Fabrication Method Based On Marginal Reinforcing And Improved High-Voltage Contactless Conductivity Detector For Poly(Dimethylsiloxane)/Glass Microchips
ShuiFeng Zhang,Lishi Wang,Zuanguang Chen,Zhi Dang,Huiqing Chen,Xuerong Deng
DOI: https://doi.org/10.3321/j.issn:0253-3820.2006.10.034
IF: 1.193
2006-01-01
Chinese Journal of Analytical Chemistry
Abstract:A simple and new fabrication method based on marginal reinforcing for poly (dimethylsiloxane (PDMS)/glass microchips was introduced. Cut out the PI)MS replica in terms of the channel distributing in the manner of befittingly increasing the length of the out edge and reducing the vertical distance (l = 3 min was recommended) from the channel to the out edge. Stuck. the PDMS replica with the glass cover with some mixed glue of 10:1 PDMS prepolymer and curing agent a. long the cut edge of the PDMS slices, then a PDMS/glass microchip could be obtained solidified at 90 degrees C for about 40 minutes with a shearing strength of 20.4 N/cm(2) (tested with a piece of PDMS slice in the size of 7 mm x 7 mm x 1 mm). It was demonstrated that the electric character of the prepared microchip was very stable in the range of 0 - 3.5 kV. And a stable electroosmotic flow mobility of 2.9 10(-4)cm(2) / VS (phosphate, pH 4.6) was measured by current-monitoring method. An improved high-voltage contactless conductivity detector (HV-CCD) for this PDMS/glass microchip, which was composed of two parts: microchip electrode contact slices pedestal and fixed detectors on the channel of the microchip, was presented as well. And some special designs for shielding were described in detail and emphasized, which greatly helped to minimize the stray capacitances and enhance the sensitivity of this system. A primary result for separating three cations, K+, Na+, Li+ less than 30 s with, a excitation signal of 100 kHz, 100 V was shown, and the detection limits were 2.0 mu mol/L, 3.0 mu mol/L, 5.0 mu mol/L, respectively.