Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Comparative Study Of 1800v And 2400v Mct And Igbt

Comparative Study of 1800 V and 2400 V MCT and IGBT

Comparison of MCT and Clustered IGBT in High Power Applications

An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules

A comparative investigation of the MCST with MCT and IGBT

Switching characteristics of MCT's and IGBT's in power converters

Impact Of The Thermal-Interface-Material Thickness On Igbt Module Reliability In The Modular Multilevel Converter

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

Practical Analytical Model and Comprehensive Comparison of Power Loss Performance for Various MMCs Based on IGCT in HVDC Application

Comparison of High Power IGBT , IGCT and ETO for Pulse Applications

Study of Accelerated Power Cycling Test of IGBT Power Modules

The Advantages and Applications of IGBT Compared with Conventional BJT and MOSFET

Performance Compare and Test for Trenchstop and NPT IGBT

Simulation and Analysis of MCT Device Based on VLD Technology

Thermal Performances and Annual Damages Comparison of MMC Using Reverse Conducting IGBT and Conventional IGBT Module

Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMCHVdc Application Considering Bidirectional Power Transfer

Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

Reliability and Lifetime Analysis Considering IGBT Thermal Resistance Performance Degradation based on Hydropower Mission Profile of MMC

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions