Electrically Controlled Phase Shifter Using Semiconductor Laser in Optical Single Sideband System

F. M. Wu,P. C. Peng,S. K. Yeh,C. T. Lin,J. H. Chen,S. Chi

DOI: https://doi.org/10.1109/leos.2009.5343128

2009-01-01

Abstract:This investigation experimentally explores a microwave phase shifter using a semiconductor laser in an optical single sideband system. The operational bandwidth from 12 to 20 GHz is achieved by adjusting the bias current.

What problem does this paper attempt to address?

40 GHz Phase Shifter Based on Semiconductor Laser

P. C. Peng,F. M. Wu,C. T. Lin,J. H. Chen,W. C. Kao,P. T. Shih,W. J. Jiang,H. C. Kuo,S. Chi

DOI: https://doi.org/10.1049/el:20080457

2008-01-01

Electronics Letters

Abstract:This investigation experimentally demonstrates a 40 GHz phase shifter based on a semiconductor laser. The phase shift is achieved by adjusting the bias current and wavelength detuning. The device has an optical delay of 23 ps and a phase shift of about 331 degrees.
RF Phase Shifter Using a Distributed Feedback Laser in Microwave Transport Systems.

Peng-Chun Peng,Fang-Ming Wu,Wen-Jr Jiang,Ruei-Long Lan,Chun-Ting Lin,Jason (Jychong) Chen,Po Tsung Shih,Gong-Ru Lin,Sien Chi

DOI: https://doi.org/10.1364/oe.17.007609

IF: 3.8

2009-01-01

Optics Express

Abstract:This work experimentally demonstrates the efficacy of a radio-frequency phase shifter using a distributed feedback laser in a microwave transport system. Phase shifts of about 101 degrees are obtained at 8.75 GHz. The proposed phase shifter can amplify microwave signals and thereby improve transmission performance. Additionally, a similar single sideband modulation can be generated by the phase shifter. Experimental results indicate that the proposed phase shifter can be used in future long-distance microwave transport systems and all optical inverters.
Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Lin Wu,Yin Wang,Tingting Yu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2012.2191950

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:A wavelength switchable semiconductor laser based on half-wave coupled Fabry-Perot and rectangular ring resonators is proposed and demonstrated. The device consists of all-active waveguides to facilitate the fabrication. The cavity lengths are designed with a small difference to employ the Vernier effect to obtain large wavelength tuning. A half-wave coupler is used to produce a phase-dependent loss, thus achieving a high side-mode suppression ratio (SMSR). By adjusting the current applied to just one electrode, six-channels wavelength switching with 200-GHz spacing is measured by the carrier injection effect, with a current variation of only about 20 mA. At higher current injection level, the thermal-optic effect becomes dominant, which produced eight-channels wavelength switching in the opposite direction with a maximal SMSR of 38.5 dB.
Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Lin Wu,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.ath2b.7

2012-01-01

Abstract:We report our latest experimental results of the half-wave coupled rectangular ring-FP laser. Single-electrode-controlled wavelength switching over 14 channels with 200GHz spacing is demonstrated with side-mode-suppression-ratio (SMSR) up to 37dB. And the total device size is only 0.5×0.4 mm2.
Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Lei Wang,Jialiang Jin,Jian-Jun He

2011-01-01

Abstract:We report our latest experimental results on a simple and compact wavelength switchable V-coupled cavity semiconductor laser. Discrete wavelength switching of 26 channels with 100GHz spacing is achieved with a side-mode-suppression-ratio of about 37 dB, using a single-electrode control. It is shown that the wavelength channels can be switched in opposite directions with different consecutively switchable ranges by tuning the long or short cavity.
Optically Tuneable Microwave-Photonic Phase Shifter Based on Silicon Microring Resonator

Qiang Li,Qingjiang Chang,Fangfei Liu,Ziyang Zhang,Min Qiu,Yikai Su

DOI: https://doi.org/10.1109/ecoc.2008.4729458

2008-01-01

Abstract:We demonstrate a microwave-photonic phase shifter based on a 20-mu m-radius silicon microring resonator, providing a tunable phase shift for a 20-GHz signal in a range of 0 - -4.6 rad.
Planar Tunable High-Temperature Superconductor Microwave Broadband Phase Shifter with Patterned Ferroelectric Thin Film

