High-Power Integrated Balanced Photodetector

Zhi Li,Hao Chen,Huapu Pan,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2009.2034128

2009-01-01

Abstract:We report a high-power balanced photodetector with 0.82-A/W responsivity and saturation current of 136 mA (10??C ) per photodiode at 11 GHz. The common mode rejection ratio is >35 dB up to 15 GHz.

What problem does this paper attempt to address?

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

Zhujun Wei,Hui Yu,Zhilei Fu,Penghui Xia,Qiang Zhang,Nannan Ning,Qikai Huang,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1364/oe.476218

IF: 3.8

2022-01-01

Optics Express

Abstract:We demonstrate Ge/Si high-power and high-speed distributed traveling wave photodetectors (TWPD) by using the inductive gain peaking technique. Input terminals of TW electrodes are open to enhance RF output efficiencies to output loads. Furthermore, optimized on-chip spiral inductors are incorporated at output terminals of TW electrodes to alleviate bandwidth degradations caused by the absences of matching impedances. A comprehensive equivalent circuit model is developed to calculate the frequency response of this scheme. It is used to optimize the design, and then is validated by measurement results. After inducing on-chip inductors, the bandwidths of 4-stage and 8-stage TWPDs are improved from 32 to 44 GHz and 16 to 24 GHz, respectively. Maximum RF output powers of 4-stage and 8-stage TWPDs with on-chip inductors are measured to be 5.7 dBm and 9.4 dBm at 20 GHz, respectively.
High-Power Monolithically Integrated Traveling Wave Photodiode Array

Andreas Beling,Hao Chen,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2009.2033817

IF: 2.6

2009-01-01

IEEE Photonics Technology Letters

Abstract:A novel traveling wave photodiode array (TWPDA) based on back-illuminated InGaAs-InP charge compensated modified uni-traveling carrier photodiodes is demonstrated. A two-element TWPDA with integrated termination resistor has a responsivity of 0.55 A/W and bandwidth of 17 GHz. The saturation photocurrent and the available electrical output power are 114 mA and + 13 dBm at - 3.5-V bias voltage, resp...
High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode.

Zhilei Fu,Hui Yu,Qiang Zhang,Xiaofei Wang,Penghui Xia,Jianyi Yang

DOI: https://doi.org/10.1364/OL.44.005582

IF: 3.6

2019-01-01

Optics Letters

Abstract:We demonstrate a four-stage silicon distributed traveling-wave photodetector (TWPD) whose input terminal is open-circuit so as to enhance the radio-frequency (RF) output power. In order to mitigate the bandwidth drop caused by the RF reflection at the open input terminal, photodetector (PD) units are aperiodically loaded on the TW electrode. With the aid of an equivalent circuit model, we optimize spacings between PD units and then improve the 3 dB bandwidth from 7 to 10 GHz. A good agreement between measurement and modeling is obtained. Thanks to the cancellation of the input termination impedance, maximum RF output powers of the device are 10.2 and 6.5 dBm at 5 and 10 GHz, respectively. The corresponding power conversion efficiencies are 7.0% and 3.2%. (C) 2019 Optical Society of America
High-Power Ge/Si Waveguide Photodetector

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Zejie Yu,Liu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.4c00173

IF: 7

2024-01-01

ACS Photonics

Abstract:A lateral germanium/silicon waveguide photodetector with a side-coupling structure is proposed and realized. For the present photodetector, the input light is split into four channels, which are gradually coupled into two parallel germanium waveguides by adiabatic side-coupling. In this way, uniform optical field distribution is achieved and the space-charge effect is eliminated greatly even with high optical power. The experimental results show that the responsivity is still as high as 0.68 A/W even for an input optical power of 28 mW and the saturation photocurrent is more than 19.5 mA. The present photodetector features a broad bandwidth of >40 GHz for detecting low optical power, while the bandwidth is still more than 20 GHz for the input optical power of 12.4 mW (the output current is 10.2 mA). The open eye-diagrams for receiving the 25 and 50 Gbps data are demonstrated with the photocurrents of 16 and 8.5 mA, respectively. The present side-coupling Ge/Si photodetector exhibits excellent performances for high-power detection compared with the conventional one.
High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

