Multi-Level Programming Of Memristor In Nanocrossbar

Xuan Zhu,Chunqing Wu,Yuhua Tang,Junjie Wu,Xun Yi
DOI: https://doi.org/10.1587/elex.10.20130013
2013-01-01
IEICE Electronics Express
Abstract:Utilizing memristor to obtain multi-level memory in nano-crossbar is a promising approach to enhance the memory density. In this paper, we proposed a solution for multi-level programming of memristor in nanocrossbar, which can be implemented on nanocrossbar without the need for extra selective devices. Meanwhile, using a general device model, this solution is demonstrated to be adaptive to a wide range of memristors that have been experimentally fabricated through HSPICE simulation.
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