Abstract:One of the most fascinating and important merits of graphene plasmonics is their tunability over a wide range. While chemical doping has proven to be a facile and effective way to create graphene plasmons, most of the previous studies focused on the macroscopic behaviors of the plasmons in chemically-doped graphene and little was known about their nanoscale responses and related mechanisms. Here, to the best of our knowledge, we present the first experimental near-field optical study on chemically-doped graphene with improved surface plasmon characteristics. By using a scattering-type scanning near-field optical microscope (s-SNOM), we managed to show that the graphene plasmons can be tuned and improved using a facile chemical doping method. Specifically, the plasmon interference patterns near the edge of the monolayer graphene were substantially enhanced via nitric acid (HNO3) exposure. The plasmon-related characteristics can be deduced by analyzing such plasmonic fringes, which exhibited a longer plasmon wavelength and reduced plasmon damping rate. In addition, the local carrier density and therefore the Fermi energy level (EF) of graphene can be obtained from the plasmonic nano-imaging, which indicated that the enhanced plasmon oscillation originated from the injection of free holes into graphene by HNO3. These findings were further corroborated by theoretical calculations using density functional theory (DFT). We believe that our findings provide a clear nanoscale picture on improving graphene plasmonics by chemical doping, which will be helpful for optimizing graphene plasmonics and for elucidating the mechanisms of two-dimensional light confinement by atomically thick materials.

Room-temperature Edge Functionalization and Doping of Graphene by Mild Plasma.

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

N-Doping of Graphene Through Electrothermal Reactions with Ammonia

Efficient Green Emission from Edge States in Graphene Perforated by Nitrogen Plasma Treatment

Patterned Graphene Functionalization Via Mask-Free Scanning of Micro-Plasma Jet under Ambient Condition

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Plasmon-induced doping of graphene.

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Thinning and Functionalization of Few-Layer Graphene Sheets by CF 4 Plasma Treatment

Experimental study of graphene synthesis by different gas-doped plasma

Selective Etching of Graphene Edges by Hydrogen Plasma

Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering

Graphene Modification Based on Plasma Technologies

Termination of Graphene Edges Created by Hydrogen and Deuterium Plasmas

Experimentally Engineering the Edge Termination of Graphene Nanoribbons

Electric imaging and dynamics of photo-charged graphene edge

Chemically-doped Graphene with Improved Surface Plasmon Characteristics: an Optical Near-Field Study

Influence of disordered edges on transport properties in graphene

Precise Control of Graphene Etching by Remote Hydrogen Plasma

Alkali doping of graphene: the crucial role of high temperature annealing

Activating Impurity Effect in Edge Nitrogen-Doped Chevron Graphene Nanoribbons