Abstract:Nitrogen-doping is well-known to be an effective and promising strategy to tune the electronic states and configurations of carbon materials for catalysis, energy conversion and storage. Since 2009, numerous investigations have demonstrated that the catalytic activity of the nitrogen-doped carbon materials can be improved with an increased doping concentration, yet, how to realize a high doping level remains a great challenge, and to what level remains an open and elusive question. Herein, we report an "in situ framework reconstruction of g-C 3 N 4 " that can provide a suitable and simple approach for Nitrogen-superdoping, where nitrogen vacancy formed at C-N=C site in the g-C 3 N 4 framework help to activate adjacent C atoms that are endowed with unpaired electrons dwelling, thus, to be more active. Importantly, both density functional theory analyses and experiments reveal that they are energetically favorable to bond with an ethene molecule, reconstructing a π-bonded dual nitrogen-doped hexagonal-C ring that further acts as building block of the as-formed graphene nanoribbons. Finally, the nitrogen-doping level and the configuration can be finely tuned in a wide range, and up to 33.8 at% of nitrogen is homogenously doped. With the Nitrogen-superdoped graphene nanoribbons as counter electrodes in dye-sensitized solar cells, which have have attracted wide attention due to their easy fabrication and relative high power conversion efficiency (PCE), a PCE of 8.60% is achieved. This present work represents a breakthrough in high-efficiency nitrogen-doping of carbon materials, and will fastly promote the chemistry, chemical engeering and material industry involved in carbon.

Activating Impurity Effect in Edge Nitrogen-Doped Chevron Graphene Nanoribbons

Effects Induced by Single and Multiple Dopants on the Transport Properties in Zigzag-Edged Graphene Nanoribbons

Modulation of N-bonding configurations and their influence on the electrical properties of nitrogen-doped graphene

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons

Introduction of Nitrogen with Controllable Configuration into Graphene Via Vacancies and Edges

Selective Nitrogen Doping in Graphene: Enhanced Catalytic Activity for the Oxygen Reduction Reaction

Nitrogen-Doped Graphene on Copper: Edge-Guided Doping Process and Doping-Induced Variation of Local Work Function

Pyridinic N doped graphene: synthesis, electronic structure, and electrocatalytic property

Atomic-scale Carbon Framework Reconstruction Enables Nitrogen-doping up to 33.8 at% in Graphene Nanoribbon

The synergistic effect of carbon edges and dopants towards efficient oxygen reduction reaction

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

A first-principles study on the electronic transport properties of symmetric B/N co-doped armchair graphene nanoribbons with H/O co-saturation

Ultrahigh Conductivity of Graphene Nanoribbons Doped with Ordered Nitrogen

Tuneable effects of pyrrolic N and pyridinic N on the enhanced field emission properties of nitrogen-doped graphene

Effects of graphitic- and pyridinic-N co-doping on structure regulation and ORR activity of N-doped graphene

Half-filled Energy Bands Induced Negative Differential Resistance in Nitrogen-Doped Graphene.

Activation of Graphenic Carbon due to Substitutional Doping by Nitrogen: Mechanistic Understanding from First-principles

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

Improving Electronic Transport of Zigzag Graphene Nanoribbons by Ordered Doping of B or N Atoms