Abstract:Topological insulators have a bulk band gap like an ordinary insulator and conducting states on their edge or surface which are formed by spin-orbit coupling and protected by time-reversal symmetry. We report theoretical analyses of the electronic properties of three-dimensional topological insulator Bi2Se3 film on different energies. We choose five different energies (−123, −75, 0, 180, 350 meV) around the Dirac cone (−113 meV). When energy is close to the Dirac cone, the properties of wave function match the topological insulator’s hallmark perfectly. When energy is far way from the Dirac cone, the hallmark of topological insulator is broken and the helical states disappear. The electronic properties of helical states are dug out from the calculation results. The spin-momentum locking of the helical states are confirmed. A 3-fold symmetry of the helical states in Brillouin zone is also revealed. The penetration depth of the helical states is two quintuple layers which can be identified from layer projection. The charge contribution on each quintuple layer depends on the energy, and has completely different behavior along K and M direction in Brillouin zone. From orbital projection, we can find that the maximum charge contribution of the helical states is pz orbit and the charge contribution on py and px orbits have 2-fold symmetry.

Tuning Dirac states by strain in the topological insulator Bi 2 Se 3

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Topological Surface States and Dirac Point Tuning in Ternary Topological Insulators

Strain Tuning Of Topological Band Order In Cubic Semiconductors

Tuning Surface Dirac Valleys by Strain in Topological Crystalline Insulators

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Realization of Tunable Dirac Cone and Insulating Bulk States in Topological Insulators (Bi1−xsbx)2te3

Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi2Se3.

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Pressure Induced Topological Phase Transition in Layered Bi2S3

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Tunable Dirac Fermion Dynamics in Topological Insulators

A computational investigation of topological insulator Bi2Se3 film

Topological Dirac Surface States in Ternary Compounds GeBi 2 Te 4 ,snbi 2 Te 4 and Sn 0.571 Bi 2.286 Se 4

Topological Dirac surface states in ternary compounds GeBi<sub>2</sub>Te<sub>4</sub>, SnBi<sub>2</sub>Te<sub>4</sub> and Sn<sub>0.571</sub>Bi<sub>2.286</sub>Se<sub>4</sub> *

Engineering a Topological Phase Transition in Β-Inse Via Strain

Intrinsic and extrinsic perturbations on the topological insulator Bi2Se3 surface states

Tuning multiple Landau Quantization in Transition-Metal Dichalcogenide with Strain