Flexible high-performance carbon nanotube integrated circuits

Dong-ming Sun,Marina Y. Timmermans,Ying Tian,Albert G. Nasibulin,Esko I. Kauppinen,Shigeru Kishimoto,Takashi Mizutani,Yutaka Ohno
DOI: https://doi.org/10.1038/NNANO.2011.1
IF: 38.3
2011-01-01
Nature Nanotechnology
Abstract:Carbon nanotube thin-film transistors 1 are expected to enable the fabrication of high-performance 2 , flexible 3 and transparent 4 devices using relatively simple techniques. However, as-grown nanotube networks usually contain both metallic and semiconducting nanotubes, which leads to a trade-off between charge-carrier mobility (which increases with greater metallic tube content) and on/off ratio (which decreases) 5 . Many approaches to separating metallic nanotubes from semiconducting nanotubes have been investigated 6 , 7 , 8 , 9 , 10 , 11 , but most lead to contamination and shortening of the nanotubes, thus reducing performance. Here, we report the fabrication of high-performance thin-film transistors and integrated circuits on flexible and transparent substrates using floating-catalyst chemical vapour deposition followed by a simple gas-phase filtration and transfer process. The resulting nanotube network has a well-controlled density and a unique morphology, consisting of long (~10 µm) nanotubes connected by low-resistance Y-shaped junctions. The transistors simultaneously demonstrate a mobility of 35 cm 2 V –1 s –1 and an on/off ratio of 6 × 10 6 . We also demonstrate flexible integrated circuits, including a 21-stage ring oscillator and master–slave delay flip-flops that are capable of sequential logic. Our fabrication procedure should prove to be scalable, for example, by using high-throughput printing techniques.
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