Research Progress of High-Resolution Direct Laser Writing Lithography Based on Phase Change Thin Film (Invited)
Jialong Guo,Tao Wei,Jingsong Wei,Jing Hu,Miao Cheng,Qianqian Liu,Ruirui Wang,Wanfei Li,Bo Liu
DOI: https://doi.org/10.3788/cjl240577
2024-01-01
Chinese Journal of Lasers
Abstract:Significance Nanolithography is widely applied in the manufacturing of microelectronics and optoelectronic devices. Because of its high mask cost, nanolithography based on mask exposure is more suitable for large-scale integrated circuit manufacturing. To satisfy the requirements of low-cost and high-resolution device fabrication, developing high-resolution maskless lithography is necessary. Maskless lithography includes electron/focused ion beam direct writing, scanning probe lithography, and direct laser writing, which provides flexible technical means for personalized device manufacturing. Due to its high speed, low cost, and lack of mask assistance, direct laser writing can fabricate large-area micro/nanostructures and has potential applications in fields such as optical imaging and microelectromechanical systems. However, due to the optical diffraction limit, obtaining resolutions that reach the nanoscale level for direct laser writing is difficult. In general, methods to improve resolution include shortening the laser wavelength and enlarging the numerical aperture of the lens. However, a constant reduction in laser wavelength and an increase in the numerical aperture increase both the costs of equipment and process. Researchers have proposed various methods for achieving low-cost and high-resolution direct laser writing. Among others, phase-change thin films may provide a new solution because of their obvious thermal threshold effect, wide range of spectral responses, and simple preparation process. The past few decades have witnessed great advances in high-resolution direct laser writing of phase-change thin films. However,challenges remain in terms of lithography performance improvement and process stability. Therefore, reviewing the existing research to guide future developments in this field more rationally is necessary. Progress The principle of high-resolution direct laser writing lithography based on phase-change thin films is introduced (Fig.1), and the corresponding lithographic characteristics are summarized, including lower line edge roughness and higher resolution, multiscale lithography, wide spectral lithography, and the conversion of positive/negative lithography. Phase-change thin films are classified as SbTe-based, GeSbTe-based, and other types. Wei et al. fabricated nanostructures on AgInSbTe thin films with a minimum feature size of 46 nm via high-speed movement, which restrained thermal diffusion. They further utilized both thermal threshold and thermal diffusion effects to achieve multiscale structural fabrication on AgInSbTe thin films with feature sizes ranging from 90 nm to 2.7 mu m (Fig.2). The environmentally-friendly FeCl3 solution is also adopted to perform electrochemical development, and an etching selectivity ratio of similar to 30:1 is realized with a minimum feature size reaching 41 nm (Fig.3). X-ray grating patterns with a line spacing of 80 nm can be further transferred to a silica substrate, demonstrating their potential applications in diffraction optical elements (Fig.15). In addition, a N-doped Sb2Te resist with a simple chemical composition can achieve conversion from negative to positive lithography by increasing the N concentration (Fig. 5) with the highest resolution of 50 nm (Fig.6). Due to wet development-induced structural collapse, Ag-doped Sb4Te thin films are developed to perform high-resolution dry lithography. The developing selectivity ratio of the exposed to as-deposited region reaches 17, obtaining arbitrary patterns with a minimum feature size of 80 nm (Fig.7). The designed AgSb4Te and NSb2Te resists are shown to be capable of acting as functional layers to implement tunable perfect absorbers. Ge2Sb2Te5 thin films are also promising high-resolution resists. However, their etching selectivity is relatively low. Xi et al. designed a Bi-doped Ge2Sb2Te5 resist, where the etching selectivity reaches 22 using an alternating developing method. In addition, conversion from a positive to a negative resist is realized by substituting the developer KOH-H2O2 with HNO3-H2O2. Lewis and resonance structures are further proposed to elucidate the origins of positive and negative resists (Fig.8). The patterns on Ge2Sb1.8Bi0.2Te5 thin films are successfully transferred to Si and GaAs substrates with a Si etching selectivity that reached 524 (Fig.9). An Ag-doped Ge2Sb2Te5 thin film is also proposed as a promising negative resist for dry lithography, which is shown to possess superior etching selectivity and sidewall steepness (Fig.10). To simplify the chemical composition of the resist, TeOx thin films are developed with the highest resolution of 11 nm and the lithographic mechanism is elucidated (Fig.11). The GeTe thin film is designed as both a positive and negative resist using tetramethyl ammoniumhydroxid pentahydrate (TMAH) or HNO3 as the developer. The minimum feature size is 98 nm. Qin et al. fabricate 5 nm nanogap electrodes based on the thermal oxidation of Ti thin films and the high etching selectivity between Ti and TiO2 components in an HF/H2O2 developer (Fig.13), which shows potential applications in nanosensing devices. To effectively avoid Te segregation in phase-change films, researchers develop BiSb and GeSb thin films as high-resolution resists in which the chemical composition is simpler and more environmentally friendly. In the direct laser writing exposure of phase-change thin films, a controllable photothermal effect is necessary. The thermal-field distribution in the exposed area directly affects the feature size. Thus, researchers systematically investigate the thermal field characteristics and optimization strategies for thermal diffusion in direct laser writing. It is found that the selection of phase-change materials with lower thermal conductivity along with a reduction in film thickness, the addition of a thermal conductivity layer, a shortening of the laser irradiation time, and an increased writing speed could effectively reduce the feature size, thereby achieving high-resolution direct laser writing nanolithography. Conclusions and Prospects Phase-change thin films can overcome the optical diffraction limit and can enable the implementation of high-resolution direct laser writing nanolithography. However, the following problems must still be addressed before implementation in practical applications. 1) AgInSbTe- and Ge2Sb2Te5-based phase-change materials have complex chemical compositions, and Te segregation is severe. Investigating phase-change materials that have a simpler composition and preparation process is a future research direction. Sb-based materials such as BiSb and GeSb show excellent lithographic features. However, the interaction mechanism between Sb-based thin films and lasers as well as the mechanism of developing selectivity must be further clarified. 2) Compared with magnetron sputtering, the spin-coating process is simple and does not require a high-vacuum sputtering system. The film composition is easy to control and the film can be coated on a large substrate at low cost. Therefore, a spin-coating method for phase-change thin films with low roughness and high uniformity should also be investigated in the future. 3) The exposure depth is influenced by the absorption coefficient and thermal conductivity of films. Thus, achieving a high aspect ratio and good sidewall steepness is difficult. In the future, designing phase-change materials with low absorptivities and thermal conductivities, improving the exposure depth, and obtaining a lithographic morphology with a high aspect ratio and good sidewall steepness are all necessary. For example, Sb2S3 thin films should be investigated as high-resolution resists due to their large bandgaps and low absorptivities. 4) The thermal effects of phase-change films are difficult to control. For example, the composition uniformity and consistency of resists can affect the thermal conductivity and absorption coefficient and further influence the uniformity and consistency of the thermal distribution. Small fluctuations in the laser power, pulse width, and spot size may cause obvious changes in the thermal field in the film thickness and radial direction, leading to a nonuniform feature size. The stability of the environmental temperature also changes the thermal distribution of the exposed region, and controlling the feature size and uniformity in lithography is difficult. Improvements in materials, equipment, and processes are all required.