High linearity photodiode array with monolithically integrated Wilkinson power combiner

Yang Fu,Huapu Pan,Zhi Li,Campbell, J.

DOI: https://doi.org/10.1109/MWP.2010.5664212

2010-01-01

Abstract:We demonstrate the first high linearity four-element photodiode array with monolithically integrated Wilkinson power combiner. A high third-order intercept point (OIP3) of 47 dBm is achieved at 20 GHz and 80 mA photocurrent level.

What problem does this paper attempt to address?

High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

Yang Fu,Huapu Pan,Chong Hu,Joe Campbell

DOI: https://doi.org/10.1109/photonics.2010.5698735

2010-01-01

Abstract:Photodiodes monolithically integrated with a Wilkinson power combiner have achieved over 50 dBm of third-order intercept point (OIP3) at 20 GHz and 64 mA photocurrent level.
Photodiodes with monolithically integrated wilkinson power combiner

Yang Fu,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1109/JQE.2009.2035058

2010-01-01

Abstract:We report improved output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner and stub tuner in the frequency range up to 20 GHz.
A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

zhiwei xu,qun jane gu,mauchung frank chang

DOI: https://doi.org/10.1109/RFIC.2011.5940619

2011-01-01

Abstract:We present a 101-117GHz power amplifier (PA) using two way current power combiner in 65nm bulk CMOS. It delivers up to 14.8dBm saturated output power with over 14dB power gain and better than 9.4% power added efficiency (PAE), which also achieves better than 11.6dBm output P1dB. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. To ensure the stability and improve efficiency, the PA first two stages adopt cascode structure and the last stage utilizes common source structure. A current power combiner is employed to combine the power from two separate PAs. The entire PA core occupies 0.106 mm2 chip area and dissipates about 200mW.
Input Signal Distribution Using Coupled Lambda/2 Standing-Wave Oscillators For Coherent Power Combining

Yingqian Huang,Xi Zi,Jinfang Zhou,Kangsheng Chen

2011-01-01

Abstract:One of the key challenges to realize a fully integrated transceiver using silicon based processes is the limited output power achievable, especially at millimeter-wave frequencies. Higher output power can be obtained by using various power combining schemes, which typically sum the output power of N identical amplifying stages coherently. Thus to ensure efficient power combining, the input signal must be distributed to all the amplifying stages on the chip with equi-phase and equi-magnitude. While Wilkinson power splitter has been employed for this purpose in the literatures, it becomes bulky and inefficient when N is large, which severely limits the number of outputs that can be combined.In this paper, a network of coupled lambda/2 standing-wave oscillators is employed to distribute the input signal. Proposed formerly for global clock distribution, theoretically, differential signals of equi-frequency, equi-phase, and equi-magnitude can be obtained by taping onto specific points in the network. It should be noted, however, that the network is especially suited for input signal distribution purpose here, since the specific power combining scheme assumes that a grid of N amplifying stages resides on the chip, which matches to the tap points in a perfect way.A 30 GHz prototype network comprised of four coupled lambda/2 standing-wave oscillators using TSMC 0.18 mu m CMOS process has been design. Post-layout simulation results are presented showing that no distinguishable difference in frequency, phase, and amplitude is observed for the multiple output differential signals. The chip has a total area (including pads) of 800 x 990 mu m(2) and has been submitted for fabrication.
Novel Millimeter-Wave Power Combining Utilizing Wafer Level Packaging Technology

Yingqian Huang,Xinyi Hu,Jinfang Zhou,Zhiguo Shi,Kangsheng Chen

2011-01-01

Abstract:It is extremely difficult to obtain high output power with silicon based processes, which presents one of the greatest challenges for realizing fully integrated transceivers, especially at millimeter-wave frequencies. For this reason, various power combining methods have been proposed to achieve higher power levels.In this paper, a novel power combining method suitable for millimeter-wave applications is presented. The power combining network is synthesized in package utilizing wafer level packaging technology, with an array of power sources of moderate output power capability assumed to be distributed on chip, which means applying further combining in addition to existing on-chip power combining scheme for potentially even higher output power is possible.The power combining network is composed of more basic power combining units, each consisting of one substrate integrated waveguide (SIW) resonator coupling four lambda/4 standing-wave resonators, which can be synthesized using two quarter-wavelength vertical vias with one end open and the other end shorted. For power combining purpose, the open end of each lambda/4 resonator is connected to the differential output of one on-chip power source, while the shorted end is realized using one of the two metal plates of the SIW resonator. The coupling between the SIW resonator and lambda/4 resonators is through slotting on the metal plate to allow magnetic leakage so that oscillation in lambda/4 resonators will excite the SIW resonator to oscillate. As the quality factor of the SIW resonator is much larger than those of lambda/4 resonators, energy is mainly confined in the cavity of the SIW resonator so that power combing is achieved.Example design for 60 GHz application is detailed in the paper with simulation results using commercial CST software showing the effectiveness of the power combining method.
High-Power Monolithically Integrated Traveling Wave Photodiode Array