Zhi Li,Yang Fu,Molly Piels,Huapu Pan,Andreas Beling,John E Bowers,Joe C Campbell

DOI: https://doi.org/10.1364/OE.19.00B385

IF: 3.8

2011-01-01

Optics Express

Abstract:We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias. (C)2011 Optical Society of America
High-CMRR Balanced Detection Module Based on Complementary Photodetectors

Yugao Tang,Bing Xiong,Zhaozhu Li,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1364/acpc.2021.t4a.196

2021-01-01

Abstract:A balanced photodetector module combined with two complementary photodetectors is proposed and demonstrated. Key factors influencing common-mode rejection ratio are analyzed, and excellent response consistency with CMRR over 30 dB are obtained in DC-18 GHz.
High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

Yang Fu,Huapu Pan,Chong Hu,Joe Campbell

DOI: https://doi.org/10.1109/photonics.2010.5698735

2010-01-01

Abstract:Photodiodes monolithically integrated with a Wilkinson power combiner have achieved over 50 dBm of third-order intercept point (OIP3) at 20 GHz and 64 mA photocurrent level.
A Fully-Integrated Optoelectronic Detector with High Gain Bandwidth Product.

Ze-Kun Zhou,Yun-Kun Wang,Hong-Guo Gong,Yue Shi,Zhuo Wang,Bo Zhang

DOI: https://doi.org/10.1109/access.2019.2912639

IF: 3.9

2019-01-01

IEEE Access

Abstract:An optoelectronic circuit integrated with a photodiode is proposed, which simultaneously achieves 3.5-MΩ transimpedance gain and 18-MHz bandwidth. The design is intended to address the limits on bandwidth introduced by the large parasitic capacitance of the integrated photodiodes in optoelectronic applications. The proposed circuit consists of a transimpedance amplifier (TIA) and a voltage gain stage. The pre-stage TIA with low input impedance provides the main transimpedance gain of the circuit over a wide bandwidth. The post voltage gain stage provides the supplemental voltage gain for the circuit and increases its driving capability. The circuit is fabricated in a 0.5-μm CMOS process with an active area of 501.2 μm × 291.6 μm. When the light input is a 100-ns pulse with 905-nm wavelength and 1.5-μW optical power, the amplitude of output signal is 1.6 V with a rise time of 24.5 ns and a delay time of 21 ns.
Highly Efficient 1D P-Te/2d N-Bi 2 Te 3 Heterojunction Self-Driven Broadband Photodetector

Chenchen Zhao,Dongbo Wang,Jiamu Cao,Zhi Zeng,Bingke Zhang,Jingwen Pan,Donghao Liu,Sihang Liu,Shujie Jiao,Tianyuan Chen,Gang Liu,Xuan Fang,Liancheng Zhao,Jinzhong Wang

DOI: https://doi.org/10.1007/s12274-023-5905-6

IF: 9.9

2024-01-01

Nano Research

Abstract:Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain. However, high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes, environmental toxicity, high production costs of traditional 3D semiconductor materials and sharply raised contact resistance, severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction. Here, 1D p-Te/2D n-Bi2Te3 heterojunctions are constructed by the simple and low-cost hydrothermal method. 1D p-Te/2D n-Bi2Te3 devices are applied in photoelectrochemical (PEC) photodetectors, with their high performance attributed to the good interfacial contacts reducing interface recombination. The device demonstrated a broad wavelength range (365–850 nm) with an/ph//dark as high as 377.45. The RiD*, and external quantum efficiency (EQE) values of the device were as high as 12.07 mA/W, 5.87 × 1010 Jones, and 41.05
Highly Sensitive and Broadband Organic Photodetectors with Fast Speed Gain and Large Linear Dynamic Range at Low Forward Bias

Riming Nie,Xianyu Deng,Lei Feng,Guiguang Hu,Yangyang Wang,Gang Yu,Jianbin Xu

DOI: https://doi.org/10.1002/smll.201603260

IF: 13.3

Small

Abstract:Photodetectors with high photoelectronic gain generally require a high negative working voltage and a very low environment temperature. They also exhibit low response speed and narrow linear dynamic range (LDR). Here, an organic photodiode is demonstrated, which shows a large amount of photon to electron multiplication at room temperature with highest external quantum efficiency (EQE) from ultraviolet (UV) to near-infrared region of 5.02 × 103 % (29.55 A W-1 ) under a very low positive voltage of 1.0 V, accompanied with a fast response speed and a high LDR from 10-7 to 101 mW cm-2 . At a relatively high positive bias of 10 V, the EQE is up to 1.59 × 105 % (936.05 A W-1 ). Inversely, no gain is found at negative bias. The gain behavior is exactly similar to a bipolar phototransistor, which is attributed to the photoinduced release of accumulated carriers. The devices at a low voltage exhibit a normalized detectivity (D*) over 1014 Jones by actual measurements, which is about two or three order of magnitudes higher than that of the highest existing photodetectors. These pave a new way for realization of high sensitive detectors with fast response toward the single photon detection.
High-Speed Photodetector With Simultaneous Electrical Power Generation

Luyu Wang,Zhiyang Xie,Beibei Pan,Zhiqi Zhou,Linze Li,Xinbo Zou,Haiming Ji,Baile Chen

DOI: https://doi.org/10.1109/jlt.2022.3216839

IF: 4.7

2023-01-15

Journal of Lightwave Technology

Abstract:We demonstrate a novel 850 nm high-speed photodetector for simultaneous high-speed data acquisition and electrical power generation from the optical signal. The device is based on GaAsAlGaAs modified uni-traveling carrier photodetector (MUTC-PD). Compared with the traditional p-i-n photodetector with the same absorber thickness, the MUTC device sustains a high 3 dB bandwidth of 11.9 GHz and a power conversion efficiency of 38.5 under a forward bias of 0.7 V. This outstanding performance is achieved by first adopting the MUTC structure on LPC devices. The device is expected to have applications for simultaneous lightwave information and power transfer. Our approach extends the high-speed detection to the forward bias region and may provide a potential solution for next-generation combined power and data transceiver modules.

engineering, electrical & electronic,optics,telecommunications
Photothermal-assist enhanced high-performance self-powered photodetector with bioinspired temperature-autoregulation by passive radiative balance

Junlong Tian,Lulu Chen,Ruyi Qiao,Kai Xiong,Wang Zhang,Yuliang Mao,Hongxing Li,Jiabin Li

DOI: https://doi.org/10.1016/j.nanoen.2020.105435

IF: 17.6

2021-01-01

Nano Energy

Abstract:High broadband absorption with low angular dependence is one of the key factors for photoelectronic applications. Photo-heating accelerating carrier transfer, inducing a change in electrical conductance and exciting “hot” electrons promotes a photoelectric response and extends the response photon energies well below the semiconductor band edge. A photodetector requires cooling to prevent overheating and reduce thermal noise, thereby improving photoelectric detection. Here, these distinct, independent functions, especially the conflicting functions between photo-heating and cooling, are combined into the same structure for the first time. We present an innovative approach using a layered MoS2/nonlayered CdS/Au hybrid heterostructure integrated into a bioinspired sophisticated micro/nanoarchitecture with omnidirectional light-harvesting, effective photothermal conversion and temperature auto-regulation nature to design a self-powered room-temperature photodetector for low angle-dependence and photothermal-assisted broadband photoelectric detection without active cooling. In nearly active areas with a square micron scale, our photodetector attains a responsivity up to 132.06, 122.46 and 74.44 mA/W under an illumination of 660, 808 and 980 nm, respectively, operated under a low bias (0.5 V), which shows a significant advantage over the reported high-performance MoS2 heterostructure photodetectors. Our work shows the concept that photo-heating can be used to enhance photoelectric detection by passive radiative balance. Thus, this work offers a new way to design a novel broadband room-temperature optoelectronic detector that outperforms conventional photodetectors, enabling new technological capabilities.
High-power Modified Uni-Traveling Carrier Photodiode with &#x226b; 50 Dbm Third Order Intercept Point

