Abstract:This study demonstrates a synergistic approach of dual nanostructure engineering to improve the performance of AlOx‐based resistive random access memory (RRAM) devices. More precisely, a novel material stack engineering of RRAM with nonlinear area scalable low current switching and extensive improvement of reliability and variability issues is reported. Dual nanostructures (nanodome bottom electrode and nanocrystals in switching layer) in RRAM is an effective way to change the switching from filamentary to a nonfilamentary one, resulting in forming‐free highly stable device. Several methods such as transmission electron microscopy, energy dispersive spectroscopy, and atomic force microscopy have been employed to investigate the morphology of the RRAM devices. Enhanced electric field within the enclave of switching layer is controlling the intrinsic distribution of oxygen vacancy profile with extrinsic operation. As compare to filamentary RRAM, nonfilamentary devices can effectively control dc switching for >103 cycles, ac switching for >106 cycles without any severe fluctuation of resistance states for different levels. Area and temperature‐dependent semiconducting behavior along with time‐dependent high resistance states are certainly confirming the nonfilamentary switching process. In addition, the device yield improvement ≈98% using nonfilamentary switching, is making dual nanostructure devices a very promising candidate for high‐density memory application, is highlighted.

Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory.

Retracted Article: High Uniformity and Improved Nonlinearity by Embedding Nanocrystals in Selector-Less Resistive Random Access Memory

Crystal That Remembers: Several Ways to Utilize Nanocrystals in Resistive Switching Memory

Performance and reliability feature of nanocrystal memory devices

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Cnt Based Mechanical Devices for Ulsi Memory

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Advances in Nanocrystal Nonvolatile Memory

Impact of Metal Nanocrystal Size and Distribution on Resistive Switching Parameters of Oxide-Based Resistive Random Access Memories

The co-improvement of selectivity and uniformity on NbOx-based selector by Al-doping

Nonvolatile Memory Devices With High Density Ruthenium Nanocrystals

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Self-Rectifying Effect In Gold Nanocrystal-Embedded Zirconium Oxide Resistive Memory

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Retraction: Effect of Ca 2+ doping on the upconversion luminescence properties of NaYF 4 :Yb 3+ /Tm 3+ nanoparticles and study of its temperature measurement performance

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications