Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Design considerations for variation tolerant multilevel CMOS/Nano memristor memory.

Reliable Memristor-based Neuromorphic Design Using Variation- and Defect-Aware Training

Passive LiNbO₃ Memristor With Multilevel States for Neuromorphic Computing

Recent progress in low-voltage memristor for neuromorphic computing

Memristors for Memory and Computing Applications

Memristor Neural Network Design

Thousands of conductance levels in memristors monolithically integrated on CMOS

Device engineering and CMOS integration of nanoscale memristors

Antiferromagnetic multi-level memristor using linear magnetoelectricity

Progress on Memristor-Based Analog Logic Operation

Design of materials properties and device performance in memristive systems

Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

The Future of Memristors: Materials Engineering and Neural Networks

Design Considerations of Multi-Level 1S1R Cell for In-Memory Computing

A Balanced CMOS Compatible Ternary Memristor-NMOS Logic Family and Its Application

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

A Closed-Loop Design to Enhance Weight Stability of Memristor Based Neural Network Chips