Abstract:Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each controlled by a single gate voltage. One-dimensional potentials are derived from a three-dimensional electrostatic model, and used to construct an effective Hamiltonian for efficient simulation. Control pulse sequences are designed by maintaining a fixed adiabaticity, so that different shuttling conditions can be systematically compared. We first use these tools to optimize the device geometry for maximum transport velocity, considering only orbital states and neglecting valley and spin degrees of freedom. Taking realistic geometrical constraints into account, charge shuttling speeds up to $\sim$300 m/s preserve adiabaticity. Coherent spin transport is simulated by including spin-orbit and valley terms in an effective Hamiltonian, shuttling one member of a singlet pair and tracking the entanglement fidelity. With realistic device and material parameters, shuttle speeds in the range 10-100 m/s with high spin entanglement fidelities are obtained when the tunneling energy exceeds the Zeeman energy. High fidelity also requires the inter-dot valley phase difference to be below a threshold determined by the ratio of tunneling and Zeeman energies, so that spin-valley-orbit mixing is weak. In this regime, we find that the primary source of infidelity is a coherent spin rotation that is correctable, in principle. The results pertain to proposals for large-scale spin qubit processors in isotopically purified silicon that rely on coherent shuttling of spins to rapidly distribute quantum information between computational nodes.

Quantum Coherence in a One-Electron Semiconductor Charge Qubit.

Circuit-QED based time-averaged dispersive readout of a semiconductor charge qubit

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Ju l 1 99 9 Ballistic Single-Electron Quputer

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Coherent Charge Oscillations in a Bilayer Graphene Double Quantum Dot

Tunable Hybrid Qubit in a GaAs Double Quantum Dot.

Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe

Enhanced Electron Spin Coherence in a GaAs Quantum Emitter

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Storing quantum information for 30 seconds in a nanoelectronic device

One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment

Observation of Quantum Fluctuations of Charge on a Quantum Dot

Dephasing in a crystal-phase defined double quantum dot charge qubit strongly coupled to a high-impedance resonator

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Raman Phonon Emission in a Driven Double Quantum Dot

Coherence of an Electronic Two-Level System under Continuous Charge Sensing by a Quantum Dot Detector

Microsecond-lived quantum states in a carbon-based circuit driven by cavity photons

Quantum decoherence dynamics of divacancy spins in silicon carbide

Simulated coherent electron shuttling in silicon quantum dots

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment