Abstract: The silicon-based electronic technology has made quite a great progress in the past five decades since the invention of the integrated circuit [1]. The advance is maintained primarily through the size scaling of the devices, i.e., metal-oxide-semiconductor field-effect transistor (MOSFET), which has resulted in many successive generations of devices with increased transistor performance and density. In case of the continual decrease for the device dimensions at a present speed, most of scientists forecast that the development of the integrated circuit will meet its physical and theoretical limit soon, perhaps in next decade [2–4]. To keep the device performance continuing to update, the seeking and preparation of new technologies is mandatory [5]. So far, two distinct routes have been taken to address that issue. One of them is to adopt the revolutionary technologies based on totally new concepts, e.g., two-terminal molecular devices [6], quantum computing [7], spintronics [8], and so on. However, these technologies will be incompatible with present application developed from silicon-based electronic industry. In the other case, attention is paid to a more evolutionary approach that is based on the well-established three terminal transistor concept, but utilizes alternative materials, specially single-walled carbon nanotubes (SWCNTs) that possess many unique advantages including onedimensional nanoscale structure as well as the excellent electrical and optical properties [5]. High-mobility, low-defect structure and intrinsic nanometer scale of carbon nanotubes (CNTs) have led to an intense research effort into the viability of utilizing carbon-nanotube field-effect transistors (CNTFETs) as a replacement for, or a complement to, future semiconductor devices [9–17].

Carbon Nanotube Multi-Channeled Field-Effect Transistors.

Field-effect Transistors with Multiple Channels Constructed by Carbon Nanotubes

Multichannel Carbon Nanotube Field-Effect Transistors with Compound Channel Layer

Fabrication and Characterization of the Performance of Multi-Channel Carbon-Nanotube Field-Effect Transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Nanowelded Multichannel Carbon-Nanotube Field-Effect Transistors (MC-CNTFETs)

Multichannel Carbon-Nanotube FETs and Complementary Logic Gates With Nanowelded Contacts

High performance field effect transistors made of a multiwall nanotube intramolecular junction

High Performance Field-Effect Transistors Made of A Multiwall Cnx/C Nanotube Intramolecular Junction

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: the Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (adv. Mater. 13/2009)

Direct Growth of Horizontally Aligned Carbon Nanotubes Between Electrodes and Its Application to Field-Effect Transistors

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Self-aligned Multi-Channel Silicon Nanowire Field-Effect Transistors

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Nanotube and Nanowire Transistors

Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes