Face-to-face transfer of wafer-scale graphene films

Libo Gao,Guang-Xin Ni,Yanpeng Liu,Bo Liu,Antonio H. Castro Neto,Kian Ping Loh

DOI: https://doi.org/10.1038/nature12763

IF: 64.8

2013-01-01

Nature

Abstract:High-quality graphene is grown on copper and then transferred to the underlying substrate, typically silicon oxide or quartz, by simply etching away the copper; the graphene is held in place during etching by capillary bridges.

What problem does this paper attempt to address?

Rapid and Scalable Transfer of Large‐area Graphene Wafers

Zhaoning Hu,Fangfang Li,Haotian Wu,Junhao Liao,Quan Wang,Ge Chen,Zhuofeng Shi,Yaqi Zhu,Saiyu Bu,Yixuan Zhao,Mingpeng Shang,Qi Lu,Kaicheng Jia,Qin Xie,Guorui Wang,Xiaodong Zhang,Yinbo Zhu,Hengan Wu,Hailin Peng,Li Lin,Zhongfan Liu

DOI: https://doi.org/10.1002/adma.202300621

IF: 29.4

2023-04-09

Advanced Materials

Abstract:Recently, scalable production of large‐area graphene films on metal foils with promising qualities has been successfully achieved by eliminating grain boundaries, wrinkles and adlayers. The transfer of graphene from growth metal substrates onto functional substrates remains one inescapable obstacle on the road to the real commercial applications of CVD graphene films. Current transfer methods still require time‐consuming chemical reactions, which hinders its mass production, and produces cracks and contamination that strongly impede performance reproducibility. Therefore, graphene transfer techniques with fine intactness and cleanness of transferred graphene, and improved production efficiency would be ideal for the mass production of graphene films on destination substrates. Herein, through the engineering of interfacial forces enabled by sophisticated design of transfer medium, we realize the crack‐free and clean transfer of 4‐inch‐sized graphene wafers onto silicon wafers within only 15 min. The reported transfer method is an important leap over the long‐lasting obstacle of the batch‐scale graphene transfer without degrading the quality of graphene, bringing the graphene products close to the real applications. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Crack-Free Transfer of Graphene Wafers Via Photoresist As Transfer Medium

Junhao Liao,Yixuan Zhao,Zhaoning Hu,Saiyu Bu,Qi Lu,Mingpeng Shang,Kaicheng Jia,Xiaohui Qiu,Qin Xie,Li Lin,Zhongfan Liu

DOI: https://doi.org/10.3866/pku.whxb202306038

2023-01-01

Acta Physico-Chimica Sinica

Abstract:Graphene offers exceptional properties, such as ultra-high carrier mobility, near-ballistic transport characteristics, and ultra-high-frequency operational response, making it an ideal material for radio-frequency devices and high-speed optical communications. To realize its potential applications, high-quality graphene films must be integrated onto target substrates with reliability, uniformity, and scalability. Despite significant progress in the chemical vapor deposition of high-quality graphene on catalytic metal substrates, the transfer of such films onto application-targeted substrates remains necessary for large-scale technological use, but it faces challenges like contaminations and cracks. Graphene's flexibility and single-atom thickness make it vulnerable to damage and folding during the transfer process due to force disturbances and uneven force distribution. Traditional graphene transfer methods employ organic polymers as a medium and remove them using organic solvents after transferring graphene onto the desired substrates. However, this repetitive process generates organic waste and leaves unavoidable contamination due to the limited solubility of the polymer. Furthermore, selective interlacing of organic solvents during polymer removal can detach graphene from the substrate and cause cracks. In this study, we demonstrate a novel approach to address these issues. Instead of using organic polymers, we directly use the photoresist as the transfer medium to mechanically delaminate graphene from the metal growth substrate onto the targeted substrate. By doing so, we eliminate the need for repeated polymer coating on the graphene surface, enabling successful transfer without crack formation, wrinkles, or unintentional doping. The strong interaction between graphene and the photoresist, coupled with the weakened interaction between graphene and the growth substrate due to oxidation, ensures crack-free delamination. Moreover, the photoresist serves as a patterned mask plate for exposure, etching, and other subsequent device fabrication processes. As a result, the electrical properties of graphene are improved, achieving an average carrier mobility of 6200 cm(2)center dot V-1 center dot s(-1). This integrated approach not only enhances the device performance of two-dimensional materials but also paves the way for future applications of such materials in electronics and photonics. In conclusion, our method offers a promising solution for the successful transfer and device fabrication of graphene, enhancing its potential in the field of electronics and photonics.
Transfer of Cvd-Grown Monolayer Graphene Onto Arbitrary Substrates

Ji Won Suk,Alexander Kitt,Carl W. Magnuson,Yufeng Hao,Samir Ahmed,Jinho An,Anna K. Swan,Bennett B. Goldberg,Rodney S. Ruoff

DOI: https://doi.org/10.1021/nn201207c

IF: 17.1

2011-01-01

ACS Nano

Abstract:Reproducible dry and wet transfer techniques were developed to improve the transfer of large-area monolayer graphene grown on copper foils by chemical vapor deposition (CVD). The techniques reported here allow transfer onto three different classes of substrates: substrates covered with shallow depressions, perforated substrates, and flat substrates. A novel dry transfer technique was used to make graphene-sealed microchambers without trapping liquid inside. The dry transfer technique utilizes a polydimethylsiloxane frame that attaches to the poly(methyl methacrylate) spun over the graphene film, and the monolayer graphene was transferred onto shallow depressions with 300 nm depth. The improved wet transfer onto perforated substrates with 2.7 μm diameter holes yields 98% coverage of holes covered with continuous films, allowing the ready use of Raman spectroscopy and transmission electron microscopy to study the intrinsic properties of CVD-grown monolayer graphene. Additionally, monolayer graphene transferred onto flat substrates has fewer cracks and tears, as well as lower sheet resistance than previous transfer techniques. Monolayer graphene films transferred onto glass had a sheet resistance of ∼980 Ω/sq and a transmittance of 97.6%. These transfer techniques open up possibilities for the fabrication of various graphene devices with unique configurations and enhanced performance.
Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects

Seung Ryul Na,Ji Won Suk,Li Tao,Deji Akinwande,Rodney S. Ruoff,Rui Huang,Kenneth M. Liechti

DOI: https://doi.org/10.1021/nn505178g

IF: 17.1

2015-02-06

ACS Nano

Abstract:A very fast, dry transfer process based on mechanical delamination successfully effected the transfer of large-area, CVD grown graphene on copper foil to silicon. This has been achieved by bonding silicon backing layers to both sides of the graphene-coated copper foil with epoxy and applying a suitably high separation rate to the backing layers. At the highest separation rate considered (254.0 μm/s), monolayer graphene was completely transferred from the copper foil to the target silicon substrate. On the other hand, the lowest rate (25.4 μm/s) caused the epoxy to be completely separated from the graphene. Fracture mechanics analyses were used to determine the adhesion energy between graphene and its seed copper foil (6.0 J/m(2)) and between graphene and the epoxy (3.4 J/m(2)) at the respective loading rates. Control experiments for the epoxy/silicon interface established a rate dependent adhesion, which supports the hypothesis that the adhesion of the graphene/epoxy interface was higher than that of the graphene/copper interface at the higher separation rate, thereby providing a controllable mechanism for selective transfer of graphene in future nanofabrication systems such as roll-to-roll transfer.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Surface tension traction transfer method for wafer-scale device grade graphene film

Wenqiang Hou,Youlong Xu,Yuan Zhang,Xiang Hua Yao,YiJie Xu

DOI: https://doi.org/10.1016/j.carbon.2022.12.055

IF: 10.9

2022-12-23

Carbon

Abstract:The integrity and cleanliness of graphene film is the core of graphene devices. However, the cleanliness and integrity of the graphene film can only be ensured when the transferred film area is small (less than 2╳2 cm 2 ), which leads to the extremely low preparation efficiency of graphene devices and limits its industrialization applications. But, the integrity and cleanliness of the graphene film will decrease with the increase of the transfer film area. Therefore, the clean and intact transfer of large area graphene films is extremely difficult, which limits the performance and development of graphene electronic devices. Hence, a wafer-scale(6-inch), intact and clean transfer method (Surface tension traction method) of chemical vapor deposition (CVD) copper-based monolayer, multilayer graphene and single crystals graphene are proposed, which is suitable for various target substrate (rigid substrate, such as:SiO 2 /Si, GaN, glass etc. or flexible substrate, such as PI, PET, PEN, etc.). The use of the watch glass ensures that the graphene film is not directly contacted with the transfer medium (slides, glass or silicon wafers) when the film is transferred between various solutions. And the surface tension of the water can ensure that the graphene is spread on the water surface, which minimizing the probability of graphene breakage, wrinkles and contamination. This also directly greatly reduces the residue of the PMMA layer. The average of 62500 spots of Raman spectrum peak intensity ratios (I D /I G ) is only 0.02318, The average hole mobility of GFETs prepared from graphene transferred can reach 3438 ± 84 cm 2 /Vs, which reveals the outstanding quality and uniformity of graphene transferred. The graphene transferred is expected to be applied in the fields of transparent, conductive electrodes, flexible films, electronic devices, heat dissipation and anti-corrosion, etc, to promote the industrial production of CVD graphene films.

materials science, multidisciplinary,chemistry, physical
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Joshua D. Caldwell,Travis J. Anderson,James C. Culbertson,Glenn G. Jernigan,Karl D. Hobart,Fritz J. Kub,Marko J. Tadjer,Joseph L. Tedesco,Jennifer K. Hite,Michael A. Mastro,Rachael L. Myers-Ward,Charles R. Eddy Jr.,Paul M. Campbell,D. Kurt Gaskill

DOI: https://doi.org/10.1021/nn901585p

2009-10-14

Abstract:In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.

Materials Science,Mesoscale and Nanoscale Physics,Other Condensed Matter
Clean and Efficient Transfer of CVD-grown Graphene by Electrochemical Etching of Metal Substrate

Xiwen Yang,Hailin Peng,Qin Xie,Yu Zhou,Zhongfan Liu

DOI: https://doi.org/10.1016/j.jelechem.2012.09.025

IF: 4.598

2012-01-01

Journal of Electroanalytical Chemistry

Abstract:An electrochemical etching technique was developed to achieve a clean and efficient transfer of large-area graphene films grown on copper foils by chemical vapor deposition without degrading the quality of graphene. Clean transfer for continuous graphene films with fewer impurities and unintentional p-type doping in comparison with conventional wet-etching in oxidant solutions was confirmed by optical microscopy, scanning electron microscopy, atomic force microscopy, ultraviolet–visible spectroscopy, and Raman spectroscopy. This electrochemical transfer technique can be scaled up for industrial use and generalized to various substrates by selecting suitable oxidation voltage and electrolytes, which opens the door for the fabrication of large-scale graphene devices with enhanced performance.
Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Sebastian Wittmann,Stephan Pindl,Simon Sawallich,Michael Nagel,Alexander Michalski,Himadri Pandey,Ardeshir Esteki,Satender Kataria,Max C. Lemme

DOI: https://doi.org/10.1002/admt.202201587

2022-09-30

Abstract:Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device integration must be applicable at the wafer level and meet the stringent requirements of semiconductor fabrication lines. In this work, wet and semidry transfer (i.e. wafer bonding) are evaluated regarding wafer scalability, handling, potential for automation, yield, contamination and electrical performance. A wafer scale tool was developed to transfer graphene from 150 mm copper foils to 200 mm silicon wafers with-out adhesive intermediate polymers. The transferred graphene coverage ranged from 97.9% to 99.2% for wet transfer and from 17.2% to 90.8% for semidry transfer, with average cop-per contaminations of 4.7x10$^{13}$ (wet) and 8.2x10$^{12}$ atoms/cm$^2$ (semidry). The corresponding electrical sheet resistance extracted from terahertz time-domain spectroscopy varied from 450 to 550 ${\Omega}/sq$ for wet transfer and from 1000 to 1650 ${\Omega}/sq$ for semidry transfer. Although wet transfer is superior in terms of yield, carbon contamination level and electrical quality, wafer bonding yields lower copper contamination levels and provides scalability due to existing in-dustrial tools and processes. Our conclusions can be generalized to all two-dimensional (2D) materials.

Applied Physics
High-quality Graphene Transfer Via Directional Etching of Metal Substrates.

Xuewei Zhang,Zehao Wu,Haoran Zheng,Qiancheng Ren,Zhenxing Zou,Le Mei,Zilong Zhang,Yang Xia,Cheng-Te Lin,Pei Zhao,Hongtao Wang

DOI: https://doi.org/10.1039/c9nr05315h

IF: 6.7

2019-01-01

Nanoscale

Abstract:Large-scale applications of graphene require its high-efficiency transfer from growth metal substrates to any other substrates of interest. The wrinkles and folds generated during the transfer process of graphene by the well-known poly(methyl methacrylate) (PMMA)-assisted technique is a critical issue. Here, we report an improvement of this method by applying a directional etching process for the removal of the growth Cu substrates, using a pair of electrodes inserted into the etchant with a constant current to form an electrochemical system. The controlled redox reactions between the Cu and the solution environment result in the etching of Cu in a part-by-part manner strictly from one end to the other. The consistency of the Cu etching direction can avoid the formation of an easily destroyable Cu structure and release the stress concentration that is usually generated during the random etching process, and finally yield significantly improved quality of the transferred graphene film with a lowered density of wrinkles, cracks/folds, adlayers, reduced root-mean-square of surface roughness, and increased performance in sheet resistance and carrier mobility.
A Scalable Polymer-Free Method for Transferring Graphene Onto Arbitrary Surfaces

Xuewei Zhang,Chen Xu,Zhenxing Zou,Zehao Wu,Shaoqian Yin,Zilong Zhang,Jinglan Liu,Yang Xia,Cheng-Te Lin,Pei Zhao,Hongtao Wang

DOI: https://doi.org/10.1016/j.carbon.2020.01.111

IF: 10.9

2020-01-01

Carbon

Abstract:An efficient and reliable transfer for graphene onto the substrates of interests acts as the crucial bridge between the graphene synthesis and applications. The main reason that this issue has not been fully addressed is the use of a polymer medium to protect the one-atom-thick material during the transfer process. Here we demonstrate a general and scalable method to transfer chemical-vapor-deposited graphene onto arbitrary surfaces without any polymers, which yields the transfer of macroscopically and microscopically clean, continuous and uniform graphene samples onto a wide variety of substrates, as well as the scalable layer-by-layer graphene epitaxial structures. Moreover, the transferred graphene exhibits an overall 100% enhancement in the electrical conductivity compared with the conventional method, so that various high-performance flexible transparent electrodes can be demonstrated. We believe that this new transfer technique will offer the opportunities to the industrialization of next generations of flexible electronics and other graphene-based disruptive technologies.
Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Libo Gao,Hai Xu,Linjun Li,Yang Yang,Qiang Fu,Xinhe Bao,Kian Ping Loh

DOI: https://doi.org/10.1088/2053-1583/3/2/021001

IF: 6.861

2016-01-01

2D Materials

Abstract:The chemical vapor deposition (CVD) of graphene on Cu has attracted much attention because of its industrial scalability. Herein, we report inductively coupled plasma-assisted CVD of epitaxially grown graphene on (111)-textured Cu film alloyed with a small amount of Ni, where large area high quality graphene film can be grown in less than 5 min at 800 degrees C, thus affording industrial scalability. The epitaxially grown graphene films on (111)-textured Cu contain grains which are predominantly aligned with the Cu lattice and about 10% of 30 degrees-rotated grains (anti-grains). Such graphene films are exclusively monolayer and possess good electrical conductivity, high carrier mobility, and room temperature quantum Hall effect. Magnetoresistance measurements reveal that the reduction of the grain sizes from 150 nmto 50 nm produce increasing Anderson localization and the appearance of a transport gap. Owing to the presence of grain boundaries in these anti-grains, epitaxially grown graphene films possess n-type characteristics and exhibit ultra-high sensitivity to adsorbates.
Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

Haina Ci,Jingtao Chen,Hao Ma,Xiaoli Sun,Xingyu Jiang,Kaicong Liu,Jingyuan Shan,Xueyu Lian,Bei Jiang,Ruojuan Liu,Bingzhi Liu,Guiqi Yang,Wanjian Yin,Wen Zhao,Lizhen Huang,Teng Gao,Jingyu Sun,Zhongfan Liu

DOI: https://doi.org/10.1002/adma.202206389

IF: 29.4

2022-01-01

Advanced Materials

Abstract:The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.
A breakthrough toward wafer-size epitaxial graphene transfer

A. Hashimoto,H. Terasaki,K. Morita,H. Hibino,S. Tanaka

DOI: https://doi.org/10.48550/arXiv.1005.4725

2010-05-26

Abstract:The formation of graphene on any desirable substrate is extremely essential for the successful replacement of Si with graphene in all technological applications in the beyond-CMOS era. Recently, we observed that a Ti layer formed on epitaxial graphene by electron-beam evaporation has the sufficiently large area of contact with the surface of epitaxial graphene for the exfoliation process to take place. We also observed that the exfoliated FLG on the Ti layer can be easily transferred onto a SiO2/Si substrate. In this paper, we have proposed a new technique for transferring graphene having a large area of several square mm from the graphitized vicinal SiC substrate. Raman scattering spectroscopy and low-energy electron microscopy analysis have revealed that we can transfer mono-layer and bi-layer graphene onto the SiO2/Si substrate by using the proposed transfer process. The initial size of epitaxial graphene formed on the SiC substrate is the only limitation of the new transfer process. The transfer process is expected to become an extremely important technology that will mark the beginning of a new era in the field of graphene electronics.

Materials Science
Controllable Sliding Transfer of Wafer-Size Graphene

Wenjing Lu,Mengqi Zeng,Xuesong Li,Jiao Wang,Lifang Tan,Miaomiao Shao,Jiangli Han,Sheng Wang,Shuanglin Yue,Tao Zhang,Xuebo Hu,Rafael G. Mendes,Mark H. Rummeli,Lianmao Peng,Zhongfan Liu,Lei Fu

DOI: https://doi.org/10.1002/advs.201600006

IF: 15.1

2016-01-01

Advanced Science

Abstract:The innovative design of sliding transfer based on a liquid substrate can succinctly transfer high-quality, wafer-size, and contamination-free graphene within a few seconds. Moreover, it can be extended to transfer other 2D materials. The efficient sliding transfer approach can obtain high-quality and large-area graphene for fundamental research and industrial applications.
Wafer-scale synthesis and transfer of monolayer graphene

Xueshen Wang,Jinjin Li,Qing Zhong,Yuan Zhong,Mengke Zhao

DOI: https://doi.org/10.1109/NANO.2013.6720807

2013-01-01

Abstract:Wafer-scale monolayer graphene film was synthesized on Cu foils by chemical vapor deposition in a 3-in thermal furnace. Graphene film was transferred to the surface of SiO2 (300 nm)/Si substrates using a polymer-assisted method. Hall bar structures were fabricated by lithography and E-beam deposition for the electrical property measurement. Perfect symmetrical ohmic resistance distribution was achieved. The longitudinal resistance was measured at different temperatures, and it showed negative differential resistance behavior with temperatures below 88K. Wafer scale graphene were also transferred to a flexible poly (ethylene terephthalate) (PET) substrate for flexible electronics application. The transmittance of the monolayer graphene at 550 nm was measured to be 95.6% and the sheet resistance was 5.6kμ/□. © 2013 IEEE.
Transfer of graphene onto arbitrary substrates via sublimable carrier

Yu-Hao Deng

DOI: https://doi.org/10.48550/arXiv.2010.11534

2020-10-22

Materials Science

Abstract:Graphene, a monolayer of carbon atoms packed into a two-dimensional crystal structure, attracted intense attention owing to its unique structure and optical, electronic properties. Recent advances in chemical vapor deposition (CVD) have led to the batch production of high quality graphene on metal foils. However, further applications are required in the way these graphenes are transferred from their growth substrates onto the target substrate. Here, we report a sublimable carrier method that allows the graphene to be transferred with high quality onto arbitrary substrates, including semiconductor, metal and organic substrates. The intrinsic problems of the residue and environmentally unfriendly organic solvents have been solved due to the polymer-free process. Optical microscopy, scanning electron microscopy (SEM) and Raman spectroscopy demonstrate the high quality and clean surface of the transferred graphene. This work provides a new way of optimizing graphene transfer and widens the applications of graphene in large-scale 2D electronics.
Toward Clean and Crackless Transfer of Graphene

Xuelei Liang,Brent A. Sperling,Irene Calizo,Guangjun Cheng,Christina Ann Hacker,Qin Zhang,Yaw Obeng,Kai Yan,Hailin Peng,Qiliang Li,Xiaoxiao Zhu,Hui Yuan,Angela R. Hight Walker,Zhongfan Liu,Lian-mao Peng,Curt A. Richter

DOI: https://doi.org/10.1021/nn203377t

IF: 17.1

2011-01-01

ACS Nano

Abstract:We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step toward large-scale graphene-based electronic device applications.
Transfer Printing of CVD Graphene FETs on Patterned Substrates

T. S. Abhilash,Roberto De Alba,Nikolay Zhelev,Harold G Craighead,Jeevak M Parpia

DOI: https://doi.org/10.1039/c5nr03501e

2016-01-07

Abstract:We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 +- 340 Ohm-micrometer. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.

Mesoscale and Nanoscale Physics
Transferring and Identification of Single- and Few-Layer Graphene on Arbitrary Substrates

Alfonso Reina,Hyungbin Son,Liying Jiao,Ben Fan,Mildred S. Dresselhaus,ZhongFan Liu,Jing Kong

DOI: https://doi.org/10.1021/jp807380s

2008-01-01

Abstract:The transferring and identification of single- and few- layer graphene sheets from SiO2/Si substrates to other types of substrates is presented. Features across large areas (similar to cm(2)) having single and few-layer graphene flakes, obtained by the microcleaving of highly oriented pyrolytic graphite (HOPG), can be transferred reliably. This method enables the fast localization of graphene sheets on substrates on which optical microscopy does not allow direct and fast visualization of the thin graphene sheets. No major morphological deformations, corrugations, or defects are induced on the graphene films when transferred to the target surface. Moreover, the differentiation between single and bilayer graphene via the G' (similar to 2700 cm(-1)) Raman peak is demonstrated on various substrates. This approach opens up possibilities for the fabrication of graphene devices on a substrate material other than SiO2/Si.
Recent trends in the transfer of graphene films.

Yaqi Zhu,Zhuofeng Shi,Yixuan Zhao,Saiyu Bu,Zhaoning Hu,Junhao Liao,Qi Lu,Chaofan Zhou,Bingbing Guo,Mingpeng Shang,Fangfang Li,Zhiying Xu,Jialin Zhang,Qin Xie,Chunhu Li,Pengzhan Sun,Boyang Mao,Xiaodong Zhang,Zhongfan Liu,Li Lin

DOI: https://doi.org/10.1039/d3nr05626k

IF: 6.7

2024-01-01

Nanoscale

Abstract:Recent years have witnessed advances in chemical vapor deposition growth of graphene films on metal foils with fine scalability and thickness controllability. However, challenges for obtaining wrinkle-free, defect-free and large-area uniformity remain to be tackled. In addition, the real commercial applications of graphene films still require industrially compatible transfer techniques with reliable performance of transferred graphene, excellent production capacity, and suitable cost. Transferred graphene films, particularly with a large area, still suffer from the presence of transfer-related cracks, wrinkles and contaminants, which would strongly deteriorate the quality and uniformity of transferred graphene films. Potential applications of graphene films include moisture barrier films, transparent conductive films, electromagnetic shielding films, and optical communications; such applications call different requirements for the performance of transferred graphene, which, in turn, determine the suitable transfer techniques. Besides the reliable transfer process, automatic machines should be well developed for the future batch transfer of graphene films, ensuring the repeatability and scalability. This mini-review provides a summary of recent advances in the transfer of graphene films and offers a perspective for future directions of transfer techniques that are compatible for industrial batch transfer.

Face-to-face transfer of wafer-scale graphene films

Rapid and Scalable Transfer of Large‐area Graphene Wafers

Crack-Free Transfer of Graphene Wafers Via Photoresist As Transfer Medium

Transfer of Cvd-Grown Monolayer Graphene Onto Arbitrary Substrates

Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects

Surface tension traction transfer method for wafer-scale device grade graphene film

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Clean and Efficient Transfer of CVD-grown Graphene by Electrochemical Etching of Metal Substrate

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

High-quality Graphene Transfer Via Directional Etching of Metal Substrates.

A Scalable Polymer-Free Method for Transferring Graphene Onto Arbitrary Surfaces

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

A breakthrough toward wafer-size epitaxial graphene transfer

Controllable Sliding Transfer of Wafer-Size Graphene

Wafer-scale synthesis and transfer of monolayer graphene

Transfer of graphene onto arbitrary substrates via sublimable carrier

Toward Clean and Crackless Transfer of Graphene

Transfer Printing of CVD Graphene FETs on Patterned Substrates

Transferring and Identification of Single- and Few-Layer Graphene on Arbitrary Substrates

Recent trends in the transfer of graphene films.