Andreas Beling,Hao Chen,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2009.2033817

IF: 2.6

2009-01-01

IEEE Photonics Technology Letters

Abstract:A novel traveling wave photodiode array (TWPDA) based on back-illuminated InGaAs-InP charge compensated modified uni-traveling carrier photodiodes is demonstrated. A two-element TWPDA with integrated termination resistor has a responsivity of 0.55 A/W and bandwidth of 17 GHz. The saturation photocurrent and the available electrical output power are 114 mA and + 13 dBm at - 3.5-V bias voltage, resp...
High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1364/ipnra.2008.iwc3

2008-01-01

Abstract:We demonstrate a modified uni-traveling carrier photodiode (MUTC-PD) with a record-high third-order intercept point of 52dBm at 75mA and 300MHz. To further enhance the dynamic range we propose a monolithically integrated traveling wave MUTC-PD array.
1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission

Xiaowei Yang,Weifang Yuan,Xiaofeng Duan,Xianjie Li,Kai Liu,Yongqing Huang

DOI: https://doi.org/10.1109/jqe.2024.3374126

IF: 2.5

2024-04-03

IEEE Journal of Quantum Electronics

Abstract:Toward the application of 400 G optical receiver chips in optical communication systems, this paper presents a photodetector (PD) array with a monolithic integrated InP microlenses structure. The absorption layer of the PD array in question includes the non-depleted, partially depleted, and depleted regions. This third-order composite absorber layer accelerates the diffusion of electrons in the absorber layer and balances the transport times of holes and electrons. Therefore, the high-speed and high responsivity characteristics of the device can be realized. The integration of InP microlenses on the backside of the PD allows the effective photosensitive surface area to be increased and the incident light alignment deviation to be compensated. Tests yielded a 3-dB bandwidth of the PD array at 1310 nm greater than 40 GHz, with a peak responsivity of 0.64 A/W. The responsivity of two types of PDs was measured when incident at a distance of away from the main optical axis. The responsivity of the integrated microlenses decreased to 67.05% of the maximum value. Compared to the device without integrated microlenses, the responsivity increased by 66.76%.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
High-Linearity Modified Uni-Traveling Carrier Photodiodes

Huapu Pan,Yang Fu,Zhi Li,Joe C. Campbell

DOI: https://doi.org/10.1364/ofc.2010.own1

2010-01-01

Abstract:We report novel InGaAs/InP modified uni-traveling carrier photodiodes with record linearity. At low frequencies the third-order output intercept point (OIP3) is 55 dBm and remains as high as 47.5 dBm at 20 GHz. (C) 2010 Optical Society of America
Terahertz power enhancement by combining photocurrent from arrayed UTC-PDs using Wilkinson power combiner

Yoshiki Kamiura,Hussein Ssali,Ryo Doi,Hiroki Agemori,Ming Che,Yuya Mikami,Kazutoshi KATO

DOI: https://doi.org/10.35848/1347-4065/ad37c4

IF: 1.5

2024-03-26

Japanese Journal of Applied Physics

Abstract:Abstract We designed a novel terahertz wave power combiner which combines high-frequency currents from each photomixer in a micro strip line. The generator is composed of four uni-travelling carrier photodiodes (UTC-PDs) as the photomixers, a 4 × 1 Wilkinson power combiner and a microstrip rectangular patch antenna on a Silicon Carbide (SiC) substrate in which photocurrents of 300 GHz from the UTC-PDs are combined to be fed to the antenna. Experimental results show that the output power is multiplied by 11 dB (approximately 13 times) compared to that of a single UTC-PD. The combined power increases super-linearly with the number of the photomixers, confirms a great advantage of photomixing as a current source.

physics, applied
A Reconfigurable Microwave Photonic Channelized Receiver Based on Dense Wavelength Division Multiplexing Using an Optical Comb

Ze Li,Xianmin Zhang,Hao Chi,Shilie Zheng,Xiaofeng Jin,Jianping Yao

DOI: https://doi.org/10.1016/j.optcom.2012.01.023

IF: 2.4

2012-01-01

Optics Communications

Abstract:A photonic approach to implementing a microwave channelized receiver based on dense wavelength division multiplexing using an optical comb is proposed. In the approach, a flat optical comb with 11 comb lines is generated using two cascaded Mach-Zehnder modulators. Frequency analysis of a microwave signal with multiple-frequency components is realized by using the optical comb together with an optical etalon with a periodic transfer function, a wavelength division multiplexer (WDM) and a photodetector array. The system is investigated numerically. Frequency measurement of a multi-frequency signal with a measurement range from 0.5-11.5 with an accuracy of ±0.5GHz is achieved. The reconfigurability of the system realized by tuning the comb-line spacing and the peak positions of the etalon is also evaluated. The improvement of the dynamic range of the system using an optimized periodic filter is also discussed.
A 1 V, 69-73 GHz CMOS Power Amplifier Based on Improved Wilkinson Power Combiner.

