Abstract:Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

Wafer-Scale Graphene Integrated Circuit

Inverted Process Implementation of Monolithic Graphene Mixer

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Carbon‐Based Interconnects for RF Nanoelectronics

Gigahertz flexible graphene transistors for microwave integrated circuits

Double-Balanced Graphene Integrated Mixer with Outstanding Linearity.

Graphene Electronics: Materials, Devices, and Circuits

Monolithic Graphene Frequency Multiplier Working at 10ghz Range

Wafer-Scale Integration of Graphene-Based Electronic, Optoelectronic and Electroacoustic Devices

Graphene Technology for RF and THz Applications

Inverted Process for Graphene Integrated Circuits Fabrication

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Graphene/Si CMOS Hybrid Hall Integrated Circuits

Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform

Graphene integrated circuits: new prospects towards receiver realisation

Graphene/Si CMOS hybrid hall integrated circuits.

Graphene review: An emerging RF technology

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass.

A Novel Graphene Double-Balanced Passive Mixer.