Abstract:Current collapse (drain current dispersion, gradual power saturation, or memory effect) encountered during microwave GaN HEMT power amplifier operation remains to be a major reliability and stability issue for the highly promising, emerging III-nitride, polar semiconductor based technology. Current collapse leads to bias condition induced memory effect, which is particularly detrimental to broad band RF amplifiers operating with large peak-to-average signal level. Loss of polarization induced, surface mobile holes, accompanied by the reduction of transistor channel electron density have recently been identified as the root cause of these undesirable, transient effects exhibited by the polar semiconductor based transistors, in which charge carriers are primarily originated from the built-in electric dipoles of the nitride material. A novel ohmic metal contact scheme, presenting low energy barrier for both the transistor channel electrons, and the surface mobile holes, is found to be effective in eliminating the undesirable, time and signal strength dependence behavior of the transistor performance characteristics. A GaN MISHEMT with such compound ohmic contacts is found to be capable of operating at higher saturation current density, compared to that of a GaN HEMT with traditional ohmic contacts. The new finding represents a major breakthrough in polar semiconductor device technology for microwave power amplification.

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

An insight to current collapse in GaN HEMT and suppressing techniques

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

The Current Collapse In Algan/Gan High-Electron Mobility Transistors Can Originate From The Energy Relaxation Of Channel Electrons?

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Current Collapse, Memory Effect Free GaN HEMT

In Situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

AlN/GaN HEMT with Gate Insulation and Current Collapse Suppression Using Thermal ALD ZrO2

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer