Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Quantification of the Zinc Dopant Concentration in GaAs Nanowires

Quantitative dopant distributions in GaAs nanowires using atom probe tomography.

Atomic-scale Imaging of Dopant Atoms in Si-doped GaN

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Zn-dopant dependent defect evolution in GaN nanowires

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Continuous wave CO2 laser induced diffusion of Zn into GaAs using a solid state diffusion source

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Spontaneous Ga Incorporation in Zno Nanowires Epitaxially Grown on Gan Substrate

Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design

Doping of Self-Catalyzed Nanowires under the Influence of Droplets.

Probing the Surface Effect on Deep-Level Emissions of an Individual ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage

Quantitative Study of GaAs Nanowires Catalyzed by Au Film of Different Thicknesses

Cathodoluminescence Visualisation of Local Thickness Variations of GaAs/AlGaAs Quantum-Well Tubes on Nanowires

Structural and Optical Properties of Be-doped High-Quality Self-Catalyzed GaAs Nanowires

Enhanced thermoelectric figure of merit in thin GaAs nanowires.

Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

Precursor Flow Rate Manipulation for the Controlled Fabrication of Twin-Free GaAs Nanowires on Silicon Substrates