Abstract:Ferroelectric nano films exhibit distinctive properties that are influenced by aspects such as the epitaxial strain, film thickness, and electric-field frequency. In this work, we studied the effects of the above factors on the ferroelectric behavior of BaTiO3 nano films with a phase-field model based on the time-dependent Ginzburg-Landau kinetic equation. For the study of the epitaxial strain, we considered the cases with either compressive or tensile strain, ranging from -3.2% to 1%. Our results showed that the compressive epitaxial strain can generally enhance the remnant polarization and the coercive field, as opposed to the effect of the tensile one. As the film thickness reduces from 100 to 5 nm, the remnant polarization and the coercive field tend to increase, whereas the dielectric constant and the piezoelectric constant tend to decrease. We further investigated the effect of the high-strength electric-field frequency that varies from 0.1 to 100 kHz under two epitaxial-strain values, i.e., -0.1% and -1.74%, respectively. It was found that, at low frequencies, the coercive field increases sharply and the remnant polarization increases slightly with the rise of the applied frequency. Once the frequency gets higher than 20 kHz, the remnant polarization drastically reduces with the increasing frequency. In the meanwhile, the hysteresis loop exhibits an elliptic shape and the sharp tails of the butterfly loop are diminishing. We noticed that the frequency dependency is more sensitive to the epitaxial strain within the low-frequency range. Based on the obtained microstructural evolution process, we found that the 180 degrees polarization reversal is more likely to occur under low-frequency field, while the polarization cannot be fully reversed in high-frequency hysteresis. (C) 2018 Elsevier Ltd. All rights reserved.

Properties of Epitaxial Films Made of Relaxor Ferroelectrics.

Strain Tunable Ferroelectric and Dielectric Properties of BaZrO3

Effects of Nonequally Biaxial Misfit Strains on the Phase Diagram and Dielectric Properties of Epitaxial Ferroelectric Thin Films

Strain Tunability of Dielectric and Ferroelectric Properties in Epitaxial Lead Titanate Thin Films

Ferroelectric-Relaxor Behavior of Highly Epitaxial Barium Zirconium Titanate Thin Films

Effect of Crystal Orientation on the Phase Diagrams, Dielectric and Piezoelectric Properties of Epitaxial BaTiO3 Thin Films

Strain-temperature Phase Diagram of BaZrO3 with Antiferrodistortive Distortions

HIGH EPITAXIAL FERROELECTRIC RELAXOR Mn-DOPED Ba(Zr,Ti)O3 THIN FILMS ON MgO SUBSTRATES

Effects of Epitaxial Strain, Film Thickness and Electric-Field Frequency on the Ferroelectric Behavior of BaTiO3 Nano Films

Revisiting Properties of Ferroelectric and Multiferroic Thin Films under Tensile Strain from First Principles.

Influence of the Strain on Dielectric and Ferroelectric Properties of 0.5Bazr0.2ti0.8o3–0.5ba0.7ca0.3tio3

In-plane Dielectric Properties of Epitaxial 0.65pb(mg1∕3nb2∕3)o3−0.35pbtio3 Thin Films in a Very Wide Frequency Range

Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

The Effects of Strain Relaxation on the Dielectric Properties of Epitaxial Ferroelectric Pb(Zr0.2ti0.8)Tio3 Thin Films

The structure and dielectrics of epitaxially strained BaRO 3(R=Ti, Zr) thin films

Finite-Temperature Properties of Ba(Zr,Ti)O$_3$ Relaxors From First Principles

Structure and dielectric characteristics of epitaxially strained BaTiO 3 thin films

A Highly Strained Phase in PbZr0.2Ti0.8O3 Films with Enhanced Ferroelectric Properties

Structure And Dielectric Characteristics Of Epitaxially Strained Bazro3 Thin Films

Misfit Strain-Temperature Phase Diagram of Multi-Domain Structures in (111)-Oriented Ferroelectric PbTiO3 Films

A Highly Strained Phase in PbZr 0.2 Ti 0.8 O 3 Films with Enhanced Ferroelectric Properties