Abstract:For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise.

Interacting Two-Level Systems as a Source of 1/f Charge Noise in Quantum Dot Qubits

Effects of Temperature Fluctuations on Charge Noise in Quantum Dot Qubits

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot

Open System Approach to Non-Equilibrium Dynamical Theory of Quantum Dot Systems

Finite-frequency noise, Fano factor, $ΔT$-noise and cross-correlations in double quantum dots

Characterization of individual charge fluctuators in Si/SiGe quantum dots

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Dephasing of Si spin qubits due to charge noise

Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot

FLUCTUATIONS IN INELASTIC TUNNELING OF ELECTRONS THROUGH SERIALLY COUPLED DOUBLE QUANTUM DOTS

Destructive Quantum Interference Phenomenon in Series-Coupled Double Quantum Dots

1/f noise in quantum nanoscience

Interacting two-level defects as sources of fluctuating high-frequency noise in superconducting circuits

First-order Coherent Resonant Tunneling Through an Interacting Coupled-Quantum-dot Interferometer: Generic Quantum Rate Equations and Current Noise

Charge and Flux Noise from Nonequilibrium Quasiparticle Energy Distributions in Superconducting Qubits and Resonators

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Transmission phase lapses in quantum dots: the role of dot-lead coupling asymmetry

Optimizing lateral quantum dot geometries for reduced exchange noise

Inelastic Cotunneling Current and Shot Noise of an Interacting Quantum Dot with Ferromagnetic Correlations

Quantum Transport in a Two-Level Quantum Dot Driven by Coherent and Stochastic Fields