Andréas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/mwsym.2008.4633212

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
Ultra-Sensitive Narrow-Band P-Si Schottky Photodetector with Good Wavelength Selectivity and Low Driving Voltage

Huan-Huan Zuo,Yi-Fei Wang,Shao-Jian Long,Yan Pan,Xiao-Ping Yang,Chun-Yan Wu,Yan Wang,Lin-Bao Luo,Li Wang

DOI: https://doi.org/10.1109/led.2023.3331048

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:Narrowband photodetectors have attracted considerable attention owing to their ability to suppress interference from nontarget wavelengths. However, operation of sensitive narrowband detection usually requires a high driving voltage, which leads to high power consumption and severe degradation of device performance. In this study, a narrowband 1050 nm photodetector with high sensitivity and excellent wavelength selectivity was realized using a simple p -type Si Schottky junction. The device exhibited a high responsivity of 810 mA/W and a large linear dynamic range of 128 dB at zero bias. At a low bias voltage of -3 V, its external quantum efficiency increased to 6.9 x 10(3) %, with a full width at half maximum of approximately 74 nm. This outstanding device performance can be ascribed to the unique geometry of dual Ti /Ag Schottky electrode and the gain mechanism derived from the large transit-time difference between the photogenerated electrons and holes. This study opens new avenues for the development of highly sensitive narrowband photodetectors with low driving voltages in the future.
High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1364/ipnra.2008.iwc3

2008-01-01

Abstract:We demonstrate a modified uni-traveling carrier photodiode (MUTC-PD) with a record-high third-order intercept point of 52dBm at 75mA and 300MHz. To further enhance the dynamic range we propose a monolithically integrated traveling wave MUTC-PD array.
Frequency Response Modeling and Saturation Power Improvement of Lateral-PIN Germanium Photodetectors

Xuezhe Zheng,Ning Cheng,Yanlong Yin,Min Teng,Hao Wu

2024-03-24

Abstract:A frequency response model is developed for Germanium photodetector under large input optical powers. The model agrees well with the measurement results. Furthermore, a simple approach using parallel photodetection is demonstrated with ≥3-dBm saturation power.

Physics,Computer Science,Engineering
190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/ofc.2023.w1a.4

2023-01-01

Abstract:Back-illuminated modified uni-traveling carrier photodiodes with improved saturation performance at ultra-high frequencies are developed. The 4-µm-diameter PD exhibits a 3-dB bandwidth of 190 GHz with a saturation power of ‐1.21 dBm@190 GHz.
High-Speed 850 nm Photodetector for Zero-Bias Operation

Zhiyang Xie,Zhiqi Zhou,Linze Li,Zhuo Deng,Haiming Ji,Baile Chen

DOI: https://doi.org/10.1109/jstqe.2021.3095470

IF: 4.9

2022-03-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:High-speed photodetector operating at 850 nm wavelength with a large diameter and high quantum efficiency is desirable to meet the growing demands of short-reach optical links for high-performance computing systems. Zero-bias operation of the high-speed photodetectors can reduce power consumption, minimize system complexity of the optical transceivers and reduce the radiation damage in a harsh environment. Traditional p-i-n photodetectors for 850 nm applications often require a high reverse bias to accelerate the carrier transport for high-speed data transmission. In this work, we demonstrate a high-speed and low dark current modified uni-traveling-carrier photodiode based on GaAsAlGaAs at 850 nm wavelength operating under zero bias with a quantum efficiency of 73. The 3-dB bandwidth of the 20 m and 40 m diameter devices is 22.5 GHz and 13.3 GHz, respectively. A clear eye pattern is demonstrated at a 25.8 Gbits data rate for the device under zero-bias operation. To the best of our knowledge, this photodetector demonstrates the highest 3-dB bandwidth among all the zero-bias 850 nm photodetectors reported to date.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Yan Liang,Wenguang Zhou,Xiangyu Zhang,Faran Chang,Nong Li,Yifan Shan,Ye Zhang,Fan Ye,Chuanbo Li,Xiangbin Su,Chengao Yang,Hongyue Hao,Guowei Wang,Dongwei Jiang,Donghai Wu,Haiqiao Ni,Yingqiang Xu,Zhichuan Niu,Youdou Zheng,Yi Shi

