Peak-to-peak Switching Noise and LC Resonance on a Power Distribution TSV Pair

Ahmad, W.,Qiang Chen,Li-Rong Zheng,Tenhunen, H.

DOI: https://doi.org/10.1109/epeps.2010.5642574

2010-01-01

Abstract:How peak-to-peak switching noise as well as the LC resonance term varies by varying different circuit parameters of a power distribution TSV pair (having decoupling capacitance and logic load), within a 3D stack of ICs interconnected through TSVs.

What problem does this paper attempt to address?

Peak-To-Peak Ground Noise on A Power Distribution Tsv Pair As A Function of Rise Time in 3-D Stack of Dies Interconnected Through Tsvs

Waqar Ahmad,Li-Rong Zheng,Qiang Chen,Hannu Tenhunen

DOI: https://doi.org/10.1109/tcpmt.2010.2099732

2011-01-01

Abstract:Supply grids of integrated chips are interconnected through through-silicon vias (TSVs) in modern design techniques to form a 3-D stack in vertical direction. The load on each chip is supplied through (power/ground) TSV pairs. Accurate estimation of power/ground noise on each TSV pair of a 3-D power distribution network is necessary for a robust power supply design. The worst case noise obtained with fast switching characteristics may not be significantly accurate. The behavior of power/ground noise as a function of rise time for an inductive power distribution TSV pair with decoupling capacitance, is investigated in this paper. An equivalent rise time corresponding to resonance is presented to accurately estimate the worst case power/ground noise in the time domain. In addition noise sensitivity to decoupling capacitance and TSV inductance is evaluated as a function of rise time. We also discuss noise accumulation as a result of worst case damping factor in this paper.
Modeling of peak-to-peak switching noise along a vertical chain of power distribution TSV pairs in a 3D stack of ICs interconnected through TSVs

Ahmad, W.,Qiang Chen,Li-Rong Zheng,Tenhunen, H.

DOI: https://doi.org/10.1109/NORCHIP.2010.5669473

2010-01-01

Abstract:On-chip power supply noise has become a bottleneck in 3D ICs as scaling of the supply network impedance has not been kept up with increasing device densities and operating currents with each technology node due to limited wire resources. In this paper we proposed an efficient and accurate model to estimate peak-to-peak switching noise, caused by simultaneous switching of logic loads along a vertical chain of power distribution TSV pairs in a 3D stack of ICs. The proposed model is quite accurate with only 2-3% difference from Ansoft Nexxim4.1 equivalent model. The proposed model is 3-4 times faster than Nexxim4.1 as well as consumes two times less memory as compared to Nexxim4.1equivalent model. We analyzed peak-to-peak switching noise along a vertical chain of power distribution TSV pairs by varying physical dimensions of TSVs and value of decoupling capacitance. We also thoroughly investigated the peak-to-peak noise sensitivity to TSV effective inductance and decoupling capacitance.
Modeling of Peak-to-peak Core Switching Noise, Output Impedance, and Decoupling Capacitance along a Vertical Chain of Power Distribution TSV Pairs

Waqar Ahmad,Qiang Chen,Li-Rong Zheng,Hannu Tenhunen

DOI: https://doi.org/10.1007/s10470-011-9797-0

IF: 1.321

2012-01-01

Analog Integrated Circuits and Signal Processing

Abstract:In this article we propose an efficient and accurate model to estimate peak-to-peak core switching noise, caused by simultaneous switching of logic loads along a vertical chain of power distribution TSV pairs in a 3D stack of dies interconnected through TSVs. The proposed model is accurate with only a 2–3% difference in peak-to-peak core switching noise as compared to the Ansoft Nexxim4.1 equivalent model. The proposed model is 3–4 times faster than Ansoft Nexxim4.1 and uses two times less memory as compared to the Ansoft Nexxim4.1 equivalent model. In this article we also thoroughly establish design guidelines for almost flat output impedance magnitude at each stage of a vertical chain of power distribution TSV pairs to realize a resonance free scenario over a wide operating frequency range. We also establish decoupling capacitance design guidelines based on the optimum output impedance and critically damped supply voltage for the core logic for each stage of a vertical chain of power distribution TSV pairs.
Power Distribution TSVs Induced Core Switching Noise

Waqar Ahmad,Rajeev Kumar Kanth,Qiang Chen,Li-Rong Zheng,Hannu Tenhunen

DOI: https://doi.org/10.1109/edaps.2010.5683008

2010-01-01

Abstract:Size of on-chip interconnects as well as the supply voltage is reducing with each technology node whereas the operating speed is increasing in modern VLSI design. Today, the package inductance and resistance has been reduced to such an extent that core switching noise caused by on-chip inductance and on-chip resistance is gaining importance as compared to I/O drivers switching noise. Both on-chip inductance and skin effect are prime players at frequencies of the order of GHz. The problem is further aggravated when chips are interconnected through TSVs to form a 3D integrated stack in order to achieve low form factor and high integration density. In this paper we analysed peak core switching noise in a 3D stack of integrated chips interconnected through power distribution TSV pairs, through our comprehensive mathematical model which has been proved to be quite accurate as compared to SPICE. We analysed the effect of number of chips in a 3D stack, rise time, decoupling capacitance, and skin effect on power distribution TSVs induced core switching noise in this paper.
Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Xing Chang Wei,Zaw,En-xiao Liu,Er-Ping Li

DOI: https://doi.org/10.1109/icmmt.2012.6229902

2012-01-01

Abstract:The power supply grids of integrated circuits (ICs) are interconnected through silicon vias (TSVs) to form a 3-D chip integration in vertical direction. The required currents for each functional device to operate in the ICs are supplied through power and ground TSV pairs and power distribution meshes. Accurate estimation of power/ground noises (static and dynamic drops) in a 3-D power distribution network is crucial for a robust power supply design in order to operate the devices functionally. With fast switching characteristics of the devices, the worst case power supply noise may not be analysed accurately. In this paper, we present a systematic approach to analyse the static and dynamic drop, as a function of switching time, in power supply grids of 3-D ICs. Furthermore the approach is extended to investigate noise sensitivity of TSVs and power supply grids with decoupling capacitors.
A Symmetrical Resonant Converter and PCB Transformer Structure for Common Mode Noise Reduction

Bin Li,Qiang Li,Fred C. Lee,Yuchen Yang

DOI: https://doi.org/10.1109/ecce.2017.8096898

2017-01-01

Abstract:Wide-band-gap devices can provide much faster switching speed. But the dv/dt of switching node voltage also becomes much higher, causing potential common mode noise issue. On the other hand, PCB winding transformer has significant large inter-winding capacitance, which provides a low impedance path for common mode noise. In this paper, a symmetrical resonant converter as well as a symmetrical PCB transformer structure is proposed. By using cancellation concept, common mode current brought by the large inter-winding capacitor is cancelled out and therefore the total system common mode noise is significantly reduced. No additional hardware implementation is required and the system structure is simple. A 6.6kW 500kHz WBG based CLLC resonant converter prototype with 97.8% efficiency and 130W/in3 power density is built to verify the superior performance and feasibility of the proposed concept.
High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Na Li,Junfa Mao,Wen-Sheng Zhao,Min Tang,Wen-Yan Yin

DOI: https://doi.org/10.1109/tcpmt.2018.2853405

2018-01-01

IEEE Transactions on Components Packaging and Manufacturing Technology

Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.
Novel LC resonant clocking for 3D IC using TSV-inductor and capacitor

Shaoheng Luo,Baixin Chen,Ke Li,Cheng Zhuo,Yiyu Shi

DOI: https://doi.org/10.1109/edaps.2017.8277019

2017-01-01

Abstract:At sub-14nm regime, large area overhead induced by on-chip capacitor and inductor is a major concern to ensure power integrity or enable on-chip applications. To overcome this issue, a novel 3D Through-Silicon-Via (TSV) based capacitor is investigated in this work, which may achieve both high density and high performance. The capacitor simulated in this work alleviates the depletion effect adding doping region around the TSV so that the capacitor can maintain its maximum value within operation voltage range. Moreover, the equivalent serial resistance of the proposed capacitor is reduced through doping and distributed grounded contact technology. An LC resonant clock is also simulated in this work, by replacing conventional capacitor and inductor to TSV based structures, it may achieve a 16.3x capacitor area reduction and 2.2x inductor area reduction while the performance stays almost the same.
Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Wen-Sheng Zhao,Wen-Yan Yin,Yong-Xin Guo

DOI: https://doi.org/10.1109/temc.2011.2167336

IF: 2.036

2012-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:Electromagnetic compatibility-oriented study is performed for accurately characterizing through siliconsingle-walled carbon nanotube bundle via (TS-SWCNTBV) array in this paper. Based on the modified equivalent lumped-element circuit model of a pair of TS-SWCNTBVs, its forward transmission coefficient, in comparison with copper-and tungsten-based TSVs, is investigated for different metallic fractions of the SWCNTs, with quantum effects treated appropriately. The 3-D transmission-line method (TLM) is further employed for studying mutual couplings in three, four, and nine TS-SWCNTBV arrays, respectively, where the effects of their geometrical and physical parameters on the effective capacitance and conductance are examined in detail. Also, transient coupling noises in different arrays excited by a clock signal, respectively, are predicted and compared, which are useful for the design of high density TS-SWCNTBV arrays with better signal transmission performance.
Synchronization of Multiple Spark-Gap Switches by A Transmission Line Transformer

Z Liu,K Yan,AJM Pemen,GJJ Winands,EJM Van Heesch

DOI: https://doi.org/10.1063/1.2132269

2005-01-01

Abstract:A transmission line transformer (TLT)-based multiple-switch circuit topology was recently proposed for pulsed-power generation. By means of a TLT, multiple spark-gap switches can be synchronized in a short time (ns). It is attractive to be used to design a long-lifetime repetitive large pulsed-power source (100kW, 1kHz) for various kinds of applications, such as corona plasma-induced gas cleaning. To gain insight into the synchronization principle and switching behavior of the individual switch, an equivalent circuit model was developed and an experimental setup with two spark-gap switches and a two-stage TLT has been constructed. We observed that in terms of switching currents, the two switches can be synchronized within 2–3ns. The equivalent circuit model approximately fits the experimental results.
Fast Modeling Of Core Switching Noise On Distributed Lrc Power Grid In Ulsi Circuits

Lr Zheng,H Tenhunen

DOI: https://doi.org/10.1109/6040.938290

2001-01-01

IEEE Transactions on Advanced Packaging

Abstract:As technology scales, power supply noise caused by core logic switching becomes critical. Shorter signal rise edge, high integration density, and necessity of using on-chip decoupling capacitors require that the on-chip power distribution should be modeled as an LRC transmission line network with millions of switching devices. In this paper, we propose a sophisticated power grid model consisting of distributed LRC elements excited by constant voltage sources and switching capacitors. Based on this, fast equations for core switching noise estimations were formulated. Full-chip noise distribution on the power grid with any topology was efficiently and accurately computed. SPICE simulations confirmed its efficiency and accuracy. Experimental results obtained on our benchmark circuits revealed that the proposed technique speeded up simulations by several orders of magnitude compared with SPICE, whereas typical relative error was between 0 +/- 5 %. By integrating a packaging model, the new model predicts accurately the upper boundaries of noise level for power bounce, ground bounce, and differential-mode power noise. Meanwhile, locations of hot spots in the power network are precisely identified. The model is suitable for full-chip rapid simulations for on-chip power distribution design in advanced ultra large scale integration (ULSI) circuits, particularly for early stage analysis, in which global and local optimization such as topology selection, power bus sizing, and on-chip decoupling capacitor placement can be easily conducted.
Systematic Analysis for Static and Dynamic Drops in Power Supply Grids of 3-D Integrated Circuits

Zaw,Liu En-Xiao,Joseph Romen Cubillo,Li Er-Ping

DOI: https://doi.org/10.1109/apemc.2012.6237987

2012-01-01

Abstract:In recent emerging 3-D chip integration techniques, on-chip power supply grids are interconnected vertically by through silicon vias (TSVs). The operational currents required by each functional device in the integrated circuits (ICs) are supplied through vertical power and ground TSVs, and horizontal power grids. Accurate estimation of power supply noise (i.e., static and dynamic drops) in a 3-D power distribution network is crucial for a robust power supply design. Fast switching speed of the devices complicated the accurate analysis of the worst case power supply noise. In this paper, we present a systematic approach to analyse the static and dynamic drops for the power supply grids in 3-D ICs. The approach is further extended to study the planning of decoupling capacitors in 3D ICs to contain power supply noise.
Modeling of the Simultaneous Switching Noise in High Speed Electronic Circuit with the Integral Equation Method and Vector Fitting Method

Guo-Ping Zou,Xing-Chang Wei,Er-Ping Li,Xiang Cui,Wei-Dong Zhang

DOI: https://doi.org/10.1109/tmag.2010.2089433

IF: 1.848

2011-01-01

IEEE Transactions on Magnetics

Abstract:Simultaneous switching noise (SSN, also called delta-I noise) has become a tremendous challenge to the reliable operation of high speed electronic circuits. Etching narrow slots on the power or ground plane is one of the efficient techniques to isolate the SSN. A new method for modeling SSN of power-ground planes with narrow slot is proposed in this paper. Firstly, the gapped power-ground planes characteristic is derived from a hybrid field-circuit method. This method makes a full use of the gapped power-ground planes physical structure, takes into account both the parallel power-ground planes characteristic and slot coupling effect in one model. Then, the frequency domain transfer function between two ports of power-ground planes can be obtained from this model. Secondly, in order to overcome the conventional fast Fourier transform inevitable flaws, the vector fitting technique is used to approximate the transfer function as a rational function. Finally, the SSN voltage can be derived from this rational function and exciting current.
Time Domain PDN Noise Modeling for High Performance System

Han-Biao Jin,Er-Ping Li,Albert E. Ruehli,James L. Drewniak,Bruce Archambeault

DOI: https://doi.org/10.1109/epeps.2016.7835418

2016-01-01

Abstract:In this paper, we investigate the impact of the PDN inductance/impedance as well as the decoupling capacitors location on the initial IC noise voltage drop for a high performance system. To consider a worst case situation for the noise voltage at the integrated circuit (IC) we set the on-chip capacitance to zero. The impact of the delay due to remote location of the decoupling capacitors for fast rise-time current waveforms is also studied.
One Bump on Power Rail One Bump on Gnd Rail Power Pin on Package Gnd Pin on Package topL topR botL viaL viaRbotR botL viaL viaRbotR topL topR pkgC cpkgR cpkgL

Yici Cai,Shelton X-D Tan,Xianlong Hong

2005-01-01

Abstract:* This work is supported by National Natural Science Foundation of China (NSFC) 60476014, National Hi-tech R&D Program of China 2005AA1Z1230, and Foundation of Intel Corporation Abstract In this paper, we study the relationship between C4 package resonance effects and logical switching timing correlations, which has not been thoroughly investigated in the past. We show that improper logic designs with some special timing correlations can lead to adverse large voltage drops, which are due to resonance effects in the widely used C4 package. We first present the numerical analysis results on industry C4 package circuits to demonstrate resonance phenomenon. Then we propose a simple algorithm to compute the worst-case logical timing correlations among cells leading to resonance. Finally, we develop an efficient technique in early logic design stage to estimate the resonance risk. Experiment results demonstrate the effectiveness of the proposed method for the accurate prediction of the resonance effect in C4 package.
Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Hui Min Lee,En-Xiao Liu,G. S. Samudra,Er-Ping Li

DOI: https://doi.org/10.1109/memc.0.7764251

2016-01-01

IEEE Electromagnetic Compatibility Magazine

Abstract:This paper presents power integrity modeling, measurement and analysis of a seven-chip stack for through-silicon via (TSV)-based 3D IC integration. A hybrid full-wave and circuit approach, combined with a cascaded scattering matrix technique, is proposed to model the multi-chip stack consisting of TSVs, on-chip power grids and on-chip decoupling capacitors. The hybrid approach leverages the accuracy of a full-wave approach and shorter computational time of a circuit approach. Modeling results show good correlation with measurement from 1.1 GHz to 20.1 GHz. Power integrity analysis is then performed on the seven-chip stack. To the best of our knowledge, this is the first power integrity modeling, measurement and analysis of seven-chip stack including on-chip decoupling capacitors.
Study of the Resonance Phenomenon in Switching Mode Power Supply (SMPS)

