1–2 GHz 2 Mw Injection-Locked Ring Oscillator Based Phase Shifter in 0.18 Μm CMOS Technology

Wen-Quan Sui
DOI: https://doi.org/10.1049/el.2016.2501
2016-01-01
Electronics Letters
Abstract:A new phase shifter based on injection-locked ring oscillator is proposed. By using a multi-stage phase generator with voltage-controlled injection locking technique, the proposed phase shifter is able to generate a flexible combination of coarse and fine-tuned phase delays over a wide range of operating frequencies while a small silicon area is maintained. Fabricated in a 0.18 µm RF CMOS process which only occupies 50 × 40 µm, a proposed three-stage phase shifter achieves flexible phase delays and a measured operating frequency up to 2 GHz with a maximum power consumption of 2 mW from a 1.8 V supply.
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