Abstract:Doping as one of the popular methods to manipulate the properties of nanomaterials has received extensive application in deriving different types of graphene derivates, while the understanding of the resonance properties of dopant graphene is still lacking in literature. Based on the large-scale molecular dynamics simulation, reactive empirical bond order potential, as well as the tersoff potential, the resonance properties of N-doped graphene were studied. The studied samples were established according to previous experiments with the N atom’s percentage ranging from 0.38%-2.93%, including three types of N dopant locations, i.e., graphitic N, pyrrolic N and pyridinic N. It is found that different percentages of N-dopant exert different influence to the resonance properties of the graphene, while the amount of N-dopant is not the only factor that determines its impact. For all the considered cases, a relative large percentage of N-dopant (2.65% graphitic N-dopant) is observed to introduce significant influence to the profile of the external energy, and thus lead to an extremely low Q-factor comparing with that of the pristine graphene. The most striking finding is that the natural frequency of the defective graphene with N-dopant’s percentage higher than 0.89% appears larger than its pristine counterpart. For the perfect graphene, the N-dopant shows larger influence to its natural frequency. This study will enrich the current understanding of the influence of dopants on graphene, which will eventually shed lights on the design of different molecules-doped graphene sheet.

Tuning the Dirac Point in CVD-grown Graphene Through Solution Processed N-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1h-benzoimidazole.

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Electron-doping of Graphene-Based Devices by Hydrazine

Graphene Dirac Point Tuned by Ferroelectric Polarization Field

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Controlled Ambipolar-to-unipolar Conversion in Graphene Field-Effect Transistors Through Surface Coating with Poly(ethylene Imine)/poly(ethylene Glycol) Films.

Tuning of electrical properties of CVD grown graphene by surface doping with organic molecules

Highly Stable and Tunable N-Type Graphene Field-Effect Transistors with Poly(Vinyl Alcohol) Films

Tuning the Doping Types in Graphene Sheets by N Monoelement

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Programmable graphene doping via electron beam irradiation

Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties.

Atomistic Mechanisms of Codoping-Induced p- to n-Type Conversion in Nitrogen-Doped Graphene

Efficient n-type Doping in Epitaxial Graphene through Strong Lateral Orbital Hybridization of Ti Adsorbate

Controlling doping in graphene through a SiC substrate: A first-principles study

Metal To Insulator Transition In Epitaxial Graphene Induced By Molecular Doping

Synthesis of N-doped graphene film with tunable graphitic and pyridinic doping content

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Controlled doping of graphene by impurity charge compensation via a polarized ferroelectric polymer

Chemical vapor deposition-grown nitrogen-doped graphene’s synthesis, characterization and applications