Abstract:Resistive random-access memory (RRAM) is a candidate next generation nonvolatile memory due to its high access speed, high density and ease of fabrication. Especially, cross-point-access allows cross-bar arrays that lead to high-density cells in a two-dimensional planar structure. Use of such designs could be compatible with the aggressive scaling down of memory devices, but existing methods such as optical or e-beam lithographic approaches are too complicated. One-dimensional inorganic nanowires (i-NWs) are regarded as ideal components of nanoelectronics to circumvent the limitations of conventional lithographic approaches. However, post-growth alignment of these i-NWs precisely on a large area with individual control is still a difficult challenge. Here, we report a simple, inexpensive, and rapid method to fabricate two-dimensional arrays of perpendicularly-aligned, individually-conductive Cu-NWs with a nanometer-scale CuxO layer sandwiched at each cross point, by using an inorganic-nanowire-digital-alignment technique (INDAT) and a one-step reduction process. In this approach, the oxide layer is self-formed and patterned, so conventional deposition and lithography are not necessary. INDAT eliminates the difficulties of alignment and scalable fabrication that are encountered when using currently-available techniques that use inorganic nanowires. This simple process facilitates fabrication of cross-point nonvolatile memristor arrays. Fabricated arrays had reproducible resistive switching behavior, high on/off current ratio (Ion/Ioff) ~10 6 and extensive cycling endurance. This is the first report of memristors with the resistive switching oxide layer self-formed, self-patterned and self-positioned; we envision that the new features of the technique will provide great opportunities for future nano-electronic circuits.

Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process.

Fabrication of Cross-Shaped Cu-nanowire Resistive Memory Devices Using a Rapid, Scalable, and Designable Inorganic-Nanowire-digital-alignment Technique (conference Presentation)

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Cnt Based Mechanical Devices for Ulsi Memory

Nanofiber Architecture Engineering Implemented by Electrophoretic-Induced Self-Assembly Deposition Technology for Flash-Type Memristors

Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension

Vertical‐organic‐nanocrystal‐arrays for Crossbar Memristors with Tuning Switching Dynamics Toward Neuromorphic Computing

Multi-Level Programming Of Memristor In Nanocrossbar

Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

Solution-processable zinc oxide nanorods and a reduced graphene oxide hybrid nanostructure for highly flexible and stable memristor

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation

Alloying conducting channels for reliable neuromorphic computing

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Fast and Reconfigurable Logic Synthesis in Memristor Crossbar Array

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

Device engineering and CMOS integration of nanoscale memristors

Nanoristors: Highly Uniform, Sub-500-Millivolt, Large-Scale, and Robust Molybdenum Disulfide Nanograined Memristors

A Low Power Memristor Based on 2H-Mote2 Nanosheets with Synaptic Plasticity and Arithmetic Functions