epitaxial BiFeO 3 Ultrathin Films via Bi Nonstoichiometry.

Leakage Mechanisms in BiFeO3 Thin Films

Temperature Dependences of Ferroelectricity and Resistive Switching Behavior of Epitaxial Bifeo3 Thin Films

Impact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La<sub>0.9</sub>Hf<sub>0.1</sub>MnO<sub>3</sub>

Polar Dependent In-Plane Electric Transport Of Epitaxial Zno Thin Films On Srtio3 Substrates

Effect of Substrate and Intermediate Layer on the Conductivity and Charge Transport Properties of Epitaxial BaTiO3−δ Films

Structure evolution and energy band modulation in Ba-doped BiFeO3 thin films

Photocatalytic And Magnetic Behaviors Of Bifeo3 Thin Films Deposited On Different Substrates

Impedance spectroscopy of epitaxial multiferroic thin films

The transport properties in BiFeO 3 /YBCO heterostructures

Phase Conductance of BiFeO3 Film

Oxygen Transport Kinetics of Mixed Ionic-Electronic Conductors by Coupling Focused Ion Beam Tomography and Electrochemical Impedance Spectroscopy

Microstructure Defects Mediated Charge Transport in Nb-Doped Epitaxial Batio3 Thin Films