Abstract:Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties of the copper is influenced significantly by the additives in the electrolyte, especially the accelerator and suppressor. In this simulation work, the electroplating process was described by a mathematical model, in which the fluid flow of electrolyte, the mass transport of the charged and neutral species and electrochemical reactions on the electrode surface were involved. Based on the mathematical model, the surface coverage of the additives and the local current density distribution at the electrode/electrolyte interface were calculated. The results show that the kinetics and mechanism of the copper deposition reaction are dependent on the fractional surface coverage of the additives. The results show that the suppressor is prior to adsorb at the electrode surface than the accelerator, due to the competitive adsorption of the suppressor and accelerator, by following the Langmiur isotherm adsorption model. Moreover, the coverage of the accelerator (SPS, Na-2(S(CH2)(3)SO3)) is high at the TSV bottom and relatively low at the TSV top. The local current density at the TSV bottom is larger than that at the TSV top and surface due to the influence of the surface coverage of the accelerator and suppressor, which contribute to the superfilling of TSV.

Growth models of copper filling in through silicon via at different current density

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

Simulation of copper electroplating fill process of through silicon via

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Optimization of Cu electrodeposition parameters for Through Silicon Via (TSV)

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Collaborative Effect Between Additives and Current in TSV Via Filling Process

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Effect of External Factors on Copper Filling in 3D Integrated Through-Silicon-Vias (TSVs)

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Numerical Simulation of the Tsv-Cu Filling by Electroplating Process with the Accelerator and Suppressor

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Simulation of through via bottom-up copper plating with accelerator for the filling of TSVs

Pure Bottom-up filling process for efficient TSV metallization

Numerical Modeling And Experimental Verification Of Through Silicon Via (Tsv) Filling In Presence Of Additives