Abstract:Programmable active bandpass filters (BPFs) have been designed in a chip-scale heterogeneous integration technology, which intimately integrates InP HBTs on a deep scaled CMOS technology. Therefore, the active BPF can leverage both high performance of InP HBT and high density and programmability of CMOS. Two BPF prototypes, consisting of a programmable gain amplifier (PGA), a fifth- or third-order BPF core, and a buffer, have been designed and fabricated. The BPF center frequency can be switched from 0.8 to 2.2 GHz with 150-MHz passband and delivers > 55-dB out-of-band (OOB) rejection for the fifth-order one. Four gain steps: 0, 6, 12, and 16 dB, are enabled by the front PGA to trade off noise and linearity performances. Due to the > 300-GHz f T of InP HBTs, the BPF cores can leverage active-RC architecture for high linearity owing to the close-loop implementation. The fifth-order BPF prototype occupies a 1.5 × 1.02 mm2 area together with pads and draws 106/121 mA from a 3.3-V power supply for 0.8/2.2-GHz bands, respectively, which demonstrates OOB output third-order intercept points (OIP3s) of 22.69/21.25 dBm for 0.8/2.2-GHz bands at the high gain mode. The measurement results suggest the fifth-order BPF core achieves 36.69/35.25-dBm OOB OIP3s. In addition, the designed third-order programmable BPF has been successfully used as a technology yield vehicle to assist the BiCMOS technology development.

High-Frequency Bipolar-Transistor on Simox

Very High Speed Poly-Si Emitter Bipolar Transistor and Circuit

0.8/2.2-Ghz Programmable Active Bandpass Filters in InP/Si BiCMOS Technology

Very high speed polysilicon emitter bipolar transistor and circuit

A Simplified High-Speed Bipolar Process with Ti Salicide Metallization: Implementation of in Situ P-Doped Polysilicon Emitter

High-speed Polysilicon Emitter Bipolar Technologies

Super High Speed Polysilicon Emitter Integrated Circuit Technology

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

SOI Active and Passive Integrated Devices for RFIC Applications

An Ultra-High-Speed Ecl-Bicmos Technology with Silicon Fillet Self-Aligned Contacts

Heterointegrated Ga<sub>2</sub>O<sub>3</sub>-on-SiC RF MOSFETs With <i>f</i><sub>T</sub>/<i>f</i><sub>max</sub> of 47/51 GHz by Ion-Cutting Process

A New Soi High Voltage Device Based on E-Simox Substrate

Heterointegrated Ga2O3-on-SiC RF MOSFETs with F T/f Max of 47/51 GHz by Ion-Cutting Process

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

Improvement on the Breakdown Voltage for Silicon-On-Insulator Devices Based on Epitaxy-Separation by Implantation Oxygen by A Partial Buried N(+)-Layer

Total Dose Radiation Characteristics of High Voltage LDMOS on SIMOX Substrate

The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies

Polysilicon Emitter Double Mesa Microwave Power SiGe HBT

Patterned silicon-on-insulator technology for RF Power LDMOSFET