Haikun Jia,Baoyong Chi,Lixue Kuang,Zhihua Wang

DOI: https://doi.org/10.1016/j.mejo.2012.02.003

2012-01-01

Abstract:A 1V, 69–73GHz CMOS power amplifier based on improved Wilkinson power combiner is presented. Compared with the traditional one, the proposed Wilkinson power combiner could lower down the insertion loss and reduce the die area by eliminating the quarter-wavelength transmission lines while preserving the characteristics of Wilkinson power combining and good port isolation. The presented power amplifier has been implemented in 65nm CMOS process and achieves a measured saturated output power of 10.61dBm and a peak power added efficiency of 8.13% at 73GHz with only 1V power supply. The die area including pads is 1.23×0.45mm2, while the power combiner only occupies 200×80μm2.
Design of Novel Photodetector Array in Optical Communication Systems and Optimization of Signal Processing Algorithm

Conglin Ran

DOI: https://doi.org/10.1166/jno.2024.3564

2024-02-01

Journal of Nanoelectronics and Optoelectronics

Abstract:This study aims to enhance the high-speed and high-power performance of photodetectors, focusing on the epitaxial layer structure of photodetector arrays. The epitaxial structure of the photodetector involves a P–I–N structure with InAlAs/InGaAs heterostructures. InAlAs is used as the P-region material, and a dual-waveguide photodetector array is designed with a core diameter of 20 μ m. The optical coupling is achieved through normal incident vertical illumination. Additionally, a novel structure of a dual-core symmetrically connected photodetector array is proposed, altering the electrode structure and core arrangement to maintain consistent distances for the output signals from the cores to the device’s output terminal. In order to address the issue of minimum bit error rate in optical communication systems under conditions of optical noise and limited energy efficiency of received optical signals, a photodetector array signal processing algorithm is proposed. The experimentally designed dual-core symmetrically connected P–I–N photodetector array achieves a 3 dB bandwidth of 15.37 GHz at an average photocurrent of 5 mA. Furthermore, it maintains a 3 dB bandwidth of 11.67 GHz at a high-power operating state of 50 mA, with an alternating current (AC) saturation current of 56 mA and a saturated RF output power of 1.11 dBm at 11.67 GHz. In comparison, the improved dual-core traveling-wave photodetector array at 11.67 GHz only achieves an AC saturation current of 38 mA and a saturated RF output power of 2.66 dBm. The signal processing algorithm for the selected dual-core symmetrically connected P–I–N photodetector array demonstrates that employing a method of merging array elements reduces the system’s computational complexity with minimal impact on the system’s power consumption.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

Zhi Li,Yang Fu,Molly Piels,Huapu Pan,Andreas Beling,John E Bowers,Joe C Campbell

DOI: https://doi.org/10.1364/OE.19.00B385

IF: 3.8

2011-01-01

Optics Express

Abstract:We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias. (C)2011 Optical Society of America
High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode.

Zhilei Fu,Hui Yu,Qiang Zhang,Xiaofei Wang,Penghui Xia,Jianyi Yang

DOI: https://doi.org/10.1364/OL.44.005582

IF: 3.6

2019-01-01

Optics Letters

Abstract:We demonstrate a four-stage silicon distributed traveling-wave photodetector (TWPD) whose input terminal is open-circuit so as to enhance the radio-frequency (RF) output power. In order to mitigate the bandwidth drop caused by the RF reflection at the open input terminal, photodetector (PD) units are aperiodically loaded on the TW electrode. With the aid of an equivalent circuit model, we optimize spacings between PD units and then improve the 3 dB bandwidth from 7 to 10 GHz. A good agreement between measurement and modeling is obtained. Thanks to the cancellation of the input termination impedance, maximum RF output powers of the device are 10.2 and 6.5 dBm at 5 and 10 GHz, respectively. The corresponding power conversion efficiencies are 7.0% and 3.2%. (C) 2019 Optical Society of America
Optoelectronic mixer based on high power modified uni-traveling-carrier photodiode

Zhi Li,Huapu Pan,Yang Fu,Campbell, J.C.

