Structure And Dielectric Characteristics Of Epitaxially Strained Bazro3 Thin Films

Tang Jin-Long,Zhu Jun,Qin Wen-Feng,Xiong Jie,Li Yan-Rong

DOI: https://doi.org/10.1007/s11771-007-0336-1

2007-01-01

Journal of Central South University of Technology

Abstract:First-principles density functional studies of the structures and dynamical properties of the strained BaZrO3 thin films were presented. The linear response within density functional perturbation theory was employed, as implemented in the CASTEP code, to investigate the Born effective charges, soft phonon modes and static dielectric permittivity of strained epitaxially BaZrO3 thin films. The results show that BaZrO3 thin film can be grown more easily on the substrate under tensile misfit strains than that tinder compressive misfit strain. The static dielectric permittivity of BaZrO3 thin films under different misfit strains are obtained by calculating the optical phonon frequencies and Born effective charges using density functional perturbation theory. The zero-temperature dielectric permittivity increases to the maximum value under the tensile misfit strain, while the dielectric permittivity changes small under compressive misfit strain. This unsymmetrical dielectric behavior caused by strain is attributed to the soften phonon in BaZrO3 films.