Abstract:Silicon Carbide (SiC) power devices have become commercialized and are being adopted for many applications after 40 years of effort to produce large diameter wafers and high performance device structures. This paper provides a historical perspective of the key breakthroughs that were needed to make progress towards this goal. The JBS rectifier concept was a critical innovation required to make SiC power Schottky rectifiers viable. The Baliga-Pair or Cascode concept was an intermediate step to realize a practical SiC power switch in the 1990s. An essential unique innovation created in the 1990s was the shielded planar SiC power MOSFET structure that is now commonly used for commercial products. Shielded trench-gate SiC power MOSFETs were also proposed in the 1990s which led to commercial products in the last 5 years. Although achieving a low specific on-resistance in SiC power MOSFETs was essential at the inception of the technology, its penetration into power electronics applications is now driven by performance metrics for high frequency circuits. Device structural enhancements to improve the high frequency figures-of-merit are described that have led to major strides in performance. This includes the JBSFET concept where a JBS diode is integrated into the MOSFET structure to suppress current flow through the body diode; the SG and BG MOSFET structures which reduce the gate-drain charge; and the OCTFET structure where the gate-drain overlap area is reduced. Future developments in SiC power devices include increasing the blocking voltage rating to expand the applications spectrum. In addition, a SiC monolithic bi-directional switch has been demonstrated to allow implementation of matrix converters; and a SiC monolithic reverse blocking switch has been demonstrated to allow deployment of current source inverters.

Power MOSFETs, IGBTs, and thyristors in SiC: Optimization, experimental results, and theoretical performance

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Comparing the State-of-the-Art SiC MOSFETs: Test results reveal characteristics of four major manufacturers? 900-V and 1.2-kV SiC devices

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Recent advances in silicon carbide MOSFET power devices

Advances in SiC power MOSFET technology

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions

Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

Silicon Carbide Power Devices: Progress and Future Outlook

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Advances in SiC materials and devices: an industrial point of view

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Characteristics of SiC MOSFET and its application in a phase-shift full-bridge converter

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

Performance Comparison of Two Hybrid Si/SiC Device Concepts