Abstract:Block copolymer lithography, an alternative lithographic technique by which self-assembled patterns made from block copolymer thin films are used as lithographic masks, has achieved a high enough level of maturity to be considered for nanofabrication in magnetic recording bit patterned media and in some applications in the semiconductor industry. As the demand for lithographic dimensions squeezes into the single-digit nm scale, pairing block copolymer materials that segregate at these dimensions with adequate pattern transfer techniques is increasingly difficult. For example, PS-b-PMMA, the most mature block copolymer system can only form line/space patterns with pattern transfer above 10 nm. Other promising materials like P2VP-PS-P2VP triblocks, however, lack sufficient etch contrast for reactive ion etching. Here, we present a nanofabrication strategy that integrates atomic layer deposition, ALD, with block copolymer lithography to enable fabrication of sub-10nm features for high density magnetic storage. The selective, cyclic and self-terminating nature of the materials synthesis within ALD reactors provides powerful nanofabrication tools. In particular, two of these tools stand out as enablers for high density patterning: First, the chemical selectivity of the organometallic precursors has facilitated selective synthesis inside porous polymeric materials. Second, the conformality afforded by the self-terminating nature of the ALD reactions has proven to be ideally suited for feature doubling in self-aligned double patterning, SADP. Integrating these powerful tools with block copolymer lithography opens new possibilities in two fronts: On the one hand, it is possible to generate hybrid nanocomposites with nanometer-scale resolution and high etching contrast. This is particularly useful for high resolution block copolymer materials for which no natural etch contrast exists such as P2VP-PS-P2VP triblocks. On the other hand, it is possible to use the already sub-lithographic features obtained by standard PS-b-PMMA block copolymer lithography as the starting point for an additional density multiplication using spacer lines grown by ALD for SADP. Be it for selective infiltration synthesis in block copolymer patterns or for the precise conformal growth in nanostructures made from block copolymers, ALD is likely to emerge as an ideal complimentary technique to block copolymer self assembly to enable sub-10nm lithography.

Directed Block Copolymer Assembly Versus Electron Beam Lithography for Bit-Patterned Media with Areal Density of 1 Terabit/inch(2) and Beyond.

Boundary-Directed Epitaxy of Block Copolymers

Directed self-assembly of high-chi block copolymer for nano fabrication of bit patterned media via solvent annealing

Directed Self-Assembly of Ternary Blends of Block Copolymer and Homopolymers on Chemical Patterns

Directed Block Copolymer Self-Assembly Implemented Via Surface-Embedded Electrets

One-pot Synthesis of Octablock Copolymers of High-Molecular Weight Via RAFT Emulsion Polymerization

High Density Multiplication of Graphoepitaxy Directed Block Copolymer Assembly on Two-Dimensional Lattice Template

Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Directed Self-Assembly of Polystyrene-b-poly(propylene Carbonate) on Chemical Patterns Via Thermal Annealing for Next Generation Lithography

Enabling Sub-10nm Lithography with Atomic Layer Deposition and Block Copolymer Self Assembly

Blending Linear and Cyclic Block Copolymers to Manipulate Nanolithographic Feature Dimensions

Directed Self-Assembly of Binary AB/AB Diblock Copolymer Blends for Dense Nanopatterns with Density Multiplication

Sequential Nanopatterned Block Copolymer Self-Assembly on Surfaces.

Improved Processing Window of Contact Hole with Directed Self-Assembly of Block Copolymer Blends

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach

Combining Double Patterning with Self-Assembled Block Copolymer Lamellae to Fabricate 10.5 Nm Full-Pitch Line/space Patterns

Manipulating the processing window of directed self-assembly in contact hole shrinking with binary block copolymer/homopolymer blending

Directed Self-Assembly of Poly(styrene-B-vinyl Acetate) Block Copolymers on Chemical Patterns for Sub-10 Nm Nanopatterning Via Thermal Annealing

Fabrication of Nanodevices Through Block Copolymer Self-Assembly

High χ P2PFBEMA- b -P2VP Block Copolymers Forming 6-8 nm Domains for Semiconductor Lithography

The One-Pot Directed Assembly of Cylinder-Forming Block Copolymer on Adjacent Chemical Patterns for Bimodal Patterning.