Abstract:An efficient monolithically integrated light source with complementary metal-oxide-semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emitting diodes (RCLEDs) and vertical-cavity surface-emitting lasers (VCSELs), are strong contenders due to their compact size, circular emission profile with low beam divergence, wafer-scale fabrication compatibility, high bandwidth, and high coupling efficiency to fiber optic cables. We report the first demonstration of 8-in. wafer-scale GeSn/Ge multiple-quantum-well VCSE p-i-n structures and diodes for laser or light-emitting diode (LED) applications in Si photonics by wafer bonding and layer transfer techniques, which are challenging for all-epitaxy routes. The wafer could be 12 in. (300 mm) since the MQW gain medium is grown on a 300 mm Si wafer, and the bonding is wafer-scale. Alternative dielectric layers (SiO2/SiN/SiO2), introduced by wafer bonding, under the emitting structure, serve as the bottom mirror for the vertical cavity. The Ge0.92Sn0.08/Ge MQW layer is utilized to improve the material quality and to confine injected carriers. As a result, more than 8× enhancement of light emission due to the vertical cavity resonance was demonstrated by photoluminescence spectroscopy. Besides, the spectral purity is enhanced by the single-longitudinal-mode cavity. The intensity of light emission is insensitive to the temperature range from 4 to 300 K and even becomes stronger at higher temperatures since the stronger resonant cavity effect at higher temperatures compensates for the drop in light emission efficiency caused by nonradiative centers. The vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations. A positive gain can be achieved as indicated by optical gain calculations. Room-temperature electroluminescence and an excellent carrier injection efficiency of the MQW VCSE diode are observed, showing its potential for electrically injected RCLEDs and VCSELs.

Laterally-current-injected Light-Emitting Diodes Based on Nanocrystalline-Si/sio_2 Superlattice

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

A sub-wavelength Si LED integrated in a CMOS platform

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Field-effect electroluminescence in silicon nanocrystals

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

Development of Heterojunction c-Si/a-Si1-xCx:H PIN Light-Emitting Diodes

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Coplanar Metal–semiconductor–metal Light-Emitting Devices with an N++ InGaN Layer and Their Application to Display

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate