Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) combines advantages of conventional photolithography and polymeric materials and shows competence in semiconductors and data storage applications. Driven by the more integrated, much smaller and higher performance of the electronics, however, the industry standard polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in DSA strategy cannot meet the rapid development of lithography technology because its intrinsic limited Flory-Huggins interaction parameter (χ). Despite hundreds of block copolymers have been developed, these BCPs systems are usually subject to a trade-off between high χ and thermal treatment, resulting in incompatibility with the current nanomanufacturing fab processes. Here we discover that polystyrene-b-poly(propylene carbonate) (PS-b-PPC) is well qualified to fill key positions on DSA strategy for the next-generation lithography. The estimated χ-value for PS-b-PPC is 0.079, that is, two times greater than PS-b-PMMA (χ = 0.029 at 150 °C), while processing the ability to form perpendicular sub-10 nm morphologies (cylinder and lamellae) via the industry preferred thermal-treatment. DSA of lamellae forming PS-b-PPC on chemoepitaxial density multiplication demonstrates successful sub-10 nm long-range order features on large-area patterning for nanofabrication. Pattern transfer to the silicon substrate through industrial sequential infiltration synthesis is also implemented successfully. Compared with the previously reported methods to orientation control BCPs with high χ-value (including solvent annealing, neutral top-coats, and chemical modification), the easy preparation, high χ value, and etch selectivity while enduring thermal treatment demonstrates PS-b-PPC as a rare and valuable candidate for advancing the field of nanolithography.

High χ P2PFBEMA- b -P2VP Block Copolymers Forming 6-8 nm Domains for Semiconductor Lithography

Boundary-Directed Epitaxy of Block Copolymers

Sub-10 Nm Feature Sizes of Disordered Polystyrene-block-poly(methyl Methacrylate) Copolymer Films Achieved by Ionic Liquid Additives with Selectively Distributed Charge Interactions

Fabrication of High Χ-Low N Block Copolymers with Thermally Stable Sub-5 Nm Microdomains Using Polyzwitterion As a Constituent Block

Poly(2-vinylpyridine)-b-poly(fluorinated Methacrylate) Block Copolymers Forming 5 Nm Domains Containing Metallocene

One-pot Synthesis of Octablock Copolymers of High-Molecular Weight Via RAFT Emulsion Polymerization

Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Block Copolymers with a Fluoro-Block for 5 Nm DSA Patterning Application

Synthesis of Liquid Crystalline Block Copolymers Self-assembled into Sub-5 Nm Microdomains

Directed self-assembly of high-chi block copolymer for nano fabrication of bit patterned media via solvent annealing

High Etch Resistant Ferrocene-Containing Block Copolymers with 5 Nm Patterning Capability

Directed Self-Assembly of Polystyrene-b-poly(propylene Carbonate) on Chemical Patterns Via Thermal Annealing for Next Generation Lithography

Synthesis of Fluorine-containing Polyacrylamide Block Copolymer and Their Application for Rapidly Formation of Sub-10 Nm Microdomains

Morphology Control of Perpendicularly Oriented Lamellar Films from Azobenzene-Containing Block Copolymers with Different Spacer Lengths

Electrostatic Crosslinking-Enabled Highly Asymmetric Lamellar Nanostructures of Polyzwitterionic Block Copolymers for Lithography.

Si Containing Block Copolymers Quickly Assemble into Sub-6 Nm Domains

Blending Linear and Cyclic Block Copolymers to Manipulate Nanolithographic Feature Dimensions

High molecular weight block copolymer lithography for nanofabrication of hard mask and photonic nanostructures

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach

Combining Double Patterning with Self-Assembled Block Copolymer Lamellae to Fabricate 10.5 Nm Full-Pitch Line/space Patterns

Hydrolysis-Induced Morphology Evolution of Linear and Bottlebrush Block Copolymers in Thin Films with Acid Vapor or Photoacid Generators