DOI: https://doi.org/10.1109/MWP.2010.5664239

2010-01-01

Abstract:We demonstrate for the first time an optoelectronic mixer with an up-converted power > 0 dBm. A high up-converted power of 0.7 dBm has been achieved with a low conversion loss of -3.2 dB at 60 GHz.
A 1.55-Μm Laser Array Monolithically Integrated with an MMI Combiner

Ma Li,Zhu Hongliang,Liang Song,Wang Baojun,Zhang Can,Zhao Lingjuan,Bian Jing,Chen Minghua

DOI: https://doi.org/10.1088/1674-4926/34/4/044007

2013-01-01

Journal of Semiconductors

Abstract:The monolithic integration of four 1.55-μm range InGaAsP/InP distributed feedback lasers with a 4 × 1 multimode-interference (MMI) optical combiner using the varied width ridge method is proposed and demonstrated. The average output power is 1.5 mW when the current of LD is 100 mA and the threshold current is 30–35 mA at 25 °C. The lasing wavelength is 1.55-μm range and 40 dB sidemode suppression ratio is obtained. The four channels can operate separately or simultaneously.
High-Power Integrated Balanced Photodetector

Zhi Li,Hao Chen,Huapu Pan,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2009.2034128

2009-01-01

Abstract:We report a high-power balanced photodetector with 0.82-A/W responsivity and saturation current of 136 mA (10??C ) per photodiode at 11 GHz. The common mode rejection ratio is >35 dB up to 15 GHz.
High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used As V-Band Optoelectronic Mixers

Huapu Pan,Zhi Li,Joe C. Campbell

DOI: https://doi.org/10.1109/jlt.2010.2043215

2010-01-01

Abstract:A modified uni-traveling-carrier photodiode-based V-band optoelectronic mixer is demonstrated. The relative optical local oscillator (LO) and optical intermediate frequency (IF) signal levels and the reverse bias can be optimized for maximum up-converted power. It was found that the optimum optical IF percentage relative to the total incident optical power was approximately 1/3 for all photocurrent levels while the optimum reverse bias increased linearly with photocurrent. A simple analytical model that explains these observations is developed. A high up-converted power of -4.7 dBm was achieved at 60 GHz and photocurrent of 70 mA. The maximum up-converted power is primarily limited by the saturation characteristic of the photodiode.
InGaAsP/InP DFB Laser Array Monolithically Integrated with MMI Combiner and SOA

Li Ma,Hongliang Zhu,Minghua Chen,Can Zhang,Baojun Wang

DOI: https://doi.org/10.1117/12.999645

2012-01-01

Abstract:The monolithic integrated of four channel 1.55- μm range InGaAsP/InP distributed feedback lasers with a 4 × 1 multimode interference (MMI) optical combiner and semiconductor optical amplifier (SOA) using varied width ridge method, butt-joint technique and holographic exposure is proposed and demonstrated. The average output power and the threshold current are 1.8mW and 35mA, respectively, when the injection current of SOA is 100mA, with over 40-dB side mode suppression ratio (SMSR). The lasing wavelength is 1.55-μm range and 40dB sidemode suppression ratio (SMSR) is obtained. The four channels can operated separately or simultaneously.

High linearity photodiode array with monolithically integrated Wilkinson power combiner

High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

Photodiodes with monolithically integrated wilkinson power combiner

A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

Input Signal Distribution Using Coupled Lambda/2 Standing-Wave Oscillators For Coherent Power Combining

Novel Millimeter-Wave Power Combining Utilizing Wafer Level Packaging Technology

High-Power Monolithically Integrated Traveling Wave Photodiode Array

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission

High-Linearity Modified Uni-Traveling Carrier Photodiodes

Terahertz power enhancement by combining photocurrent from arrayed UTC-PDs using Wilkinson power combiner

A Reconfigurable Microwave Photonic Channelized Receiver Based on Dense Wavelength Division Multiplexing Using an Optical Comb

A 1 V, 69-73 GHz CMOS Power Amplifier Based on Improved Wilkinson Power Combiner.

Design of Novel Photodetector Array in Optical Communication Systems and Optimization of Signal Processing Algorithm

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode.

Optoelectronic mixer based on high power modified uni-traveling-carrier photodiode

A 1.55-Μm Laser Array Monolithically Integrated with an MMI Combiner

High-Power Integrated Balanced Photodetector

High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used As V-Band Optoelectronic Mixers

InGaAsP/InP DFB Laser Array Monolithically Integrated with MMI Combiner and SOA