M Kchikach,R Lee,HF Weinner,Y Zidani,YS Yuan,ZM Qian

DOI: https://doi.org/10.1109/pesc.2004.1355316

2004-01-01

Abstract:Multi resonance is highly possible to appear inside conductive and radiated frequency range. This paper presents simplified equivalent circuit model used to study the resonance phenomenon in switching mode power supply (SMPS). Indeed, the electromagnetic interference (EMI) caused by a resonance is a critical factor, and is a source of the high conducted EMI that physically affects the tested AC/DC converter used for telecom applications (to comply with the standard EN300 386 conducted emission requirements). The proposed equivalent circuit model contains essential couplings, parasitic elements, and sources occurred in the common mode current path. This series resonance circuit is primarily composed of input cables; equivalent voltage source and the intentional parameters of the converter are examined theoretically. Experimental results are presented to confirm the cause.
Modeling the simultaneous switching noise with the integral equation method and vector fitting method

Guo Ping Zou,Erping Li,Xiang Cui,Weidong Zhang,Zhaonan Luo

DOI: https://doi.org/10.1109/CEFC.2010.5481656

2010-01-01

Abstract:Simultaneous switching noise (SSN, also called delta-I noise) has became a tremendous challenge to the reliable operation of high speed circuit. A new method for modeling SSN of gapped power-ground planes is proposed in this paper. The gapped power-ground planes characteristics are derived from a hybrid field-circuit method. With this method, the parallel power-ground planes resonance characteristics and slot effect are considered in one model. After using vector fitting technique, the fluctuating voltage is obtained with the excitation of simultaneous switch noise. © 2010 IEEE.
Study on the power bus noise isolation using a SPICE compatible method

Zhi Hong Liu,Er Ping Li,Kye Yak See,En Xiao Liu

DOI: https://doi.org/10.1109/ISEMC.2005.1513554

2005-01-01

Abstract:In nowadays high speed PCB design, the normal operation of the analog integrated circuits depends much on the stable voltage supply between DC power and ground. To maintain the signal fidelity and mitigate the effect of SSN (simultaneous switching noise) on the power signal, power bus plane segmentation and noisy device isolation using power island are often employed. This paper proposed one method that can simulate the effects of the power bus noise isolation using the SPICE compatible method to provide the strategy to the IC design.

Peak-to-peak Switching Noise and LC Resonance on a Power Distribution TSV Pair

Peak-To-Peak Ground Noise on A Power Distribution Tsv Pair As A Function of Rise Time in 3-D Stack of Dies Interconnected Through Tsvs

Modeling of peak-to-peak switching noise along a vertical chain of power distribution TSV pairs in a 3D stack of ICs interconnected through TSVs

Modeling of Peak-to-peak Core Switching Noise, Output Impedance, and Decoupling Capacitance along a Vertical Chain of Power Distribution TSV Pairs

Power Distribution TSVs Induced Core Switching Noise

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

A Symmetrical Resonant Converter and PCB Transformer Structure for Common Mode Noise Reduction

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Novel LC resonant clocking for 3D IC using TSV-inductor and capacitor

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Synchronization of Multiple Spark-Gap Switches by A Transmission Line Transformer

Fast Modeling Of Core Switching Noise On Distributed Lrc Power Grid In Ulsi Circuits

Systematic Analysis for Static and Dynamic Drops in Power Supply Grids of 3-D Integrated Circuits

Modeling of the Simultaneous Switching Noise in High Speed Electronic Circuit with the Integral Equation Method and Vector Fitting Method

Time Domain PDN Noise Modeling for High Performance System

One Bump on Power Rail One Bump on Gnd Rail Power Pin on Package Gnd Pin on Package topL topR botL viaL viaRbotR botL viaL viaRbotR topL topR pkgC cpkgR cpkgL

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Study of the Resonance Phenomenon in Switching Mode Power Supply (SMPS)

Modeling the simultaneous switching noise with the integral equation method and vector fitting method

Study on the power bus noise isolation using a SPICE compatible method