Abstract:Bottom-up self-assembly of high-density block-copolymer nanopatterns is of significant interest for a range of technologies, including memory storage and low-cost lithography for on-chip applications. The intrinsic or native spacing of a given block copolymer is dependent upon its size (N, degree of polymerization), composition, and the conditions of self-assembly. Polystyrene-block-polydimethylsiloxane (PS-b-PDMS) block copolymers, which are well-established for the production of strongly segregated single-layer hexagonal nanopatterns of silica dots, can be layered sequentially to produce density-doubled and -tripled nanopatterns. The center-to-center spacing and diameter of the resulting silica dots are critical with respect to the resulting double- and triple-layer assemblies because dot overlap reduces the quality of the resulting pattern. The addition of polystyrene (PS) homopolymer to PS-b-PDMS reduces the size of the resulting silica dots but leads to increased disorder at higher concentrations. The quality of these density-multiplied patterns can be calculated and predicted using parameters easily derived from SEM micrographs of corresponding single and multilayer patterns; simple geometric considerations underlie the degree of overlap of dots and layer-to-layer registration, two important factors for regular ordered patterns, and clearly defined dot borders. Because the higher-molecular-weight block copolymers tend to yield more regular patterns than smaller block copolymers, as defined by order and dot circularity, this sequential patterning approach may provide a route toward harnessing these materials, thus surpassing their native feature density.

High Density Multiplication of Graphoepitaxy Directed Block Copolymer Assembly on Two-Dimensional Lattice Template

Boundary-Directed Epitaxy of Block Copolymers

Directed Self-Assembly of Ternary Blends of Block Copolymer and Homopolymers on Chemical Patterns

Directed Self-Assembly of Binary AB/AB Diblock Copolymer Blends for Dense Nanopatterns with Density Multiplication

Directed Block Copolymer Self-Assembly Implemented Via Surface-Embedded Electrets

Sequential Nanopatterned Block Copolymer Self-Assembly on Surfaces.

Single crystals and two-dimensional crystalline assemblies of block copolymers

Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns

Manipulating the processing window of directed self-assembly in contact hole shrinking with binary block copolymer/homopolymer blending

Improved Processing Window of Contact Hole with Directed Self-Assembly of Block Copolymer Blends

Fabrication of Nanodevices Through Block Copolymer Self-Assembly

Directed Self-Assembly of Cylinder-Forming Block Copolymers Using Pillar Topographic Patterns

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Highly Tunable Complementary Micro/Submicro-Nanopatterned Surfaces Combining Block Copolymer Self-Assembly and Colloidal Lithography.

Directed Self-Assembly of Templatable Block Copolymers by Easily Accessible Magnetic Control

Dual-Phase Separation in a Semiconfined System: Monodispersed Heterogeneous Block-Copolymer Membranes for Cell Encoding and Patterning.

Post-directed-self-assembly Membrane Fabrication for in Situ Analysis of Block Copolymer Structures

Block Copolymer Self‐Assembly Directed Synthesis of Porous Materials with Ordered Bicontinuous Structures and Their Potential Applications

Synthesis of Liquid Crystalline Block Copolymers Self-assembled into Sub-5 Nm Microdomains

Combining Double Patterning with Self-Assembled Block Copolymer Lamellae to Fabricate 10.5 Nm Full-Pitch Line/space Patterns

Soft-Shear-Aligned Vertically Oriented Lamellar Block Copolymers for Template-Free Sub-10 nm Patterning and Hybrid Nanostructures