DOI: https://doi.org/10.1063/5.0223557

IF: 4

2024-01-01

Applied Physics Letters

Abstract:High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga-0.51 As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of similar to 2.1 mu m and similar to 2.6 mu m, respectively. At a bias voltage of -100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 mu m, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 x 10(10 )cmHz(1/2)/W (at a peak responsivity of 2.1 mu m) under -100 mV applied bias at 300 K.
Bi-Functional High-Speed and Ultrabroad Bandwidth Detector

Xiaohong Li,Peng Bai,Siheng Huang,Wenjun Song,Xinran Lian,Cheng Hu,Zhiwen Shi,Wenzhong Shen,Zhanglong Fu,Dixiang Shao,Zhiyong Tan,Juncheng Cao,Cheng Tan,Gangyi Xu,Yueheng Zhang

DOI: https://doi.org/10.1021/acsphotonics.3c00513

IF: 7

2023-07-25

ACS Photonics

Abstract:Ultra-broadband detection and imaging devices with high speed, high bandwidth, and high sensitivity are in great demand for a variety of technological applications. An ultra-broadband high-speed device is realized based on a p-GaAs homojunction interfacial work function internal photoemission detector-photodiode device (HIWIP-photodiode). The ultrabroad dual-band response from terahertz (THz) to short-wavelength-infrared (SWIR) (4.2–150 THz) and visible/near-infrared (VIS/NIR) (330–450 THz) regions is realized by intentionally constructing two kinds of contact structures as well as utilizing various absorption mechanisms simultaneously. In addition, the HIWIP-photodiode could be used as a high-resolution ultra-broadband pixelless imaging device for THz to SWIR regions. The pixelless imaging of the mid-infrared spot is further demonstrated. These unique characteristics of an ultrabroad response range, bi-functional operating mode, mature growth/fabrication process, and high-speed response make the HIWIP-photodiode a strong contender for miniaturized and monolithic optoelectronic systems, paving the way for application of the interfacial work function internal photoemission (IWIP)-photodiode, which provides an alternative strategy for photon-type ultra-broadband detection.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology

High-Power Integrated Balanced Photodetector

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

High-Power Monolithically Integrated Traveling Wave Photodiode Array

High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode.

High-Power Ge/Si Waveguide Photodetector

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

High-CMRR Balanced Detection Module Based on Complementary Photodetectors

High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

A Fully-Integrated Optoelectronic Detector with High Gain Bandwidth Product.

Highly Efficient 1D P-Te/2d N-Bi 2 Te 3 Heterojunction Self-Driven Broadband Photodetector

Highly Sensitive and Broadband Organic Photodetectors with Fast Speed Gain and Large Linear Dynamic Range at Low Forward Bias

High-Speed Photodetector With Simultaneous Electrical Power Generation

Photothermal-assist enhanced high-performance self-powered photodetector with bioinspired temperature-autoregulation by passive radiative balance

High-power Modified Uni-Traveling Carrier Photodiode with &amp;#x226b; 50 Dbm Third Order Intercept Point

Ultra-Sensitive Narrow-Band P-Si Schottky Photodetector with Good Wavelength Selectivity and Low Driving Voltage

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

Frequency Response Modeling and Saturation Power Improvement of Lateral-PIN Germanium Photodetectors

190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

High-Speed 850 nm Photodetector for Zero-Bias Operation

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Bi-Functional High-Speed and Ultrabroad Bandwidth Detector

High-power Modified Uni-Traveling Carrier Photodiode with ≫ 50 Dbm Third Order Intercept Point