P. Wang,C. Y. Tan,Y. G. Ma,W. N. Cheng,C. K. Ong

DOI: https://doi.org/10.1088/0953-2048/20/1/014

2007-01-01

Abstract:A planar tunable high-temperature superconductor (HTS) microwave phase shifter with patterned ferroelectric thin film is presented in this paper. The circuit is based on a coplanar strip (CPS) transmission line periodically loaded with planar varactors. The CPS line is transformed to microstrip input/output by baluns. The patterning of the ferroelectric thin film reduces the conductor loss and eliminates unwanted tuning comparing with circuits where a whole layer of ferroelectric thin film is used. The circuit is optimized for high tunability following analytical equations. The phase shifter thus fabricated has a broadband response from 7 to 11 GHz. At 200 V DC bias, an average phase shift of 20 degrees is achieved.
1–2 GHz 2 mW injection-locked ring oscillator based phase shifter in 0.18 µm CMOS technology

Cai Long Jin,Xiao Peng Yu,Wen-Quan Sui

DOI: https://doi.org/10.1049/el.2016.2501

2016-01-01

Electronics Letters

Abstract:A new phase shifter based on injection-locked ring oscillator is proposed. By using a multi-stage phase generator with voltage-controlled injection locking technique, the proposed phase shifter is able to generate a flexible combination of coarse and fine-tuned phase delays over a wide range of operating frequencies while a small silicon area is maintained. Fabricated in a 0.18 μm RF CMOS process ...
A Tunable Broadband Photonic RF Phase Shifter Based on a Silicon Microring Resonator

Qingjiang Chang,Qiang Li,Ziyang Zhang,Tong Ye,Yikai Su

DOI: https://doi.org/10.1109/LPT.2008.2008658

2009-01-01

Abstract:We propose and demonstrate a tunable broadband photonic radio frequency (RF) phase shifter based on a silicon microring resonator. This scheme utilizes the thermal nonlinear effect of the silicon microring to change the electrical phase of the RF signal with a wide tuning range. A prototype of the phase shifter is experimentally demonstrated for a 40-GHz signal with a 0-4.6-rad tuning range.
Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Jian-Jun He,Dekun Liu

DOI: https://doi.org/10.1364/acpc.2012.as4h.1

IF: 3.8

2008-01-01

Optics Express

Abstract:A new semiconductor laser structure with digitally switchable wavelength is proposed. The device comprises two coupled c. avities with different optical path lengths, which form V-shaped branches with a reflective 2x2 half-wave optical coupler at the closed end. The reflective 2x2 coupler is designed to have a pi-phase difference between crosscoupling and self-coupling so as to produce synchronous power transfer functions. High single-mode selectivity is achieved by optimizing the coupling coefficient. The switchable wavelength range is greatly increased by using Vernier effect. Using deep-etched trenches as partial reflectors, additional waveguide branch structures are used outside the laser cavities to form a complete Mach-Zehnder interferometer, allowing space switching, variable attenuation, or high speed modulation to be realized simultaneously. Detailed design principle and numerical results are presented. (C) 2008 Optical Society of America.
SOA-based Fiber Ring Laser Use in a Photonic Radio-Frequency Phase Shifter

F. M. Wu,P. C. Peng,J. Chen,C. T. Lin,W. C. Kao

DOI: https://doi.org/10.1134/s1054660x11050276

IF: 1.2

2011-01-01

Laser Physics

Abstract:This investigation demonstrates the feasibility of a semiconductor optical amplifier (SOA)—based fiber ring laser use in a photonic radio-frequency (RF) phase shifter. Experimental results indicate that a fiber ring laser can successfully replace an external pump laser in a photonic RF phase shifter. The RF phase shifter can be turned by adjusting the power of the fiber ring laser.
Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Jialiang Jin,Lei Wang,Tingting Yu,Yin Wang,Jian-Jun He

