Abstract:Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level.-configuration model {vertical bar 0 >, vertical bar 1 >, vertical bar 2 >}, i.e., the ground state of the molecule is the lower level vertical bar 0 > and the highly degenerate electronic states in the two quantum dots are the two upper levels vertical bar 1 >, vertical bar 2 >. The electromagnetic characteristics due to the vertical bar 0 >-vertical bar 1 > transition can be controllably manipulated by a tunable gate voltage (control field) that drives the vertical bar 2 >-vertical bar 1 > transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., vertical bar 0 >-vertical bar 1 > two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.

Coherence of an Electronic Two-Level System under Continuous Charge Sensing by a Quantum Dot Detector

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Detector-induced Dephasing in Quantum-Dot Cellular Automata Qubit

Detector-induced Backaction on the Counting Statistics of a Double Quantum Dot.

Probing the Quantum Behavior of a Nanomechanical Resonator Coupled to a Double Quantum Dot

Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots

Detection of the relaxation rates of an interacting quantum dot by a capacitively coupled sensor dot

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Decoherence effects on weak value measurements in double quantum dots

Coherent Charge Oscillations in a Bilayer Graphene Double Quantum Dot

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Interacting Two-Level Systems as a Source of 1/f Charge Noise in Quantum Dot Qubits

Quantum Coherence in a One-Electron Semiconductor Charge Qubit.

Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Real-time detection and control of correlated charge tunneling in a quantum dot

Time-Resolved Detection of Individual Electrons in a Quantum Dot

Dephasing in an Aharonov-Bohm interferometer containing a lateral double quantum dot induced by coupling with a quantum dot charge sensor

First-order Coherent Resonant Tunneling Through an Interacting Coupled-Quantum-dot Interferometer: Generic Quantum Rate Equations and Current Noise

Observation of Quantum Fluctuations of Charge on a Quantum Dot

Improving Intrinsic Decoherence in Multi-Quantum-Dot Charge Qubits