Abstract:Variation has been shown to exist across the cells within a modern DRAM chip. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the design and placement of different components in the DRAM chip. Our goals are to understand design-induced variation that exists in real, state-of-the-art DRAM chips, exploit it to develop low-cost mechanisms that can dynamically find and use the lowest latency at which to operate a DRAM chip reliably, and, thus, improve overall system performance while ensuring reliable system operation. To this end, we first experimentally demonstrate and analyze designed-induced variation in modern DRAM devices by testing and characterizing 96 DIMMs (768 DRAM chips). Our characterization identifies DRAM regions that are vulnerable to errors, if operated at lower latency, and finds consistency in their locations across a given DRAM chip generation, due to design-induced variation. Based on our extensive experimental analysis, we develop two mechanisms that reliably reduce DRAM latency. First, DIVA Profiling uses runtime profiling to dynamically identify the lowest DRAM latency that does not introduce failures. DIVA Profiling exploits design-induced variation and periodically profiles only the vulnerable regions to determine the lowest DRAM latency at low cost. Our second mechanism, DIVA Shuffling, shuffles data such that values stored in vulnerable regions are mapped to multiple error-correcting code (ECC) codewords. Combined together, our two mechanisms reduce read/write latency by 40.0%/60.5%, which translates to an overall system performance improvement of 14.7%/13.7%/13.8% (in 2-/4-/8-core systems) across a variety of workloads, while ensuring reliable operation.

Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Time-dependent device-to-device variation accounting for within-device fluctuation (TVF): A new characterization technique

New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Investigation of Preexisting and Generated Defects in Nonfilamentary A-Si/tio2 RRAM and Their Impacts on RTN Amplitude Distribution

Large-Scale SRAM Variability Characterization in 45 nm CMOS

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition

Measurement of SRAM Standby Leakage under Advanced Logic Process

SRAM dynamic stability verification by reachability analysis with consideration of threshold voltage variation.

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

A study of scaling effects on DRAM reliability

Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability

Design and Implementation of a High-resolution SRAM Timing Parameters Measuring Circuit

Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM

Understanding and Exploiting Design-Induced Latency Variation in Modern DRAM Chips