DOI: https://doi.org/10.1364/OL.36.004230

IF: 3.6

2011-01-01

Optics Letters

Abstract:We report the first experimental demonstration of a single-electrode-controlled digitally wavelength switchable V-coupled-cavity laser with high side-mode-suppression-ratio (SMSR) in the 40 dB range. Sixteen-channel and twenty-six channel wavelength switchable lasers with 100 GHz spacing are demonstrated with the maximal SMSR of 40 dB and 37 dB, respectively. They do not require complex gratings, multiple epitaxial growths, or complex tuning algorithms. The device size is only 500 mu m x 300 mu m. Such a simple, compact, and high-performance laser has great potential as a low-cost alternative to existing complex tunable lasers for wide deployment in optical networks and beyond. (C) 2011 Optical Society of America
Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Jialiang Jin,Lei Wang,Jianjun He

DOI: https://doi.org/10.3788/col201210.102501

2012-01-01

Abstract:Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.
Study of Cascaded Tunable DFB Semiconductor Laser with Wide Tuning Range and High Single Mode Yield Based on Equivalent Phase Shift Technique

Lianyan Li,Song Tang,Jun Lu,Yuechun Shi,Baoli Cao,Xiangfei Chen

DOI: https://doi.org/10.1016/j.optcom.2015.04.077

IF: 2.4

2015-01-01

Optics Communications

Abstract:The tunable distributed feedback (DFB) semiconductor lasers with cascaded configuration were designed and fabricated using equivalent phase shift (EPS) technique. 32-wavelength division multiplexing (WDM) channels with 50-GHz and 100-GHz wavelength spacing were experimentally demonstrated. In such a tunable laser, single mode operation can be ensured by introducing EPS and the wavelength tuning can be realized by cascaded sections with specific sampling periods combining with chip heating. The proposed approach has some advantages such as good single mode property, low fabrication cost and feasibility of monolithic integration. The experimental results show that the tuning range can be nearly up to 25nm and the side mode suppression ratios (SMSRs) of most channels are above 40dB. The proposed laser should be promising for cost-effective applications in WDM systems.
A novel-configuration multi-wavelength Brillouin erbium fiber laser and its application in switchable high-frequency microwave generation

J. Fu,D. Chen,B. Sun,S. Gao

DOI: https://doi.org/10.1134/S1054660X10190047

IF: 1.2

2010-01-01

Laser Physics

Abstract:A novel configuration of compound-cavity multi-wavelength Brillouin erbium fiber laser is proposed and experimentally demonstrated. With an incident optical carrier power of 8 dBm, at least 14 lasing lines are obtained with a wavelength spacing of ∼0.08 nm. Stability and power uniformity of the multi-wave-length lasing are ensured by the flat hybrid gain of Brillouin and erbium, the compound-cavity structure, and the four-wave mixing suppression using a long (10 km) single-mode fiber. A stable and frequency-switchable microwave can be achieved by incorporating a fiber Bragg grating filter to select the desired n th-order Stokes wave and beating it with the optical carrier at a photodetector. In our experiment, the 1st-4th-order Stokes waves are filtered respectively and hence a high-quality microwave with a switchable frequency from ∼10 to ∼40 GHz and a tuning step of ∼10 GHz is achieved. The signal-to-noise ratio is measured to be >25 dB.
Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Dekun Liu,Min Lou,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2009.2036942

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:The static and dynamic characteristics of digital wavelength switching in a novel V-coupled-cavity semiconductor laser is investigated. In contrast to previously investigated Y-laser, the V-shaped coupler can realize not only an optimum coupling coefficient but also a ¿-phase difference between the cross-coupling and self-coupling coefficients, which results in a high single-mode selectivity. It is shown that while switching to an optimal current value results in the maximal output power and maximal side-mode suppression ratio (SMSR), the digitally wavelength switchable laser has a good tolerance on the accuracy of the switching current. For a current deviation corresponding to ±25% of the channel spacing, the SMSR only degrades by about 5.2 dB, while the wavelength varies by only ±0.01 nm from the set value for the case of 0.8 nm channel spacing. The dynamic properties including the switching transients and switching delay are also investigated and discussed.
Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Lin Wu,Sen Zhang,Xiaolu Liao,Li Zou

