Phase of intermodulation distortion products in high-linearity photodiode: Measurement technique and theoretical model

Yang Fu,Huapu Pan,Beling, A.,Campbell, J.

DOI: https://doi.org/10.1109/IPCon.2012.6358537

2012-01-01

Abstract:The third-order intermodulation distortion products (IMD3) of the high-linearity InGaAs/InP photodiode exhibit 180 degree phase changes around their minima, which can be explained by a nonlinear responsivity model.

What problem does this paper attempt to address?

Phase Characterization of Intermodulation Distortion in High-Linearity Photodiodes

Yang Fu,Huapu Pan,Andreas Beling,Joe Campbell

DOI: https://doi.org/10.1109/iciprm.2012.6403362

2012-01-01

Abstract:We present a simple method to obtain both magnitude and phase information of intermodulation distortion (IMD) in photodiodes. The IMD3 of the high-linearity InGaAs/InP photodiode exhibits 180 degree phase changes around its zero crossings.
Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions

Wei QI,Hai-feng SHAO,Hui YU,Xiao-qing JIANG

DOI: https://doi.org/10.3788/fgxb20163706.0758

2016-01-01

Chinese Journal of Luminescence

Abstract:Electro-optic modulators with high linearity are core devices of microwave photonic link. The modulation mechanism of the silicon optical modulator is based on the carrier dispersion effect which is nonlinear and its nonlinearity is highly related to the structure of PN junction. In this pa-per, the second-order spurious-free dynamic range ( SFDR2 ) is introduced to characterize the second harmonic distortion ( SHD ) of modulators. The SHD of silicon optical Mach-Zehnder modulator ( MZM) based on two most widely used doping patterns, i. e. , the lateral and the interdigitated PN junctions are compared with each other. The experimental results show that the lateral PN junction and interdigitated PN junction based MZMs have SFDR2 of 85. 11 dB·Hz1/2 and 78. 44 dB·Hz1/2 , respectively. The lateral PN junction based MZM has a better linearity.
High-Power High-Linearity InGaAs/InP Photodiodes

Andreas Beling,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1149/1.3104708

2009-01-01

ECS Transactions

Abstract:The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.
Characterizing and Modeling Nonlinear Intermodulation Distortions in Modified Uni-Traveling Carrier Photodiodes

yang fu,huapu pan,zhi li,andreas beling,j c campbell

DOI: https://doi.org/10.1109/JQE.2011.2165700

2011-01-01

Abstract:We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<;3 GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements.
Linearization of Two Cascaded Intensity-Modulator-based Analog Photonic Link

Xiang Zhu,Tao Jin,Hao Chi,Jinhai Zhou,Guochuan Tong,Dong Li,Lulu Zuo,Ying Fu

DOI: https://doi.org/10.1117/1.oe.57.8.080501

IF: 1.3

2018-01-01

Optical Engineering

Abstract:A linearization scheme based on two cascaded intensity modulators is proposed and experimentally demonstrated. By optimizing the biases, the power ratio and the phase difference between the drive signals applied to the two Mach-Zehnder modulators (MZMs), the third-order intermodulation distortion (IMD3) can be effectively eliminated over a wide operating bandwidth of 1 to 12 GHz without the same RF phase at two modulators, which is required in previous works. The ratio of the fundamental output to the IMD3 reaches 50.21 to 63.28 dB, which has an improvement of 18.35 to 31.42 dB compared to that of a single MZM link. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Andreas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2008.926016

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a two-tone setup. At 310-MHz modulation frequency, the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Based on experimental results for the dependence of responsivity and PD capacitance on bias voltage and photocurrent, we use a simple equivalent circuit model to simulate the frequency characteristics of the intermodulation distortions.
Measurement and Modelling of High-Linearity Partially Depleted Absorber Photodiode

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1049/el:20089792

2008-01-01

Electronics Letters

Abstract:Third-order intermodulation distortions of an InGaAs/InP partially depleted absorber photodiode (PDA-PD) using high doping levels for both p-type and n-type absorbers are characterised using a two-tone measurement technique. The third-order local intercept point (IP3) of the device increases only slightly with frequency, and remains as high as 39 dBm up to 20 GHz. The frequency characteristics of the IP3 can be well explained by an equivalent circuit model.
A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance

Huapu Pan,Andreas Beling,Hao Chen,Joe C. Campbell,P. D. Yoder

DOI: https://doi.org/10.1109/jlt.2009.2024168

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. Plots of the third-order local intercept point (IP3) versus photocurrent exhibit peaks. A simple analytical model is developed which explains that the peaks are due to the interaction of voltage-dependent and photocurrent-dependent capacitance effects.
The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

huapu pan,andreas beling,hao chen,j c campbell,p d yoder

DOI: https://doi.org/10.1109/MWP.2008.4666640

2008-01-01

Abstract:Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. At 310 MHz modulation frequency the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Voltage dependent nonlinear responsivity is found to be the limiting factor for the IP3 at low frequency, while the voltage and photocurrent dependent nonlinear capacitance is responsible for the decreasing IP3 with increasing frequency. The physical origins of the nonlinear responsivity and capacitance are investigated.
High-Linearity Uni-Traveling-Carrier Photodiodes

Huapu Pan,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/lpt.2009.2034126

IF: 2.6

2009-01-01

IEEE Photonics Technology Letters

Abstract:The third-order intermodulation distortions of an InGaAs-InP charge-compensated uni-traveling-carrier photodiode are characterized using both two-tone and three-tone measurement techniques. Up to 720-MHz modulation frequency the third-order output intercept point (OIP3) reaches 56 ±1 dBm.
Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Huapu Pan,Zhi Li,Andreas Beling,Joe C Campbell

DOI: https://doi.org/10.1364/OE.17.020221

IF: 3.8

2009-01-01

Optics Express

Abstract:The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (<3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model. (C) 2009 Optical Society of America
Linearity Of Modified Uni-Traveling Carrier Photodiodes

Andreas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/JLT.2008.927184

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode's 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.
Bit-Error-Rate Performance Analysis of Self-Heterodyne Detected Radio-Over-Fiber Links Using Phase and Intensity Modulation

Xiaoli Yin,Xianbin Yu,Idelfonso Tafur Monroy

DOI: https://doi.org/10.1109/tmtt.2010.2074490

IF: 4.3

2010-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:We theoretically and experimentally investigate the performance of two self-heterodyne detected radio-over-fiber (RoF) links employing phase modulation (PM) and quadrature biased intensity modulation (IM), in terms of bit-error rate (BER) and optical signal-to-noise ratio (OSNR). In both links, self-heterodyne receivers perform down-conversion of the RF subcarrier signal. A theoretical model including noise analysis is constructed to calculate the Q factor and estimate the BER performance. Furthermore, we experimentally validate our prediction from the theoretical modeling. Both the experimental and theoretical results show that the PM link offers superior OSNR receiver sensitivity performance (more than 6 dB) over the quadrature biased IM counterpart.
Aharonov-Anandan Phase in the Degenerate Parameteric Amplifier

TZ QIAN,JB XU,XC GAO

DOI: https://doi.org/10.1088/0256-307x/8/10/002

1991-01-01

Chinese Physics Letters

Abstract:As a non-adiabatic generalisation of a recent work of Gerry, the manifestation of the Aharonov-Anandan phase in the degenerate parametric-amplifier of quantum optics is discussed by making use of the Lewis-Riesenfeld quantum theory. We find the Lewis invariant for the system and study its evolution. The Aharonov-Anandan phase is then calculated and the connection between the Aharonov-Anandan phase difference and the average photon-number of the output field is obtained. Finally, the observable effect of the phase difference is investigated.
Characterizing third-order intermodulation distortion of photodetectors based on de-coupling and de-embedding modulation distortion of modulators

Di Lei,Ying Xu,Xinhai Zou,Yali Zhang,Zhiyao Zhang,Linze Li,Baile Chen,Shangjian Zhang,Yong Liu,Ninghua Zhu

DOI: https://doi.org/10.1364/ol.532291

IF: 3.6

2024-09-21

Optics Letters

Abstract:Di Lei, Ying Xu, Xinhai Zou, Yali Zhang, Zhiyao Zhang, Linze Li, Baile Chen, Shangjian Zhang, Yong Liu, Ninghua Zhu A novel, to the best of our knowledge, electro-optical modulation method is proposed for measuring third-order intermodulation distortion ... [Opt. Lett. 49, 5439-5442 (2024)]

optics
Phase-modulation Effects in Degenerate Four-Wave-mixing

Q. Yang,G. Xu,X. Liu,J. Si,P. Ye

DOI: https://doi.org/10.1007/s003400050415

1998-01-01

Abstract:Theoretical and experimental studies of phase-modulation effects in degenerate four-wave mixing are presented in this paper. Our experiments and analysis show that phase-modulation effects change the phase-matching condition and lead to a decrease in signal output and a degradation in conjugation fidelity.
The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements

Huapu Pan,Andreas Beling,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/JQE.2009.2013089

IF: 2.5

2009-01-01

IEEE Journal of Quantum Electronics

Abstract:The effect of modulated voltage on the nonlinear response of an InGaAs-InP charge-compensated modified uni-traveling carrier photodiode is characterized using a modulated bias measurement setup. Based on experimental results for the dependence of responsivity and photodetector capacitance on bias voltage, we use a simple equivalent circuit model to explain the frequency characteristics of the inte...
Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1109/leos.2007.4382442

2007-01-01

Abstract:The two-tone third-order intermodulation distortions of an InGaAs/InP modified charge compensated uni-traveling carrier photodiode with both absorbing and non-absorbing depleted region are characterized. Around 12 GHz modulation frequency, the third-order intercept point is >40 dBm over a wide range of photocurrents.
A General Analytical Method for Suppressing the Third-Order Intermodulation in Microwave Photonic Link Based on Dual-Parallel Mach–Zehnder Modulator

Hang Yang,Shilie Zheng,Siyuan Xu,Jun Ji,Fuhai Li,Xianmin Zhang

DOI: https://doi.org/10.1016/j.optcom.2019.124818

IF: 2.4

2020-01-01

Optics Communications

Abstract:A general analytical method by adjusting the phases of the signals applied to the four electrodes of a dual-parallel Mach–Zehnder modulator (DPMZM) is proposed to suppress the third-order intermodulation (IMD3) in microwave photonic link. Through the detailed theoretical and numerical analysis, all the signal combinations for the four electrodes of the DPMZM are found and classified into three groups according to the IMD3 cancellation mechanism. In this process, a new group of the four electrodes’ setting to suppress the IMD3 is found. The simulation and experiment are carried out to verify our discovery. It is found that this newly found group can also suppress IMD3 by about 30 dB and improve the spurious free dynamic range (SFDR) by 11.5 dB⋅Hz2∕3.
Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

Qiang Zhang,Hui Yu,Hao Jin,Tian Qi,Yan Li,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/jlt.2018.2839603

IF: 4.7

2018-01-01

Journal of Lightwave Technology

Abstract:In this paper, a model is built to investigate the linearity of silicon carrier depletion based Mach-Zehnder modulators (MZMs). By approximating the nonlinear electro-optical response of a PN junction with a fourth-order polynomial, the model quantitatively calculates the modulation linearity of three different MZM configurations that have been widely used in analog optical links, i.e., single, dual-parallel, and dual-series MZMs, and qualitatively explains their respective operation mechanisms to suppress the third-order intermodulation distortion. The optimal operation condition of each configuration is derived to enhance the first-order harmonic component and suppress the nonlinear distortion. A fair comparison is performed between the three configurations in terms of their robustness, footprint, strength of the first-order harmonic component, stability, and tolerance against variations of driving RT power and control error, and so on. The result indicates that the dual-series MZM represents a reasonable tradeoff between these performance characteristics of interests.

Phase of intermodulation distortion products in high-linearity photodiode: Measurement technique and theoretical model

Phase Characterization of Intermodulation Distortion in High-Linearity Photodiodes

Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions

High-Power High-Linearity InGaAs/InP Photodiodes

Characterizing and Modeling Nonlinear Intermodulation Distortions in Modified Uni-Traveling Carrier Photodiodes

Linearization of Two Cascaded Intensity-Modulator-based Analog Photonic Link

Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Measurement and Modelling of High-Linearity Partially Depleted Absorber Photodiode

A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance

The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

High-Linearity Uni-Traveling-Carrier Photodiodes

Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Linearity Of Modified Uni-Traveling Carrier Photodiodes

Bit-Error-Rate Performance Analysis of Self-Heterodyne Detected Radio-Over-Fiber Links Using Phase and Intensity Modulation

Aharonov-Anandan Phase in the Degenerate Parameteric Amplifier

Characterizing third-order intermodulation distortion of photodetectors based on de-coupling and de-embedding modulation distortion of modulators

Phase-modulation Effects in Degenerate Four-Wave-mixing

The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements

Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

A General Analytical Method for Suppressing the Third-Order Intermodulation in Microwave Photonic Link Based on Dual-Parallel Mach–Zehnder Modulator

Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators