The structure and dielectrics of epitaxially strained BaRO 3(R=Ti, Zr) thin films

Jinlong Tang,Jun Zhu,Jie Xiong,Wenfeng Qin,Yanrong Li

DOI: https://doi.org/10.1117/12.792149

2008-01-01

Abstract:The structure and static dielectric permittivity of BaRO3(R=Ti, Zr) thin films as a function of epitaxial strain are determined by using first-principle density functional theory calculation based on pseudopotentials and a plane-wave basis. It is found that BaTiO3 thin films under compressive misfit strain can be grown more easily than those under tensile misfit strain, while thin films of BaTiO3 can be grown more easily under tensile strain. The static dielectric permittivity of BaTiO3 thin films under different misfit strain is obtained by calculating optical phonon frequencies and Born effective charges using density functional perturbation theory. The zero-temperature dielectric permittivity of epsilon(33) increases to the maximal value under compressive misfit strain, while the epsilon(11/22) reaches to its maximal value under tensile misfit strain. For BaTiO3 thin films, the dielectric permittivity epsilon(r), changes little. However, epsilon(r) exhibits non-linear characteristics under tensile strain, which reaches to the maximal value under misfit strain of similar to 1%. This unsymmetrical dielectric behavior caused by strain is attributed to soften phonons in BaTiO3 or BaZr03 thin films.