DOI: https://doi.org/10.1117/12.2085701

2015-01-01

Abstract:Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin box TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.
Novel Semiconductor Lasers and Integrated Photonic Devices

Jian-Jun He,Jialiang Jin,Dekun Liu,Lei Jin,Min Lou,Tingting Yu,Lei Wang

DOI: https://doi.org/10.1117/12.873899

2010-01-01

Abstract:Novel design concepts, simulations and experimental results on semiconductor lasers and integrated photonic devices are presented, for both telecom and biomedical applications. It is shown that the Vernier effect can be used to increase the tuning range of a digitally wavelength-switchable semiconductor laser, and to increase the sensitivity of passive and active waveguide sensors. The wavelength switchable laser based on V-coupled cavity has a large tolerance on the accuracy of the setting current. For the middle 50% of the current range corresponding to a wavelength channel, the wavelength varies by only ±0.01nm from the set value for 0.8nm channel spacing and the SMSR is maintained above 38dB. Wavelength switching over 8 consecutive channels is experimentally demonstrated using a single electrode control. The wavelength shift sensitivity of a waveguide sensor based on two cascaded microring resonators with Vernier effect can reach 1300nm/RIU, over an order of magnitude higher than a single ring sensor. A monolithic integrated intracavity biosensor based on V-coupled cavity laser is also proposed and analyzed. By simply detecting the power ratio of two output ports, a refractive index sensitivity in the order of 10-8 RIU can be achieved thanks to the intracavity sensing mechanism and the Vernier effect.
Electrically and Continuously Tunable Optical Delay Line Based on A Semiconductor Laser

Fang-Ming Wu,Peng-Chun Peng,Jason (Jyehong) Chen,Chun-Ting Lin,Gong-Ru Lin,Sien Chi

DOI: https://doi.org/10.1143/jjap.49.074102

IF: 1.5

2010-01-01

Japanese Journal of Applied Physics

Abstract:This investigation experimentally demonstrates the feasibility of the electrically and continuously tunable optical delay line using a semiconductor laser. The time delays for a 10 Gbps data signal are electrically delayed by adjusting the bias current of laser, and the maximum delay is approximately 41 ps. We also measure the bit error rate against the receiver power by various bias currents and wavelength detuning (Δλ). Measurements are made to verify the feasibility to use in optical communication systems.
50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

Lin Wu,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1364/cleo_si.2014.sth1g.1

2014-01-01

Abstract:We report our latest experimental results of the half-wave coupled rectangular ring-FP laser. Wavelength tuning of 50 channels covering L band at 100GHz spacing is achieved, with SMSR up to 41dB. Direct modulation at 2.5Gbps is also demonstrated.

Electrically Controlled Phase Shifter Using Semiconductor Laser in Optical Single Sideband System

40 GHz Phase Shifter Based on Semiconductor Laser

RF Phase Shifter Using a Distributed Feedback Laser in Microwave Transport Systems.

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Optically Tuneable Microwave-Photonic Phase Shifter Based on Silicon Microring Resonator

Planar Tunable High-Temperature Superconductor Microwave Broadband Phase Shifter with Patterned Ferroelectric Thin Film

1–2 GHz 2 mW injection-locked ring oscillator based phase shifter in 0.18 µm CMOS technology

A Tunable Broadband Photonic RF Phase Shifter Based on a Silicon Microring Resonator

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

SOA-based Fiber Ring Laser Use in a Photonic Radio-Frequency Phase Shifter

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Study of Cascaded Tunable DFB Semiconductor Laser with Wide Tuning Range and High Single Mode Yield Based on Equivalent Phase Shift Technique

A novel-configuration multi-wavelength Brillouin erbium fiber laser and its application in switchable high-frequency microwave generation

Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Novel Semiconductor Lasers and Integrated Photonic Devices

Electrically and Continuously Tunable Optical Delay Line Based on A Semiconductor Laser

50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser