Abstract:The elastic properties of 1D nanostructures such as nanowires are often measured experimentally through actuation of the nanowire at its resonance frequency, and then relating the resonance frequency to the elastic stiffness using elementary beam theory. In the present work, we utilize large scale molecular dynamics simulations to report a novel beat phenomenon in [110] oriented Ag nanowires. The beat phenomenon is found to arise from the asymmetry of the lattice spacing in the orthogonal elementary directions of the [110] nanowire,i.e., [-110] and [001] directions, which results in two different principal moments of inertia. Because of this, actuations imposed along any other direction are found to decompose into two orthogonal vibrational components based on the actuation angle relative to these two elementary directions, with this phenomenon being generalizable to <110> FCC nanowires of different materials (Cu, Au, Ni, Pd and Pt).The beat phenomenon is explained using a discrete moment of inertia model based on the hard sphere assumption, the model is utilized to show that surface effects enhance the beat phenomenon, while the effect is reduced with increasing nanowires cross-sectional size or aspect ratio.Most importantly, due to the existence of the beat phenomena, we demonstrate that in resonance experiments only a single frequency component is expected to be observed, particularly when the damping ratio is relatively large or very small.Furthermore, for a large range of actuation angles, the lower frequency is more likely to be detected than the higher one,which implies the experimental predictions of Young's modulus obtained from resonance may in fact be under predictions. The present study therefore has significant implications for experimental interpretations of Young's modulus as obtained via resonance testing.

Anelastic behavior in GaAs semiconductor nanowires.

In Situ Mechanical Resonance Behaviour of Pristine and Defective Zinc Blende GaAs Nanowires

In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation

Beat Phenomena in Metal Nanowires, and Their Implications for Resonance-Based Elastic Property Measurements.

Tunable Anelasticity in Amorphous Si Nanowires

Surface Deformation-Dependent Mechanical Properties of Bending Nanowires: an Ab Initio Core-Shell Model

Super deformability and Young's modulus of GaAs nanowires.

In situ nanomechanics of GaN nanowires

Strong Hall-Petch Type Behavior in the Elastic Strain Limit of Nanotwinned Gold Nanowires

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Large anelasticity and associated energy dissipation in single-crystalline nanowires

Atomistic Simulations of the Size, Orientation, and Temperature Dependence of Tensile Behavior in Gan Nanowires

Mechanical Responses of A-Axis GaN Nanowires under Axial Loads.

Co-development of significant elastic and reversible plastic deformation in nanowires

Strengthening Brittle Semiconductor Nanowires Through Stacking Faults: Insights from in Situ Mechanical Testing.

Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale

In situ study on transport property of bending GaAs nanowires in transmission electron microscope

Effect of Growth Orientation and Diameter on the Elasticity of Gan Nanowires. A Combined in Situ Tem and Atomistic Modeling Investigation

Orientation and Temperature Dependence of the Tensile Behavior of GaN Nanowires: an Atomistic Study

Attraction of semiconductor nanowires: An in situ observation